一般普遍用於奈米壓印模具的材料，主要以矽(Silicon)、軟硬性高分子(如二甲基矽氧烷、聚亞醯胺)。由於在壓印時模具必須具備一定的重複性，因此要具備足夠的硬度、壓縮強度與伸張強度，才足以應付多次的重複性壓印。當採用熱壓成型法(hot embossing)，在模具材料的物理性質上，要有高熱傳導係數致使熱擴散均勻與低熱膨脹係數以降低變形量，這些都是確保模具使用壽命延長的因素。
因為類鑽碳及鑽石皆具有高硬度、高壓縮強度、低熱膨脹係數、高熱傳導係數的優點，所以將之應用於製作模具的模具的材料與提供模具的保護是十分適合的。類鑽碳除了有上述優異的性質外，本實驗在沉積類鑽碳膜時加入六甲基矽氧烷當作碳源，導致類鑽碳膜表面具有許多甲基分子而造成低表面能，呈現抗沾黏的性質。以化學氣相法成長之鑽石膜，因為鑽石本身的微結構與惰性表面的特性，所以也造成表面具備抗沾黏的性質。因此本實驗直接於類鑽碳膜及鑽石薄膜上利用壓印的方式將微/奈米圖案轉移至高分子阻劑層上，並以氧電漿移除殘餘層之後，利用lift-off方式製作金屬遮罩(metal mask)，再進一步以乾蝕刻的方式將圖案轉移至鑽石薄膜與類鑽碳薄膜上，然後以此作為壓印模具進行壓印動作；在本文中探討不同壓印與蝕刻參數對於模具製作的影響，並由壓印結果顯示不管是以鑽石薄膜或是類鑽碳薄膜作為壓印模具，皆可以將微米級及奈米級的圖案轉移至所使用的阻劑上，由此可證明出類鑽碳膜與鑽石薄膜在壓印時，皆具有不錯的抗沾黏效果，可省略模具脫模層處理的步驟。
另外開發以逆式壓印轉印無殘餘層之PEDOT/PSS之圖案，希望可藉由此方式定義有機薄膜電晶體(OTFT)之電極或可撓曲基板之線路。此方法的關鍵在於製做出凹槽與凸面不同表面能之模具，當以旋轉塗佈PEDOT/PSS水溶液後，使之僅選擇性填入的模具凹槽，然後將以表面具有黏著劑之塑膠基板即可將PEDOT/PSS圖案轉出來，並且不會影響其電性的表現，而經過SEM觀察可證明所轉移出圖案為沒有殘餘層之PEDOT/PSS之微米級圖案。

Generally, the most reported material in imprinting mold is silicon or polymer, such as PDMS and polyimide. For nanoimprinting process, owing to the high loading force and high temperature, above the high glass temperature of polymer resist, mold material must possesses high compressibility, hardness ,and extensibility. Furthermore, the mold requires high thermal conductivity to be able to transfer heat uniformly and low expansion coefficient to reduce thermal deformation.
For the cause of diamond-like carbon and diamond film intrinsically have these properties mentioned above, we could utilize them as suitable material for imprinting process. In our experiment, DLC film was deposited with additional HMDSO which provides surface with methyl group to show hydrophobic characteristics. The method of nanodiamond film growth with hot-filament chemical vapor deposition (HFCVD) could result in smoother surface and smaller grain size than usual one. The patterns with micro/nano features fabricated onto DLC and nanodiamond film via traditional nanoimprinting lithography is so-called DLC mold and diamond mold, respectively. We could emboss DLC mold and diamond mold in polymer resist and transfer negative pattern onto Si or flexible substrate completely. As SEM images and surface profile indicated, DLC and diamond mold are suitable to be a mold due to their innate anti-adhesive surface, thus, they need not any additional treatment with anti-stick layer. On the other hand, because DLC film and diamond film could maintain theirs anti-adhesive quality even over 300℃, it is obviously that this methodology is quite better than self-assembly process with OTS chemical-bonding treatment. Thus, DLC and diamond mold are expected to apply in imprinting or molding process over 250℃.
