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| 研究生： |
謝醉遊 Hsieh, Tsui-Yu |
|---|---|
| 論文名稱： |
增強型堀入式 p 型氧化鎳閘極氮化鋁銦/氮化鎵高電子遷移率電晶體之研究 Study of Normally-off InAlN/GaN HEMTs with Recessed Gate Structure and p-type NiOx Gate |
| 指導教授： |
蘇炎坤
Su, Yan-Kuin |
| 學位類別： |
碩士 Master |
| 系所名稱： |
智慧半導體及永續製造學院 - 半導體製程學位學程 Program on Semiconductor Manufacturing Technology |
| 論文出版年： | 2025 |
| 畢業學年度： | 113 |
| 語文別： | 英文 |
| 論文頁數： | 117 |
| 中文關鍵詞： | 氮化鋁銦 、p 型氧化鎳 、增強型元件 、堀入式閘極結構 、高電子遷移率電晶 體 |
| 外文關鍵詞： | indium aluminum nitride (InAlN), p-type nickel oxide (p − NiO!), enhanced mode devices, recessed gate structure, high electron mobility transistor |
| 相關次數： | 點閱：11 下載：0 |
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校內：2030-08-05公開校外：2030-08-05公開