本論文描述利用熱氧化法在可撓性鋅箔上成長的氧化鋅奈米結構並探討其特性。在此技術中，氧化鋅奈米結構將通過兩個步驟成長於在鋅箔上：鋅箔首先由鋅和氧化鋅粉末的混合物製成，並通過在氧氣的條件下和氧化溫度的變化形成氧化鋅奈米結構。
利用一連串表面形貌，晶體結構和光學分析來觀察樣品，並研究氧化溫度的改變對於奈米結構的影響。剛成長好的鋅箔表面上其鋅晶粒。在300℃下氧化的鋅箔的鋅晶粒上獲得氧化鋅奈米片。對於在高於400℃的溫度下氧化的鋅箔，在鋅晶粒的六邊形表面上合成了雙向氧化鋅奈米線。絕大多數奈米線隨著氧化溫度增加到600℃而演變成奈米塔。結構分析結果表明，氧化鋅奈米線和奈米塔為單晶六方纖鋅礦結構，沿[101]方向生長。
氧化鋅的光致螢光光譜在紫外區域顯示出明顯的峰值，在可見光區域顯示出較寬的綠光發光峰值。此外，隨著氧化溫度的提高，可見光的發光峰值受到強烈的抑制。狹窄的激子半高寬與強烈抑制的可見光的發光峰值結合表現出奈米線的高光學品量。在具有高光學品量的鋅箔上生長的奈米線將適用於可撓性的平面UV裝置應用。另外，通過可變溫PL分析來獲得施子能階和受子能階的結合能。
X射線光電子能譜分析表明，與自然氧化的鋅箔相比，氧化鋅奈米線對氫氧根和水具有高度抗性，表明它們可能應用於高靈敏度感測器。通過兩點式探針I-V測量研究了單根氧化鋅奈米線的電學性質。電阻率為〜93Ωcm。
最後，我們報告這種技術所製造的奈米結構，並與使用不同的生長技術合成的奈米結構進行了比較。它表明這種技術是一種用於合成氧化鋅奈米結構的簡單且通用的方法。使用這種技術製造的奈米結構將來將需要更進一步的研究。

This thesis describes the growth and characterization of ZnO nanostructures grown on flexible Zn foil using the thermal oxidation technique. In this technique, ZnO nanostructures were directly grown on zinc foils through a two-step process: the Zn foils were first fabricated from a mixture of Zn and ZnO powders and then the ZnO nanostructures was achieved by variation of oxidation temperature under oxygen flow.
The samples were analyzed using a range of surface, structural, and optical analyses to determine the effects that varying oxidation temperatures had on the growth modes of these nanostructures. Zn grains formed on the surface of the as-grown Zn foil. ZnO nanoflakes were obtained on the Zn grains for the foil oxidized at 300 °C. For the foil oxidized at temperatures higher than 400 °C, bi-directional ZnO nanowires (NWs) were synthesized on the hexagonal surface of Zn grains. The vast majority of nanowires evolved into nanotowels as the oxidation temperature was further increased to 600 °C. Results of structure analysis indicated that the ZnO nanowires and nanotowers were of single crystal hexagonal wurtzite structure, growing along the [101] direction.
The photoluminescence (PL) spectrum of the ZnO NWs showed sharp peaks in the ultraviolet region and the broad deep-level related green emission peak in the visible region; moreover, visible emission was strongly suppressed with increasing oxidation temperature. The narrow excitonic PL peak combined with strongly suppressed visible emission demonstrated the high optical quality of the NWs. The NWs grown on the Zn foil with high optical quality would be suitable for flexible planar UV device applications. In addition, the binding energies of the donor bands and an acceptor band were obtained through temperature-dependent PL analysis.
Additionally, X-ray photoelectron spectroscopy analysis showed that the ZnO NWs were highly resistant to hydroxyl groups and water compared with Zn foil that was oxidized naturally, suggesting their possible application in high sensitivity sensors. The electrical property of single ZnO NWs was investigated by two-point probe I-V measurement. The resistivity was found to be ～93 Ω cm.
Finally, we report all the nanostructures fabricated by this technique and compared with that synthesized by different growth techniques. It demonstrates this technique is a simple and versatile method for producing ZnO nanostructures. The nanostructures fabricated by this technique will require further investigation in the future.

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