由於氮化鎵具有極佳的光電特性，因此氮化鎵與其衍生之化合物被視為重要的半導體材料，常用於製作發光二極體、雷射二極體、太陽能電池、光感測元件以及高功率電晶體。除此之外，一維結構具有高比表面積與低缺陷濃度之特性，已被廣泛應用於各種光電元件的製作上。而本研究將結合材料與一維結構的優點，使用異質磊晶成長的技術於矽基板上成長氮化鎵微米柱陣列，以及使用氯氣輔助成長的技術於氮化鎵微米柱陣列上成長氮化銦鎵和氮化鋁鎵磊晶晶體，並進一步製作出光電元件。
藉由使用電漿輔助化學氣相沉積反應器，垂直排列的氮化鎵單晶微米柱陣列在矽基板上的異質磊晶成長可以被達成，且具有高的再現性。對於倒六角錐狀的氮化鎵微米柱而言，其垂直成長與其側向成長分別是透過以鎵金屬作為液態觸媒之自催化的VLS成長機制與透過VS成長機制來進行的，而且此倒六角錐狀的氮化鎵微米柱展示出在微米柱與基板之間極小的接觸面積，暗示此結構具有解決異質磊晶所產生的應力累積與較差的晶體品質之問題的潛力。另外，在電漿輔助化學氣相沉積反應器中，經由具高蒸氣壓的金屬三氯化物與氮電漿之間的反應，氮化銦鎵和氮化鋁鎵磊晶晶體的氯氣輔助成長可以在低溫600 ℃下被達成，且一樣有高的再現性。藉由在氮化銦鎵和氮化鋁鎵的成長製程中通入氫氣，可以有效地解決分別源自於材料較差以及較好的鍵結能力所產生出的不同問題，分別是氯電漿在剛成長出的氮化銦鎵晶體上之蝕刻以及不同於(002)之晶面出現的問題。在套用彎曲方程式、布拉格定律與維加德定律至410 nm的氮化銦鎵放光波長以及35.60°的氮化鋁鎵兩倍X光繞射角之後，氮化銦鎵內部的銦組成以及氮化鋁鎵內部的鋁組成可以被計算出來，分別為12.5%的銦以及66.7%的鋁。藉由使用氯氣與電漿，氮化銦鎵和氮化鋁鎵的製程溫度可以被大幅度地降低，使得低溫成長的相關應用可以蓬勃發展。此外，具有氮化銦鎵和氮化鋁鎵共存繞射峰的氮化鋁鎵/氮化銦鎵/氮化鎵的多重核殼式結構，可以經由在氮化鎵微米柱陣列上的逐層成長，被成功地製作出來。透過VS成長機制所成長出的氮化銦鎵和氮化鋁鎵磊晶晶體，具有與氮化鎵底層相同的(002)晶面，代表磊晶晶體有一致的成長取向以及氮化鋁鎵/氮化銦鎵/氮化鎵結構有極佳的晶體品質。除此之外，垂直排列的氮化鎵單晶微米柱陣列於矽基板上的異質磊晶成長以及氮化銦鎵和氮化鋁鎵磊晶晶體於氮化鎵微米柱陣列上的氯氣輔助成長可以被應用至光電元件的製作上，進而有助於元件效率的改善且可以在未來創造出很多產業上的應用。

The heteroepitaxial growth of vertically-aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon (Si) substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method. The morphology of inverted hexagonal GaN cone microrods with the c-axis growth direction shows extremely small contact areas between the microrods and the substrate, suggesting the potential to solve the problems of stress accumulation and poor crystalline qualities of heteroepitaxy. In addition, the chlorine-assisted growth of epitaxial indium gallium nitride (InGaN) and aluminum gallium nitride (AlGaN) crystals was achieved with high reproducibility at the low temperature of 600 ℃ in the PECVD reactor via the reaction between the metal trichlorides with high vapor pressures and nitrogen plasma. After adding hydrogen gas to the processes of InGaN and AlGaN, the problems for the etching of chlorine plasma and the appearance of other crystal planes were solved effectively. Besides, the epitaxial InGaN and AlGaN crystals have the same (002) crystal plane as bottom GaN(002), representing the consistent growth orientation of the epitaxial crystals and the great crystalline qualities of AlGaN/InGaN/GaN structures. Furthermore, the heteroepitaxial growth of GaN microrod arrays on Si substrates and the chlorine-assisted growth of epitaxial InGaN and AlGaN crystals on GaN microrod arrays can be applied to the fabrication of optoelectronic devices, which is beneficial to the improvement in the device efficiency and may bring about many industrial applications in the future.

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