本論文主要採超高真空離子束濺鍍（Ion Beam Sputtering, IBS）法改變靶材不同轟擊角度，會製備出不同厚度奈米鈦膜。當鈦膜厚度為奈米尺度時，電阻率上會出下降的情況，由原本塊材10-5(Ω-m)下降至10-6(Ω-m)。當鈦膜厚度小於50~60 nm時，下降最為顯著。這現象將來可應用在光通訊電極、感測器電極、太陽能電池電極上。更進一步在濺鍍氣氛中導入氧氣使其變成二氧化鈦，以及用快速退火爐 (Rapid Thermal Annealing;RTA) 加熱導入氧氣強制變成二氧化鈦，以期在奈米鈦膜表面產生二氧化鈦半導體，並研究其光電性質。奈米二氧化鈦為銳礦型的能帶隙原為3.2 ev，因為晶格壓力變形，造成能帶隙紅移，也因為晶格壓力變形，產生能帶隙能階分裂，造成1個吸收峰變成2個吸收峰。

In this research, the ultrahigh vacuum ion beam sputtering(IBS) system with target oriented in different title angles is used to deposite nano-thin films of different thickness by maintaining the working pressure, working power, working distance, and gas flux constant. When the thickness of Ti thin film is reduced down to the nano-scale, the corresponding resistance would decrease from 10-5 (Ω-m) to 10-6 (Ω-m) When the thickness is less than 50~60 nm, the magnitude of reduction in resistance is more compared with the others, which has a potential to serve as apparent electrodes for applications in optical communications, sensors, and solar cells. Furthermore, the oxygen ambient is maintained during the implementation of IBS process and rapid thermal annealing (RTA) in order to oxidize and convert Ti nano thin film to TiO2 nano thin film for the benefit of peoducing nano scale TiO2 thin film over the surface of the electrode and its optical properties are also studied afterward. Band gap of Anatase phase TiO2 thin film is about 3.2eV. Because of the lattice deformation, the band gap is red-shifted and splitted from one peak into two peaks.

1. S. Zhang, D. Sun, Y. Fu, H. Du, "Recent advances of superhard nanocomposite coatings: a review", Surface and Coatings Technology 2003, 167, 113-119.
2. J. Musil, J. Vlcek, "Magnetron sputtering of alloy and alloy-based films", Thin Solid Films. 1999, 343, 47-50.
3. "Titanium", Columbia Encyclopedia (6th edition). 2000 – 2006. New York, Columbia University Press. ISBN 0787650153.
4. "Titanium", Encyclopædia Britannica. 2006. Retrieved on 2006, 12, 29.19.
5. R.M.A. Azzam, N.M. Bashara, "Ellipsometry and Polarized Light", North-Holland Personal Library, Oxford, 1989.
6. "Titanium", Los Alamos National Laboratory 2004. Retrieved on 2006, 12, 29.
7. R.E. Krebs, "The History and Use of Our Earth's Chemical Elements: A Reference Guide" (2nd edition). 2006. Westport, Greenwood Press. ISBN 0313334382.
8. M. K. Nazeeruddin, M. Gratzel, J. Am. Chem. Soc. 1993, 115, 6382.
9. B. O’Regan, M. Gratzel, "A low-cost, high-efficiency solar cellbased on dye-sensitized TiO2 film", Nature 1991, 353, 737-739.
10. A. D'Orazio, "Design of Er3+ doped SiO2 TiO2 planar waveguide amplifier", J. Non-Crys. 2003, 322, 278-283.
11. V. G. Bessergenev, I. V. Khmelinskiia, R. J. F. Pereiraa, V. V. Krisukb, A. E. Turgambaevab, and I. K. Igumenovb, "Preparation of TiO2 films by CVD method and its electrical, structural and optical properties", Vacuum 2002, 64, 275-279.
12. O. Alfredo, P. Ceorgina, P.J. Sebastina, Solar Energy Mater. Solar Cells. 1999, 59, 137.
13. 陳光華, 鄧金祥, "奈米薄膜技術與應用", 五南圖書出版公司, 2005.
14. 宋健民,"鑽石合成", 全華科技圖書股份有限公司, 民國89年
15. "新型太陽能電池問世",中國科學報, 1998, 4, 22.
