氧化石墨烯(Graphene oxide, GO)因其製程費用低廉、易於大量生產與容易進行化學修飾等優點使得GO具有巨大的潛力可製作為功能性的感測器與碳基電子元件。其中，GO圖案的製作便是其關鍵所在，唯有良好的圖案定義才能準確製作出電極或是活性區域，也才使得元件得以正常運作。回顧過去的GO圖案化方法大多侷限在微米尺度的圖案定義，若欲進一步製作更小尺度(如奈米級)的GO元件勢必將遭遇瓶頸；為此，開發一個快速、價廉的GO奈米級圖案化方法將是突破此一瓶頸的關鍵。
在本研究中，我們藉由奈米壓印微影術製作各種奈米尺度的GO複材結構，並探討所使用的GO複合漿料、壓印壓力等條件對製作結構的影響。結果顯示，使用松油醇作為漿料的溶劑再搭配奈米壓印微影術可快速且方便地製作奈米級的GO圖案，並可獲得良好且完整的結構形貌。其中，圖案的長與寬可藉由母模的設計來定義，而結構的高度則可使用漿料的濃度來進行調控，顯示本製程方法具有三維的奈米級圖案定義能力。最後，本製程也成功製作出直徑最小為300 nm的點陣列圖案；另一方面，我們將GO材料修飾於奈米金陣列上以製作SERS基板，並使用羅丹明6G(Rhodamine 6G, R6G)來鑑別不同基板其SERS效果。結果顯示，修飾GO的奈米金基板，相較於未修飾的基板有更佳的SERS表現，其原因為GO顯示了較佳的CM機制增強，並成功藉由GO的修飾獲得三倍的拉曼增益。

Graphene is a single layer of two-dimensional nanoscale carbon structure. It has many unique properties like excellent physics and electrical ability makes it have the potential to applicate in electronics and sensors. Among them, the lithography is the key to patterning the working area and makes it work properly. Graphene oxide (GO) can be made easily and abundantly by the Hummer’s method. In our research, we use the nanoimprint process to fabricate GO nanopattern. Here, we alter the pressure and the ink concentration to discuss the heights of structure and its morphology. Finally, we demonstrate the ability to fabricate 300 nm dots array with uniform morphology by the nanoimprint lithography.

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