In other relevant subject, we adopt reversal imprinting process to transfer the pattern of conductive polymer (PEDOT/PSS) without the residual layer. The very key to this process is the treatment of the mold. The Si-mold shows two characteristics, hydrophobic in protruding surface and hydrophilic in concave surface. After spin-coating process, the concavity could selectively fill up with PEDOT/PSS solution. Finally, the pattern of PEDOT/PSS is completely transferred to glue-surface and flexible polymer substrate by conformal contact without any residual layer. From the I-V measurement, the electric characteristic of transferred pattern through reversal imprinting process is the same as PEDOT/PSS thin film with spin-coated process. The formation of conductive polymer pattern is easy and simple to define source and drain electrodes in the next step and result into organic thin-film transistor (OTFT) devices. For the benefits above, it is quite helpful to fabricate organic thin- film transistor device.

[1] S. Y. Chou, P. R. Krauss, P. J. Restrom, Appl. Phys.
Lett. 67﹐3114 , 1995.
[2] S.Y. Chou, P.R. Krauss, P. J. Restrom, J. Vac. Sci.
Technol. B 14﹐4129 , 1996.
[3] S. Y. Chou, P.R. Krauss, P. J. Restrom, Sciences. 272﹐
85 , 1995.
[4] S. Zankovych, T. Hoffmanm, J. Seekamp, J. U. Bruch and
C. M. Sotomayor Torres, Nanotechnology, 12﹐91 , 2001.
5] A. Kumar and G. M. Whitesides, Appl. Phys. Lett., 63 ﹐
2002,1993.
[6] Y. Xia, E. Kim, X. M. Zhao, J. A. Rogers, M. Prentiss
and G. M. Whitesides, Sciences, 273 , 3471 , 1996.
[7] T. Bailey, B. J. Choi, M. Colburn, M. Meissl, S.
Shaya, J. G. Ekerdt, S. V. Sreenivasan, C. G. Willson,
J. Vac. Sci. Technol. B 18 , 3572 , 2000.
[8] Colburn. Matthew, Grot. Annette, Amistoso. Marie,
Choi. Byung Jin, Bailey. Todd, Ekerdt. John, S. V.
Sreenivasan, Hollenhorst. James, C. G. Willson,
Proceedings of SPIE - The International Society for
Optical Engineering, v 3997, 453 , 2000.
[9] S. Johnson, D. J. Resnick, D. Mancini, K. Nordquist,
W. J. Dauksher, K. Gehoski, J. H. Baker, L. Dues, A.
Hooper, T. C. Bailey, J. G. Ekerdt, C. G. Willson,
Microelect. Eng. 67–68, 221, 2003.
[10] X. M. Zhao, Y. Xia and G. M. Whitesides, J. Mater.
Chem., 7, 1069, 1997.
[11] Y. Xia and G. M. Whitesides, Annu. Rev. Mater. Sci.
28, 153, 1998.
[12] K. Y. Suh, Y. S. Kim and H. H. Lee, Adv. Mater., 13,
1386, 2003.
[13] Kahp Y. Suh, Hong H. Lee, Adv. Mater., 16 ,176,2004
[14] E. L. Hu, Proceedings-The Electrochemical Society, 80-
6 , 200,1980.
[15] J. McElvain, J. Appl. Phys ., 80, 6002, 1996
[16] Haisma, J. Verheijen, M. Heuvel, K. Berg, J. J.
Vac .Sci. Technol. B 14 , 4124,1996
[17] C. G. Willson, M. E. Colburn, United States Patent,
6, 334, 960, 2002.
[18] P. Ruchhoefft, M. Colburn, B. Choi, H. Nounu, S.
Johnson, T. Bailey, S. Damle, M. Stewart, J. Ekerdt,
J. C. Wolfe, C. G. Willson, J. Vac .Sci. Technol. B,
17, 2965, 1996.
[19] M. Colburn, A. Grot, B. J. Choi, M. Amistoso, T.
Bailey, S. V. Sreenivasan, J. G. Ekerdt, C. G.
Willson, J. Vac .Sci. Technol. B, 19 2162, 2001.
[20] S. C. Johnson, T. C. Bailey, M. D. Dickey, B. J.
Smith, E. K. Kim, A. T. Jamieson, N. A. Stacey, J. G.
Ekerdt, C. G. Willson, SPIE Microlithography
Conference, 2003
[21] I. McMackin, P. Schumaker, D. Babbs, J. Choi, W.
Collison, S. V. Sreenivasan, N. Schumaker, M. Watts,
R. Voisin, SPIE Microlithography Conference, 2003
[22] A. Carvalho, M. Geissler, H. Schmid, B. Michel, E.