16. 樊美公等著,"光化學基本原理與光子學材料科學", 北京, 科學出版社, 2001.
17. 張立德, 牟季美, "奈米材料和奈米結構", 北京, 科學出版社, 2001.
18. M. Anpo, T. Shima, S. Kodam, et al. J. Phys. Chem. 1987, 91, 4305-4310.
19. S. Hayashi, R. Kon, Y. Ichiyama, et al. Phys. Rev. Lett. 1988, 60, 1085-1088.
20. R. Rossetti, R. Hull, J.M. Gibson, et al. J. Chem. Phys. 1985, 82, 552-559.
21. A. Fujishima, K. Honda, Nature 1972, 238, 37-38.
22. A. Nakajima, K. Hashimoto, T. Wantanbe, et . al. Langmuir 2000, 16, 7044-7047.
23. R. Wang, N. Sakai, A. Fujishima, T. Watanabe, K. Hashimoto, J . Phys . Chem . B 1999, 103, 2188-2194.
24. A. Nakajima, K. Hashimoto, T. Wantanbe, K. Hashimoto, Langmuir 2000, 16, 7048-7050.
25. T. Wantanbe, A. Nakajima, R. Wang, et al. Thin Solid Films 1999, 351, 260-263.
26. 魏子, 殷菲, 潭君, 侯萬國,化學通報 2001, 76-80.
27. 王萍, 博士學位論文, 中國科學院上海硅酸研究所. 2000.
28. 李新勇, 李數本, 化學進展, 1996, 8, 231-239.
29. 張青紅, 高濂, 郭景坤, 無機材料學報, 2000, 15, 929-935.
30. B.K. Vainshtein, W.M. Fridkin, V.L. Indenbom, "Structure of Crystals", Berlin, Macmil-lan India Ltd, 1994.
31. R.C. Buchanan, P. Taeun, "Materials Crystal Chemistry", New York, Marcel Dekker, Inc. 1997.
32. W.Y. Wu, J.M. Ting, "Growth and characteristics of carbon films with nano-sized metal particle", Thin Solid Films 2002, 421, 166-171.
33. 王慶祿, "橢偏振測量技術及其應用", 現代物理知識, 2003, 15, 36-37.
34. P. Drude, Ann. Phys . 1887, 32, 584.
35. D.E. Aspnes , A.A. Studna, Appl. Opt. 1975, 14, 220.
36. R.M.A. Azzam, N.M. Bashara, "Ellipsometry and Polarized Lignt", North-Holland Pub-lishing Co. 1977.
37. F. Abels, Ann de Physique, 1950, 5, 596.
38. M. Born, E. Wolf, "Principles of Optics", New York, Pergamon, 1975.
39. 陳光貨, 劉金祥等, "新型電子薄膜材料", 北京, 化學工藝出版社,2002.
40. M.A. Tamor, W.C. Vassel, J. Appl. Phys. 1994, 76, 3923.
41. Y.L. Liui, K. Wu, Y. Hu, Q. Ye, "Technological process and cryswtalline structure of TiO2 semiconductor thin film deposited by RF magnetron sputtering", Vacuum, 2008, 45, 38-41.
42. 丁兆元, 任兆杏,"電子迴旋共振等離子體的研究與應用”, 物理學進展, 第12巻第一期, 1992.
43. D.W. Berreman, J. Opt. Soc. Am. 1972, 62, 502.
44. 藍閩波,"納米材料測試技術",上海, 華東理工大學出版社, 2009,4.
45. Y.T. Liao, "4-point probe user manual", 成功大學微奈米科技研究中心, 2003,03,17.
46. 李靜純, "Alpha-step", 成功大學微奈米科技研究中心, 2009,10,19.
47. Y. Huang, A.J. Rosakis, "Extension of Stoney’s formula to non-uniform temperature distributions in thin film/substrate systems. The case of radial symmetry", J. Mech. Phys. Sol. 2005, 53, 2483-2500.
48. 高濂, 鄭珊, 張靑紅, "納米氧化鈦光催化材料及應用", 北京, 化學工藝出版社, 2002, 12.