本論文分為兩部份，第一部份為利用一個簡便且有效率的電化學沉積方式在無模板下製備銅鋅奈米線。以電沉積方式於玻璃碳電極及鎢電極上探討氯化亞銅於40-60mol%ZnCl2-EMIC離子液體中的電化學行為。定電位電鍍所得的銅鋅合金鍍層根據沉積電位及氯化亞銅濃度的不同而產生各種不同的形貌，如中空的六角錐、奈米線、多孔的奈米線及網狀結構。電沉積的銅鋅合金樣品分別以掃描式電子顯微鏡(SEM)、能量分散光譜儀(EDS)、X射線繞射儀(XRD)、穿透式電子顯微鏡(TEM)進行結構特徵分析。利用所得的銅鋅合金奈米線與網狀結構在弱鹼性溶液中進行硝酸根離子的電催化實驗，發現有良好的效果。
第二部份以電化學及電沉積的方式於白金電極、鎳電極及玻璃碳電極上探討鉛、碲及碲化鉛在EMI-BF4室溫離子液體中的電化學行為。藉由鉛在碲上產生低電位沉積(underpotential deposition,UPD)現象電沉積碲化鉛薄膜，此UPD現象的電荷轉移速率較緩慢。將沉積於鎳基材上的碲化鉛薄膜藉由能量分散光譜儀(EDS)、掃描式電子顯微鏡(SEM)、X射線繞射儀(XRD)分析結構的特徵。PbTe的能隙經由計算的結果約0.25eV。

In this study, we used a facile and efficient synthesis route for prepartation of Cu-Zn nanowires via electrochemical deposition without any templates. The electrodeposition of Cu-Zn alloys was investigated on glassy carbon and tungsten electrodes in 40-60mol% ZnCl2-EMIC ionic liquid containing copper(I). Depending on the deposition potential and Cu(I) concentration, potentiostatic electrolysis produced Cu-Zn alloy deposits with various unusual morphologies such as hollow hexagonal pyramids, nanowires, nanoporous wires, and network structures. The electrodeposited Cu-Zn alloys were characterized by scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), and scanning electron microscope (TEM). The morphologies of Cu-Zn alloy deposits with porous nanowires and network structures exhibited the highest electrocatalytic activity of NO3- reduction in a weakly alkaline solution.
The electrochemical behaviors of Pb, Te, and PbTe were studied in the room temperature ionic liquid 1-ethyl-3-methylimidazolium tetrafluoroborate on platinum, nickel, and glassy carbon electrodes. PbTe flims could be obtained by the underpotential deposition (UPD) of Pb on the deposited Te. The UPD of Pb on Te was, however, limited by a slow charge transfer rate. Samples of PbTe flims were prepared on nickel substrate and characterized by energy-dispersive spectroscope (EDS), scanning electron microscope (SEM), and X-ray diffraction (XRD). The band gap energy of the PbTe deposit was calculated about 0.25 eV.

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