Delamarche, Langmuir, 18 , 2406 , 2002.
[23] J. C. Love, D. B. Wolfe, M. L. Chabinyc, K. E. Paul,
G. M. Whitesides, J. Am. Chem. Soc. 124 ,1576, 2002.
[24] Y. N. Xia, J. Tien, D. Qin, G. M. Whitesides,
Langmuir, 12 ﹐4033﹐1996.
[25] Y. N. Xia, M. Mrksich, E. Kim, G. M. Whitesides, J.
Am. Chem. Soc., 117 ﹐9576﹐1995.
[26] A. Kumar, H. A. Biebuyck, G. M. Whitesides, Langmuir,
10 ﹐1498﹐1994.
[27] A. Carvalho, M. Geissler, H. Schmid, B. Michel, E.
Delamarche, Langmuir, 18 , 2406, 2002.
[28] J. C. Love, D. B. Wolfe, M. L. Chabinyc, K. E. Paul,
G. M. Whitesides, J. Am. Chem. Soc. 124 ﹐1576﹐2002.
[29] K. I. Nakamatsu, N. Yamada, K. Kanda,Y. Haruyama and
S. Matsui , Jpn. J. Appl. Phys.,45, 954-956, 2006.
[30] J. H. Jeong, K. D. Kim, Y. S. Sim, D. G. Choi, E. S.
Lee, S. H. Park, T. W. Lim, and D. Y. Yang , Proc. of
SPIE ., 6151, 61512J-1, 2006.
[31] J. Taniguchi, Y. Tokano, I. Miyamoto, M. Komuro, H.
Hiroshima,Nanotechnology , 13, 592–596, 2002.
[32] K. A. Lister, S. Thoms, D. S. Macintyre, C. D. W.
Wilkinson, and J. M. R. Weaver, J. Vac. Sci. Technol.
B, 22, 6, 2004.
[33] http://nano.nchc.org.tw/dictionary/ebl.html
[34] G. Y. Jung, Z. Y. Li, W. Wu, Y. Chen, D. L. Olynick ,
S. Y. Wang ,W. M. Tong and R. S. Williams, Langmuir ,
21, 1158-1161, 2005.
[35] 余樹楨，晶體之結構與性質，第12章，渤海堂文化公司，台北
台灣，1993.
[36] C. D. Martino, F. Demichelis and A. Tagliaferro,
Diamond Relat. Mater., 4, 1210, 1995 .
[37] J. C. Angus and C. C. Hayman, Science, 241, 913, 1998.
[38] I. Garnev and V. Orlinov, Diamond Relat. Mater., 4,
1041, 1995﹒
[39] J. J. Cuomo, D. L. Pappas, J. Bruley, J. P. Doyle and
K. L. Saenger,J. Appl. Phys., 70 [3], ( 1991 ), 1706.
[40] J. J. Cuomo, D. L. Pappas, J. Bruley, J. P. Doyle and
K. L. Saenger, J. Appl. Phys., 70 [3], ( 1991 ), 1706.
[41] P. C. Kelires, C. H. Lee and W. R. Lambrecht, J. Non-
Cryst. Solids, 164/166,1131 ,1993.
[42] V. F. Dorfman, Thin Solid Films, 212, (1992 ), 267.
[43] B. Dorfman, M. Abraizov, Fred H. Pollak, D. Yan, M.
Strongin, X. Q. Yang and Z. Y. Rong, Mat. Res. Soc.
Symp. Proc. 349, 547,1994.
[44] V. F. Dorfman, A. Bozhko, B. N. Pypkin, R. T. Borra,
A. R. Srivatsa, H. Zhang, T. A. Skotheim, J. Khan, D.
Rodichev, and G. Kirpilenko, Thin Solid Films, 212,
274,1992 .
[45] B. Dorfman, M. Abraizov, M. Strongin, X. Q. Yang,
D. Yan, Fred H. Pollak, J. Grow and R. Levy, Mat. Res.
Soc. Symp. Proc. 351, 43,1994.
[46] V. V. Voevodin, J. S. Zabinski, Diamond Relat.Mater.

, 7, 463,1998.
