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研究生： 卓懷平
Cho, Huai-Ping
論文名稱： 利用電位誘導吸附法製備硒化鎘量子點敏化太陽能電池
Fabrication of CdSe Quantum Dot Sensitized Solar Cells with Photoelectrodes Prepared Using Potential-Induced Adsorption
指導教授： 李玉郎
Lee, Yuh-Lang
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2015
畢業學年度： 103
語文別： 英文
論文頁數： 61
中文關鍵詞： 電位誘導吸附法 、量子點敏化太陽能電池 、硒化鎘
外文關鍵詞： potential-induced adsorption, quantum dot-sensitized solar cell, cadmium selenide
相關次數： 點閱：118  下載：1 
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    • 連續離子層吸附與反應(Successive ionic layer adsorption and reaction, SILAR)為一廣泛使用在製備量子點敏化太陽能電池之方法，然而孔洞阻塞與不均勻的量子點分佈仍是待改善的問題。本研究利用電位誘導吸附法(Potential-induced adsorption, PA)將硒化鎘量子點沉積於二氧化鈦光電極上，以製備量子點敏化太陽能電池。藉由施加偏壓於光電極上，促進反應前驅物之滲透力，使鎘離子吸附於多孔性的二氧化鈦薄膜中，以增進後續所沉積之量子點。實驗中利用能量散佈分析儀來分析經PA程序之光電極的元素組成，並量測整體量子點敏化太陽能電池之效率。研究結果顯示，有施加偏壓所製備的光電極之鎘含量確實比未施加偏壓所製備的光電極高；而二氧化鈦薄膜中加入散射層，有助於提升硒化鎘量子點敏化太陽能電池之效率；在比較4 μm main layer + 4 μm散射層(4+4 μm)與 8+4 μm之二氧化鈦薄膜後，發現8+4 μm之二氧化鈦薄膜具有較大的容量來乘載量子點，雖然4+4 μm之二氧化鈦薄膜在少量硒化鎘量子點下組成之電池表現得較好；而以PA應用於硫化鎘/硒化鎘量子點共敏化太陽能電池的製備，電池之效率可達到4.82%。

    Successive ionic layer adsorption and reaction (SILAR) technique has been commonly adopted to fabricate quantum-dot-sensitized solar cells (QDSSCs). However, pore blocking and poor distribution of quantum dots (QDs) in TiO2 matrices are still problems need to be solved. A potential-induced adsorption (PA) of photoelectrodes was introduced to improve the deposition of cadmium selenide (CdSe) QDs and the performance of QDSSCs. The QDs deposited photoelectrode was characterized by energy dispersive spectrometer (EDS) in scanning electron microscope (SEM). The experimental results show that the PA greatly enhanced the ion adsorption, resulting in a higher amount of cadmium ions on the film surface for the following reaction with selenide precursors. In addition, TiO2 scattering layer was used to increase the light-trapping capabilities. A comparison of photoelectrodes with 4+4 μm TiO2 films and 8+4 μm TiO2 films was carried out to inspect the effects of the layers. The results show that both the efficiencies of the cell with the two different photoelectrodes increase with increasing SILAR cycles of CdSe. However, 8+4 μm TiO2 photoelectrodes have larger capacity to load more QDs while 4+4 μm TiO2 films performed better than those with 8+4 μm TiO2 films under small amount of CdSe QDs. A maximum efficiency of 4.82% was achieved by using PA improved co-sensitization of CdS/CdSe on 8+4 μm TiO2 photoelectrode.

    Contents 摘要 I Abstract II Acknowledgement III Contents IV List of Figures VI List of Tables VIII Chapter I. Introduction 1 1.1 Background 1 1.2 Motivation 2 Chapter II. Principles and Literature Review 3 2.1 DSSCs 3 2.1.1 Working principle 3 2.1.2 Conductive substrate 4 2.1.3 Semiconductor 4 2.1.4 Sensitizers 5 2.1.5 Electrolyte 6 2.1.6 Counter electrode 8 2.2 QDSSC 9 2.2.1 Semiconductor materials and QD 11 2.2.2 Electron charge transfer and transport processes 16 2.2.3 Electrolyte 18 2.2.4 Counter electrode 20 2.3 Synthesis of QDs 21 2.3.1 Chemical bath deposition (CBD) 21 2.3.2 Molecular assisted deposition 21 2.3.3 Electrophoretic deposition (EPD) 23 2.3.4 SILAR 23 2.4 Improvement in QDSSCs 24 Chapter III. Materials and Methods 29 3.1 Materials and chemicals 29 3.2 Instruments 29 3.2.1 Energy-dispersive X-ray spectroscopy (EDS) on the scanning electron microscope (SEM) 29 3.2.2 Solar simulator 30 3.3 Experiment procedure 34 Chapter IV. Results and Discussion 37 4.1 Comparative studies on the performance of CdSe QDSSCs prepared using Cd(NO3)2 and Cd(Ac)2 precursors 37 4.2 Performance of CdSe QDSSCs with PA improved photoelectrodes 40 4.3 Optimum TiO2 film thicknesses and layers for CdSe QD photoelectrodes 44 4.4 The performance of PA improved CdS/CdSe co-sensitized QDSSCs 49 4.4.1 Effects of CdS layers 49 4.4.2 Effects of CdSe layers 50 Chapter V. Conclusion 52 References 53

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