本論文研究提出一個可於撓性基板上以單壁奈米碳網製作應變感測器與撓性場效電晶體的奈米轉印(Nano-transfer Printing)製程技術，亦稱為高分子膠帶黏著(Polymer Tape Bonding)法，這項技術利用酒精催化化學氣相沉積法(ACCVD)成長單壁奈米碳網於矽基板上，經由黃光微影蝕刻來定義單壁奈米碳網圖型，蒸鍍聚對二甲苯(Parylene-C)高分子薄膜將單壁奈米碳網固定，再將單壁奈米碳網以高分子膠帶黏著法轉印至撓性基板上，得以製作出具有撓曲特性之應變感測器與撓性場效電晶體；全部製程利用現有積體電路製程來完成。文中針對於單壁奈米碳網薄膜在疏密不同對其阻規係數(Gauge Factor)影響以拉伸實驗作驗證，並討論其差異，依目前的研究結果獲得從1.46~8.22不等的阻規係數；而且在研究中也發現奈米碳網元件在寬度縮小至40微米下，其阻規係數會對應增加。本研究所發展的奈米轉印製程技術與壓阻特性研究結果，未來將可應用於結構物安全監控用應變規與生醫用應變感測器等的製作與研發上。此外，本論文所提出的奈米轉印方法也用於製作單壁奈米碳網撓性場效電晶體，利用目前的積體電路製程技術於撓性基板(PEN and polyimide)上製作薄膜電晶體，關於單壁奈米碳網撓性場效電晶體的特性量測方面，則是利用電流-電壓量測(I-V measurement)的方式獲得，依目前研究結果獲得平均的載子遷移率(mobility)為53.89cm2/Vs，特性為P型場效電晶體，而整體的載子遷移率為30.10~ 96.85cm2/Vs不等，且電流開/關比接近100倍。

Nano-transfer printing (nTP) is increasingly used for micro-fabrication of nano-scale materials onto flexible plastic substrates. This thesis reports a novel nTP process (called as “polymer tape bonding”) for single-walled carbon nanonets (SWCNNs) for use in strain sensors and flexible field effect transistors. Traditional SWCNNs grown on silicon substrate by alcohol catalytic chemical vapour deposition (ACCVD) can serve as strain sensing elements in strain sensors and nano electromechanical system (NEMS) sensors, but ACCVD is not well suited to the task. To improve SWCNN fabrication, this paper deposits a Parylene-C thin film on SWCNNs for transfer-printing onto flexible plastic substrates with polyimide tape. Quantification of the fabricated SWCNN strain sensing ability (gauge factor) is performed by comparing two specimens with different pattern features and substrates. Gauge factor is measured by tensile testing. SWCNN density variations relative to the observed gauge factors are discussed. Results show SWCNN gauge factors range from 1.46 to 8.22 depending on the substrate and pattern width. It is further observed that the gauge factor of the presented SWCNN thin film increases when the width of the SWCNN decreases to the low micro-dimensions, i.e. below 40m, indicating a significant scaling factor. Also, the presented nTP method is used to fabricate the SWCNN flexible top-gated field effect transistor on PEN and polyimide base with standard integrated circuit (IC) compatible processes. Finally, electric characteristics of the flexible SWCNN top-gate thin film transistors are measured by the I-V measurement, the SWCNN TFT achieved the averaged mobility of 53.89cm2/Vs with applied Vds=0.1V as a p-type FET, and the mobility is ranged from 30.10 to 96.85cm2/Vs. and the on-to-off ratio of the current devices is approximately 100.

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