近年來，由於石墨烯(graphene)具有獨特且優越的電、機械、熱與光學性質而成為極受歡迎的材料之一，而且其極佳導電、快速電子移動率、低阻抗及可調變電導率，可被製作成許多光電元件，如太陽能電池、光接收器、調變器或波導等。本論文先以混合濺鍍機成長適合比例與厚度的鎳碳混合膜，再以超快雷射加工系統藉由多光子吸收(multiphoton absorption)，引發雷射聚焦點附近鎳碳混合膜的快速升溫與降溫方式來成長具有特殊微圖案之石墨烯薄膜。利用超快雷射瞬間在小區域內加熱的特性，主要是將催化金屬鎳瞬間加熱，同時碳原子可以輕易的溶入鎳薄膜中，由於超快雷射的加工方式是脈衝式加熱，因此加工區域在一連串脈衝結束後會很快的降回環境溫度，讓碳原子於冷卻的過程中析出並且自組裝為石墨烯。最後，利用氯化鐵蝕刻，只留下成長後的石墨烯圖案。比較此種方式與其他石墨烯成長法，因為雷射脈衝的均勻性使得成長的石墨烯品質較均勻，且不需要透過繁瑣的轉印過程，可將欲製作之石墨烯圖案以CAD軟體設計後，搭配超快雷射加工系統之雷射劑量控制模組直寫並成長於鎳碳混合膜基板上。初步推論在石墨烯成長過程下，石墨烯的成長品質與雷射加工方式(含調控脈衝時間與加工次數等)以及加工路徑有很大關聯，因此可藉由適當的加工路徑來達到任意圖案且具高品質的石墨烯微圖案之實現。最後藉由拉曼光譜量測加以驗證，在雷射加工描寫之路徑上所成長之石墨烯，擁有良好的均勻性。利用此方法，不但省去了昂貴的光罩製作費用與製程複雜度，可在未來將此技術應用於三維微電極、電漿子波導以及先進製程中的三維電路的描繪。

Recently, graphene has attracted enormous attention because of its unique and outstanding electrical, mechanical, thermal, and optical properties. Owing to its high electrical conductivity, significant electron mobility, low electrical impedance, and tunable electric conductivity which will be the candidates for electronic and optoelectronic devices, such as optical receiver, light modulator, and optical waveguides. A femtosecond laser induced localized thermal annealing while simultaneously decomposed carbon atoms diffused into the catalyst, an Ni thin film. Due to the pulse laser characteristics, the cooling rate to the room temperature will go back in a quick. During cooling process, the C atom segregated and self-assembling to few layer graphene. Then, the remaining Ni/C thin film was removing by a wet chemical etching process. Comparing to other methods, we control the duration of the laser pulse, laser dosage and processing path. By controlling laser parameters, we got better quality and quantity of graphene. Furthermore, we grown graphene on different kinds of substrates without tedious transfer process and for arbitrary patterns/devices by using the CAD to design patterns and combining our lab-made LabVIEW program with high-resolution laser focal volume. In the result, we knew that the quality of graphene has a great relation to laser parameters and the fabricating path direction. The laser direct writing method not only achieved a technic for fabricating a wide range of advanced graphene-based devices, such as 3D microelectrode, graphene waveguide and 3D circuits but also reduced the complicated process during the conventional CVD.

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