本研究係探討錫銀銅鎳銦五元銲錫合金與鎳基材於2.6x103、5.2x103A/cm2電流密度及環境溫度100oC、120oC及150oC，經長時間通電之後，其界面反應行為，藉分析介金屬化合物之厚度成長與鎳層厚度消耗，推測介金屬化合物成長機制以及鎳層消耗機制。
本實驗之結果顯示於150oC及5.2x103A/cm2，其生成之界面介金屬化合物隨時間的變化最為明顯，初期陰極端界面處僅生成介金屬化合物(NiCu)3Sn4，經長時間通電，局部鎳層出現快速消耗之現象，位於鎳層消耗處的介金屬化合物轉變為(CuNi)6Sn5。陽極端亦發生相轉換，介金屬化合物由單一相(NiCu)3Sn4轉變為(NiCu)3Sn4及(CuNi)6Sn5共存於界面處。介金屬化合物的成長機制及鎳層的消耗機制受環境溫度及電流密度影響而改變，溫度升高，其成長機制與消耗機制將趨向於擴散反應控制；若電流密度增加則其機制將趨向界面反應控制。

The present study investigated the interfacial reaction between SnAgCuNiIn solder and the nickel substrate at 2.6x103 and 5.2x103A/cm2 current densities and environment temperatures of 100oC, 120oC and150oC. The mechanisms of the formation of interfacial intermetallic compound (IMC) and the nickel consumption were investigated through the measurement of the thickness variation of the intermetallic compound and Ni layer. The behavior of IMC formation was found to be strongly affected by the reation time at 150oC and 5.2x103A/cm2. The initial IMC formed at cathode was (NiCu)3Sn4 which convert to (CuNi)6Sn5 at the location where the Ni is rapidly consumed. The IMC formed at anode was also found to experience transformation from (NiCu)3Sn4 to coexistence of (NiCu)3Sn4 and (CuNi)6Sn5. The environment temperature and current density will affect the mechanisms of the IMC formation and Ni consumption. Both mechanisms tend to follow diffusion control with increasing temperature. However the mechanism tends to become interfacial reaction control with current density increase.

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