[47] V. V. Voevodin, S. V. Peasas and J. S. Zabinski,
J. Appl. Phys. 82 [4], , 855, 1997.
[48] V. V. Voevodin, M. A. Capano, A. J. Safriet, M. S.
Donley and J. S. Zabinski, Appl.Phys. Lett. 69 [4],
188,1996.
[49] V. V. Voevodin, J. P. O’Neill, J. S. Zabinski, Surf.
Coat. Technol. ,36,116-119, 1999.
[50] G. A. J. Amaratunga, M. Chhowalla, C. J. Kiely, I.
Alexandrou, R. Aharonov and R. M. Devenish, Nature,
383, 321, 1996 .
[51] M. P. Siegal, P. N. Provencio, D. R. Tallant, and R.
L. Simpson, B. Kleinsorge and W. I. Milne, Appl. Phys.
Lett. 76 [15], 2047, 2000.
[52] T. A. Friedmann, J. P. Sullivan, J. A. Knapp, D. R.
Tallant, and D. M. Follstaedt, D. L. Medlin and P. B.
Mirkarimi, Appl. Phys. Lett. 71 [26], 3820, 1997.
[53] M. P. Siegal, J. C. Barbour, P. N. Provencio, D. R.
Tallant and T. A. Friedmann, Appl. Phys. Lett. 73 [6],
759, 1998.
[54] L. J. Martinez-Miranda, M. P. Siegal and P. P.
Provencio, Appl. Phys. Lett. , 79 [4], 542, 2001.
[55] 蔡瑛修, 國立成功大學化學工程系研究所碩士論文, 2000.
[56] 莊達人，VLSI製造技術，高立圖書有限公司，1998修訂
[57] D. M. Mattox, J. Vac. Sci. Technol. A, 7 [3], 1105.
[58]田明波與劉德令編譯，薄膜科學與技術手冊(機械工業出版社，
北京，1991年，第1頁。
[59] J. Carlsson, Thin Solid Films 130, 261 ,1985.
[60] K.F. Jensen and W. Kern, Thin Film Processes II,
edited by J. L. Vossen and W. Kern ,Academic Press,
283,1991.
[61] R. Kern, G.L. Lay, and J.J. Metois, Current Topics in
Material Science 3, 135,1979.
[62] M. Frenklach(1991), in Diamond and Diamond-like Films
and Coating, edited by R. E. Clausing, L.L. Horton,
J.C. Angus, and P. Koidl, NATO ASI Series B: physics,
Vol. 266. Plenum, New York, p. 499-524.
[63] P. A. Dennig, H. Shiomi, and D.A. Stevenson, Thin
Solid Films 212, 63 , 1992.
[64] P. E. Pehresson , F. G. Celii, and J. E. Butler,
Diamond Films and Coatings, edited by R. F. Davis (Noyes, 1993) p.69.
[65] J.R. Roth, Industrial Plasma engineering Volume 1:
Principles (IOP Publishing, Bristol, 1995), chapter 10.
[66]洪昭南，電漿反應器，化工技術，第三卷，第三期，124，
1995.
[67] B. Chapaman, Glow Discharge Processes-Sputtering and
Plasma Etching, John Wiley & Sons, Canada, 1980.
[68] F. A. Khan , I. Adesida , Appl. Phys. Lett. , 75,
15 , 1999.
[69] Yutaka Andoa, Yoshiki Nishibayashia, Koji Kobashia,
Takashi Hiraob, Kenjiro Ourab, Diamond and Related
Materials , 11, 824, 2002.
[70] H. Shirakawa, E. J. Lewis, A. G. MacDiarmid, C. K.
Chiang, A. J.Heeger, J. Chem. Soc., Chem. Commun.,
578 , 1977.
[71]A. W. Adamson, Physical Chemistry of Surfaces, p.26-
32, Sixth Edition, 1997.
[72] 鄭總輝、陳振鑾、陳致源、鄭欽峰，工業材料雜誌，218，80
，2005。
[73] 謝建德、陳金銘、林大森、郭蓉蓉、林秀芬、洪松慰、董志
偉、蔡雯瑤，工業材料雜誌，206，93，2004。
[74] a) Bayer AG, Eur. Patent, 440, 957, 1991. b) Agfa
Gevaert, Eur. Patent, 564, 911, 1993. c) F. Jonas, W.
Krafft, B. Muys, Macromol. Symp.,100 ,169, 1995.