自石墨烯被發現以來，二維材料被證明是能夠以穩定相存在的，並且擁有獨特的材料特性，近幾年，二維過渡金屬硫化物同樣也受到了廣泛的關注。其中，Cu2¬¬Te也因其在熱電領域的優秀性質而受到科學家們的重視。在2020年時Cu¬2Te首次被成功的利用超高真空系統(UHV)製造出單層二維Cu2Te，並展現了單層時的0.91eV的直接能隙，被證明是具有潛力的新興二維材料。
本實驗利用氯化物輔助進行化學氣相沉積，利用氯化物讓我們成功的使製程溫度下降到了500°C的低溫，並成功的在各式基板上沉積出碲化銅試片。我們的試片能夠成長在任意基板上，能夠更有利我們的進行後續的元件量測。此外，我們在製程中調整實驗參數，成功的控制碲化銅沉積厚度，最薄可以達到18 nm的厚度。並後續進行了TEM的量測，在TEM中顯示出了明顯的層狀結構排列，在選區繞射中也發現了明顯的晶格繞射點，顯示出了良好的結晶性。最後，我們還利用了熱探針掃描和加溫拉曼的量測技術，探討了碲化銅試片的熱性質。

Herein we reported a chloride-assisted synthesis of 2D-Cu2Te via chemical vapor deposition. We successfully lower the reaction temperature to 500°C through introducing of chloride. Besides, we enable to directly synthesize Cu2Te on arbitrary substrates in which it was benefit to the flexibility of device fabrication. In addition, by tuning the experimental parameter such as pressure, gas flow, the thickness of resulting films could be controlled from 70 nm to 18 nm. Transmission electron microscope obviously reveal the layer structure of 2D-Copper telluride, and confirmed by selected area electron diffraction (SAED) displaying the clear of diffraction spots. Finally, characterizations of SThM (scanning thermal microscopy) and thermal-Raman reveal the 2D-Cu2Te of thermal property.

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