本研究鑒於目前電阻率量測法於實用上的可靠度不足而進行改善，並自行設計一使用便利、且易於實測中符合理論電場分布假設之柱狀電流電阻率量測法，改善四點探針法與凡德堡法點電流理論難以實踐的問題。為了要印證此柱狀電流法的量測準確度與穩定度，首先本研究利用二次離子質譜儀SIMS分析P-type矽晶圓硼離子參雜濃度並透過理論計算其電阻率做為量測之標準片，分別利用三種電阻率量測法對此標準片進行量測，從量測結果中顯示柱狀電流法的確較現行兩種電阻率量測法為精準且穩定。驗證柱狀電流法後，再將此量測法應用於微晶矽薄膜太陽能電池電阻率量測上，並輔以表面分析探討其電阻率與結晶狀況及表面形貌的關係。
在薄膜量測中雖然沒有標準片可以印證各量測法的精確性，但從各種量測法電阻率實測與表面分析交互參照的結果看來，表面的結晶率越高、晶球分布越密集、空孔越少、表面粗糙度Ra值越低則其電阻率會呈現越低的趨勢；而柱狀電流法在此薄膜量測中有0.92以上高的實測與理論擬合R-Square值，且組與組間量測結果的一致性也相當高，優於現行普遍使用的兩種量測法。

In this study, given the present resistivity measurement method's reliability in the lack of practical improvements, and to design a system of cylindrical current resistivity measurement method to improve the point current theory in four-point probe method and van der Pauw method is difficult to practice issues; in order to prove the measurement accuracy and stability of cylindrical current method, first we analysis of P-type silicon wafer is boron doping concentration by SIMS and the resistivity through theoretical calculations do measurement standards for the resistivity were measured using three methods to measure this standard piece, from the results shown in cylindrical current method are actually higher than the present resistivity measurement method for the accurate and stable, then we again this measurement method used in microcrystalline silicon thin film solar cells on the resistivity measurements and supplemented by surface analysis of the crystallization conditions and surface topography.
Although the film measurements we do not have a standard piece can confirm the accuracy of the three measurement method, but three measurement method of resistivity measurement and cross-reference the results of the surface analysis, the higher rate of crystalline fraction, surface crystal ball distribution more intensive, less hole, the lower surface roughness is the lower resistivity will show a trend; cylindrical current method in this film has more than 0.92 measured with the theoretical fitting of the high R-Square value, and the group and group consistency of measurement results is quite high, better than the other two measurement methods.

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