本論文研究半導體製程技術中的離子佈植製程，將其技術應用在三五族氮化鎵所製造的光電元件，分別應用於固態照明的紫外光發光二極體及再生能源的光電化學產氫中。
第一個應用為固態照明的紫外光發光二極體，由於氮化鎵與c-plane藍寶石基板彼此晶格不匹配，使得在成長氮化鎵系列的發光二極體，要先克服材料缺陷對於元件產生的效率衰減。實驗在藍寶石基板上成長一層氮化鎵做為緩衝層，並於緩衝層進行週期性條紋狀的離子佈植，稱此類型基板為橫向過成長基板(ELOG Substrate)，再以此基板用MOCVD法成長發光二極體結構。而氮化鎵只要經過離子佈植，晶格表面受到破壞區域，再成長發光二極體時會產生選擇性成長，氮化鎵不易成長於佈植區域，未經佈植的區域則向上堆疊成長，同時也左右橫向成長，橫向成長的氮化鎵可以抑制氮化鎵與c-plane的藍寶石基板晶格不匹配造成磊晶成長時差排缺陷，並從多項實驗結果來觀察差排缺陷，我們發現離子佈植技術不但可以使氮化鎵材料產生橫向過成長效果，也能夠抑制差排缺陷的生長，以其製作出高品質的光電元件，以橫向過成長(ELOG)的基板製作出光電元件可以獲得較佳光電特性，並發現佈植區域的比例範圍，是會影響整體材料的缺陷密度。
第二個應用為再生能源的光電化學產氫。實驗使用具有週期性條紋狀的結構佈植於氮化鎵，並將矽離子植入未摻雜氮化鎵，使未摻雜氮化鎵轉變材料特性，由u-GaN轉變成n-GaN，並去討論改變週期性條紋狀結構的佈植區域比例，比較佈植區域的比例大小影響光電化學產氫及能量轉換效率的差異成因。

Ion implantation technology plays an important role in semiconductor industry. The research applied various optoelectronic devices about solid state lighting and photo-electrochemical device.
One of application is the ultraviolet light emitting diode. In the paper, Nakamura use regular stripes pattern with SiO2 or SixNy to epitaxy LASER diode. Using the epitaxial lateral overgrowth method makes the window GaN grow lateral in order to require high quality GaN template. The research makes use of ELOG method to adopt the idea replaced SiO2 with Silicon implantation. As for ion implantation destruction, the GaN lattice was damaged by ion bombardment. The lattice distortion make GaN not easily grow material. Such as ELOG overgrowth way, it could overcome the GaN lattice mismatch with Sapphire substrate to reduce threading dislocations. GaN films reduce significantly the dislocation density by ELOG silicon implantation method. According to the experiment result, UV LED after ELOG process enable to enhance light output power about lower defect.
On the other hand, we take the GaN acted as working electrode with regular ion implantation to apply Photo-electrochemical field. Via ion implantation with specific ratio, ELOG GaN not only gather higher photocurrent density than none process GaN, but gain poor solar-to-hydrogen conversion efficiency.

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