本論文主要分為兩大研究主題，第一部份是以雙靶材(ZnO、TiO2)磁控濺鍍法沈積ZnO:Ti薄膜。而第二部份則是以雙靶材(ZnO、Co)磁控濺鍍法沈積ZnO:Co薄膜。

第一部份：
　　本實驗以ZnO及TiO2為磁控濺鍍之靶材，沈積ZnO:Ti薄膜於玻璃基板上。藉由改變磁控濺鍍系統之靶材功率以及工作壓力，可成功地沈積具有高透光度及低電阻之ZnO:Ti薄膜。由XRD、SEM及TEM結構分析得知，ZnO:Ti薄膜為wurzite且具有(002)方向優生成長的結構，分析中並沒有發現任何鈦或氧化鈦的相。由UV-VIS穿透率測量儀顯示，在可見光波段內之透光度達85%以上。當ZnO及TiO2靶材之射頻功率分別為100w及60w，工作壓力為20mtorr時，薄膜具有較低的電阻率2.7×10-2Ωcm。實驗中顯示ZnO:Ti薄膜之電性及光性受到製程參數及添加之鈦含量所影響。

第二部份：
　　本實驗以ZnO及Co為磁控濺鍍之靶材，沈積ZnO:Ti薄膜放Si-wafer基板上。藉由改變濺鍍系統之靶材之功率及種類(RF or DC)、工作氣氛可成功沈積ZnO:Co薄膜。由XRD、ESCA及SEM分析得知，ZnO:Co薄膜具有wurzite及(002)優生成長結構，隨著薄膜內含有過量的鈷原子時，在薄膜內可發現ZnCo2O4及Co相。另一方面，當Co靶材為射頻功率50w及100w時，可製作室溫以上之弱磁性半導體，磁化強度約為10-6emu。實驗中也發現，在工作氣氛中添加氫氣則有效的降低ZnO:Co的電阻率。

　　There are two major subjects in this thesis. The first part is mention about “ZnO:Ti thin films deposited by dual gun magnetron sputtering system”. And the second part is “ZnO:Co thin films deposited by dual gun magnetron sputtering system”.

Part I:
　　ZnO:Ti thin films were deposited on micro slide glass with dual target (ZnO and TiO2) magnetron sputtering system. The electrical and optical properties of the films can be improve by well control of the sputtering condition. With XRD, SEM and TEM analysis, ZnO:Ti thin films show wurzite structure with (002) prefer orientation. Neither titanium nor titanium oxide phase were found. Transparencies above 85% were measured under visible light using UV-VIS spectrophotometer. Experimental results indicated that reisitivity was 2.7×10-2Ωcm when the films deposited under working pressure with 20mtorr. As a results, the experiments show that the electrical and optical properties of the ZnO:Ti thin films were effected by process parameter and Ti content.

Part II:
　　ZnO:Ti thin films were deposited on Si-wafer with dual target (ZnO and Co) magnetron sputtering system. With XRD, ESCA and SEM analysis, ZnO:Co thin films show wurzite structure with (002) prefer orientation. ZnCo2O4 and Co second phase were found when Cobalt content was above the solubility of the films. Beside, dilute magnetic semiconductor (DMS) can be observed with Tc above room temperature, magnetization was 10-6 emu. In our experiments, electrical properties can be improved by induced Hydrogen gas in our sputtering system.

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