| 研究生: |
徐榮彰 Hsu, Rong-Chang |
|---|---|
| 論文名稱: |
以溶膠-凝膠法合成ZnO與IZO薄膜及其應用在UV波段光檢測器之研究 The study of sol-gel synthesized ZnO and IZO thin films and its applied in UV photodetectors |
| 指導教授: |
張守進
Chang, Shoou-Jinn |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程研究所 Institute of Electro-Optical Science and Engineering |
| 論文出版年: | 2009 |
| 畢業學年度: | 97 |
| 語文別: | 英文 |
| 論文頁數: | 86 |
| 中文關鍵詞: | 氧化鋅 、溶膠凝膠法 |
| 外文關鍵詞: | sol-gel, ZnO |
| 相關次數: | 點閱:54 下載:1 |
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本論文研究將分成三個部分來討論。第一部分是氧化鋅薄膜材料分析,主要以「溶膠-凝膠法」成功的在石英玻璃基板上成長氧化鋅透明薄膜。在氧化鋅薄膜的表現上,透過X-ray繞射儀了解其結晶性、SEM圖分析其表面結構,並進行霍爾量測測量氧化鋅薄膜的濃度、載子遷移率以及電阻率,同時去做光激發螢光量測及穿透率光譜儀的分析發現在UV波段有一氧化鋅的Near band emission(NBE)發光。另外在溶膠-凝膠法製成的氧化鋅膜實驗結果中發現有氧化鋅奈米線的成長,這是首次在無任何金屬觸媒的幫助下利用溶膠-凝膠法成功的成長氧化鋅奈米線。
第二部份則為以溶膠-凝膠法製作摻雜濃度為5at.%、7at.%、9at.%的IZO薄膜去探討材料分析,從實驗結果中看出掺銦之後的IZO薄膜在光特性、微結構特性及電特性上的確有明顯的改善,尤其是摻雜濃度為9at.%的IZO薄膜表現最佳。另外在IZO薄膜的表現上,透過X-ray繞射儀、SEM、霍爾量測、光激發螢光量測及穿透率光譜儀的分析以期薄膜能具有高透明、低電阻率的光學和電特性。
第三部分則是針對以溶膠凝膠法成長之氧化鋅奈米線薄膜為主的金半金光檢測器,主要目的是希望溶膠凝膠法製作的氧化鋅奈米線薄膜也能成功的製作出一製程簡單且成本低廉的光檢測器。此光檢測器使用指叉狀結構電極並用鎳/金當做電極材料,並使用HP-4155機台以及氙燈系統進行光、暗電流及光響應之量測。
This study introduced a simple approach for forming ZnO thin films. Here, the dissertation was divided into three parts, first and second part was the discussion of ZnO and IZO thin films, and third part was the discussion of ZnO based metal-semiconductor-metal (MSM) photodetectors. In first part, we successful deposited ZnO thin films on quartz substrate by using sol-gel method. The sol-gel synthesized ZnO films presented good crystalline and optical characteristics through the measurement of XRD, SEM, Hall and PL. Besides, in this study, the ZnO nanowires had been successfully prepared without metallic catalysis by sol-gel process.
Next part, IZO films was prepared by doping indium into ZnO and choice three different concentration for 5, 7, 9 at.% respectively. From material analysis, the optical, electrical and microstructural properties indeed were improved by doping indium. And the XRD, SEM, Hall, PL and UV-Vis spectrometer measurements showed that the IZO thin films present a good TCO thin film characteristics with high transparency and low resistivity.
Last part, the ZnO nanowires film based UV photodetectors was fabricated by using IDT (interdigital) MSM structure with Ni/Au as electrodes. The destination we discussed was that use sol-gel derived ZnO nanowires thin films to fabricate a simple and low-cost UV photodetectors, in order not only to understand the effect of different crystallizations, but also the contribution of the sol-gel derived ZnO basement. The photo/ dark current and responsivity were measured by HP-4155 and Xe-lamp system.
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