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研究生: 方家為
Fang, Jia-Wei
論文名稱: 銀奈米線表面遷移形成銀奈米網之研究
A study of fabricating silver nano-net via surface migration
指導教授: 彭洞清
Perng, Dung-Ching
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年: 2014
畢業學年度: 102
語文別: 中文
論文頁數: 76
中文關鍵詞: 銀奈米線銀奈米網透明導電膜
外文關鍵詞: Ag nanowire, Ag nano-net, transparent conductive film
相關次數: 點閱:108下載:2
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  • 本論文主要研究加熱銀奈米線所產生的變化,並應用加熱後銀奈米線表面會產生遷移導致形變的結果,使相互交疊的銀奈米線形成銀奈米網,再將銀奈米網應用在製備透明導電膜上。本實驗主要可分為兩大部份,第一大部份又可細分為兩小部份,分別是使用兩種不同的加熱方式,使均勻分布在基板上的銀奈米線能夠產生連結形成銀奈米網,以及探討加熱銀奈米線後銀奈米線產生的變化。第二大部份則是將銀奈米網應用在透明導電膜上。
    由第一大部份的實驗結果可知銀奈米線在加熱(給予能量)後,銀奈米線的表面會產生遷移,並朝向低能量的晶面(111)排列,以及銀奈米線和基板之間的附著力(adhesion)會極大的影響銀奈米線表面產生遷移的情況。在表面遷移的過程中銀奈米線會產生形變,使得互相交疊的銀奈米線聯結成銀奈米網,並整理出在不同銀奈米線分布的密度時適合何種加熱方式和加熱溫度及持溫時間形成銀奈米網。
    第二大部份的實驗則是把不同密度分布的銀奈米線/網由AZO所夾住形成類似三明治結構,並量測其電阻率和穿透率,得到在同密度的銀奈米線分布下,不管夾層是銀奈米線或是銀奈米網皆不會影響其穿透率,然而銀奈米網的電阻率會在更低,以及製備出穿透率為80%時電阻率為9.513×10-3Ω-cm的透明導電膜。

    In this thesis, the surface migration of silver nanowires (NWs) was observed and the annealing temperature and dwell time required for NW fusion are investigated. Rapid thermal annealing (RTA) system and high-temperature quartz tube furnace were used this study. When the Ag NWs are treated at elevated temperatures, the Ag atoms at the NWs will migrate and leads to deformation, the overlapped NWs could fused together and forms Ag nano–net. Resistivity and transparency of the Ag nano-net embedded transparent conductive films are studied.
    This experiment can be divided into two parts. In the first part, two different annealing systems were used to anneal uniformly distributed Ag NWs to form Ag nano-net by linking or fusing the NWs together. Surface migration of Ag NWs after the annealing is also explored. In the second part, I sputtered transparent conductive films with or without Ag nano-net embedded to study thier resistivity and transparency.
    The results show that Ag atoms will migrate toward low energy surface (111) during the annealing. The adhesion between Ag NWs and the substrate can greatly affect Ag’s surface migration. The surface migration of Ag NWs will distort the shape of the NWs, the overlapped area of the NWs fused together and forms Ag nano-net. This study investigates heating system, temperature and dwell time that suitable to from Ag nano-net as a function of NW density.(RTA,500℃,3min for rarefaction and high-temperature quartz tube furnace,250℃,10min for dense)
    The resistivity and transmittance results of Ag nano-net embedded AZO films show that NWs fuse together or not does not affects their transmittance, however, the resistivity of the AZO film with fused Ag nano-net embedded has much lower resistivity than those without. Finally, transmittance of 80% with resistance of 9.513 × 10-3Ω-cm AZO film has been fabricated in our lab.

    中文摘要 Ⅰ Abstract Ⅱ 誌謝 Ⅷ 目錄 Ⅸ 表目錄 XII 圖目錄 XIII 第一章緒論 1 1.1前言 1 1.2透明導電膜(TCO)簡介 1 1.2.1氧化銦錫(ITO)薄膜 2 1.2.1.1磁控濺鍍法(Magnetron Sputter) 3 1.2.1.2真空蒸鍍法(Evaporation) 4 1.2.1.3化學氣象沉積法(Chemical Vapor Deposition, CVD)4 1.2.1.4溶膠-凝膠法(sol-gel process) 4 1.2.2 AZO(Al doped ZnO)透明導電膜 5 1.2.3金屬奈米網 7 1.2.4石墨烯 7 1.3動機 7 第二章理論基礎與文獻回顧 9 2.1銀奈米線的合成 9 2.1.1直接模板法 9 2.1.1.1多孔洞材料(陽極氧化鋁模板, AAO) 10 2.1.1.2 DNA生物分子鏈(DNA chain) 11 2.1.2利用界面活性劑控制晶面成長的自組裝法 12 2.1.2.1晶種輔助成長法 13 2.1.2.2多元醇法 13 2.2奈米銀的晶面能量 15 2.3銀奈米線的聯結 16 第三章實驗方法與步驟 17 3.1實驗材料 17 3.2實驗儀器介紹 18 3.2.1真空濺鍍系統 18 3.2.2快速熱退火(RTA) 19 3.2.3高溫石英爐管 21 3.2.4注射幫浦 23 3.2.5離心機 24 3.2.6塗佈機 25 3.3分析儀器介紹 26 3.3.1掃描式電子顯微鏡(SEM) 26 3.3.2 X光繞射儀(XRD) 28 3.3.3四點探針/多功能電源電表 30 3.3.4紫外光/可見光光譜儀(UV-VIS-NIR Spectrophotometer) 31 3.4實驗流程 32 3.4.1基板之清洗 34 3.4.2銀奈米線的製備 35 3.4.2.1多元醇法製備銀奈米線 35 3.4.2.2多元醇法結合晶種促進成長法製備銀奈米線 38 3.4.3離心機分離銀奈米線和銀奈米顆粒 38 3.4.4濺鍍AZO透明導電膜 38 3.4.5旋轉塗佈銀奈米線和預先烘烤 39 3.4.6快速熱退火(RTA) 39 3.4.7高溫石英爐管 39 第四章結果與討論 40 4.1銀奈米網的製備條件 40 4.1.1銀奈米線的分布的密度 40 4.1.2使用快速熱退火(RTA)製備銀奈米網 41 4.1.3使用高溫石英爐管加熱製備銀奈米網 47 4.1.4製備銀奈米網的結果與討論 51 4.2加熱銀奈米線產生表面遷移之探討 54 4.2.1加熱在PEOX上的銀奈米線 54 4.2.2加熱在Si基板上的銀奈米線 57 4.2.3銀奈米線表面遷移的結果與討論 60 4.3製備含有銀奈米網的透明導電膜(三明治結構)及量測與分析 60 4.3.1透明導電模的製備 60 4.3.2電阻率和穿透率的量測與分析 64 第五章結論 71 參考文獻 72

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