本研究中，吾人首度以通電結晶製程(Electrical Induced Crystallization Mechanism, EIC)將金屬原子摻雜到奈米結構當中，藉由低溫的通電固態摻雜製程，可製作出雙層奈米線結構，並將其應用於低溫奈米光電元件當中，此技術可廣泛應用於低溫奈米元件中。
近年來氧化鋅奈米結構，具有高表面積、量子侷限效應及高結晶品質等良好性質與應用潛力，例如：氣體感測器，太陽能電池和光電元件。本研究主要探討以通電結晶固態摻雜製程將金屬（鋁；銀）原子摻雜至氧化鋅奈米結構。
本實驗使用磁控濺鍍法於矽基板上沉積 ZnO-Al 及 ZnO-Ag 雙層膜後，透過低溫水溶液法成長氧化鋅奈米線，完成雙層膜與奈米線之複合結構。經由通電結晶製程(EIC)對試片結構中的金屬膜作為導電通道，透過對導電層施加直流電所誘發的焦耳熱(約攝氏200度)，可大幅提升薄膜與奈米結構結晶度。
通電結晶製程不僅能誘發金屬原子進行界面擴散，更可以進一步的摻雜金屬至氧化鋅奈米線中。藉由調控通電的電壓電流，可調整金屬原子摻雜至奈米線中的深度與比例，形成雙層奈米線(ZnO/metal-ZnO)。本研究在固態摻雜製程溫度約在攝氏200度，因此通電結晶製程可應用於低溫奈米結構元件製作。

In this study, We’re using low-temperature solid-state doping process to metal- doped nanostructure by Electrical Induced Crystallization Mechanism (EIC), and applied it to low temperature nano electro-optic devices.
ZnO nanostructured material having many unique properties(large surface area, good crystal quality and increased quantum confinement effect) with potential applications, such as in gas sensors , DSSCs, and Opto- devices. This study focuses on the properties of Metal(Al; Ag)- doped ZnO nanostructure prepared by electric current induced crystallization(EIC) process.
Both ZnO nanowire and metal film(Al; Ag) had combined on SiO2 as the wires/ films structure, and the metal film was a conductive channel to perform the electrical induced crystallization (EIC). Under an electrical current, direct current (DC) raised the temperature(~200 degrees Celsius) of film and improved the crystallization of nanostructure.
The effects of EIC not only induced metal atomic interface diffused mechanism, but also doped metal on the roots of ZnO nanowires to form double layers wire(ZnO/metal- ZnO). The metal doped concentration and distance of ZnO nanowire had increased with decreasing the electrical duration. Also, the electrical current induced temperature was ~200 degrees Celsius(solid-state doping process) and so could be applied to low temperature nanostructures device.

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