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研究生: 封羽珊
Feng, Yu-Shan
論文名稱: 噴塗法製備無鉛AgBi2I7之製程與材料特性研究
Process Development and Material Characterization of Spray-Coated Lead-Free AgBi2I7
指導教授: 陳昭宇
Chen, Chao-Yu
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年: 2026
畢業學年度: 114
語文別: 中文
論文頁數: 123
中文關鍵詞: 無鉛鹵化物材料AgBi2I7手動噴塗超音波噴塗大面積製備
外文關鍵詞: Lead-free halide materials, AgBi2I7, manual spray coating, ultrasonic spray coating, large- area fabrica
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  • 採用噴塗法製備無鉛 AgBi₂I₇多晶膜層,並探討其作為 X 光感測材料之製程條件與暗電流特性。近年來,鹵化物鈣鈦礦材料因具有高原子序、可調控能隙及低溫溶液製程等優勢,於直接式 X 光感測領域展現良好性能;然而,含鉛鹵化物鈣鈦礦之毒性與離子遷移問題,促使研究方向逐漸轉向鉍系等無鉛替代材料。AgBi₂I₇ 作為 Ag–Bi–I 系無鉛鹵化物材料之一,其單晶元件已展現良好之 X 光衰減能力與元件性能。然而,單晶成長製程耗時且不利於大面積化;相較之下,溶液製程之多晶膜層具有製程溫度低、可大面積化等優勢,但目前應用於 AgBi₂I₇ 之相關研究仍相對有限,尤其以噴塗製程製備 AgBi₂I₇ 多晶膜層之系統性研究更為少見。
    系統性探討手動氣壓噴塗與超音波噴塗兩種製程中,溶劑系統、製程溫度、噴塗間隔時間及熱退火溫度對 AgBi₂I₇ 膜層形貌、結晶特性及其暗電流之影響。DMF:DMSO 溶劑系統則分別於超音波噴塗與手動氣壓噴塗製程下,建立膜層形貌與暗電流表現較佳之製程條件。
    以手動氣壓噴塗製備之 AgBi₂I₇ 膜層為基礎,進一步比較 MoOₓ、NiOₓ 及 MoOₓ/NiOₓ 雙層阻擋層對元件暗電流之影響。由暗電流量測可知,MoOₓ 單層於負偏壓下具有最低且最穩定之暗電流表現。依據溶劑系統與噴塗方式之比較結果,DMF:DMSO = 4:1 可作為 AgBi₂I₇ 膜層製備之主要溶劑系統;在兩種噴塗方式各自較佳條件下,超音波噴塗樣品於負電場範圍內呈現較低之暗電流密度。另一方面,阻擋層整合結果顯示,於手動氣壓噴塗樣品中加入 MoOₓ 阻擋層可進一步降低元件暗電流。所建立之 AgBi₂I₇ 膜層噴塗製程與界面調控結果,可作為後續 Ag–Bi–I 系無鉛 X 光感測元件開發之參考。

    Lead-free AgBi₂I₇ polycrystalline films were fabricated by spray coating, focusing on process development and electrical characterization for potential X-ray sensing applications. Bismuth-based halides have attracted attention as alternatives to lead-based halide perovskites because of their lower toxicity and improved environmental stability. Although AgBi₂I₇ single crystals have shown favorable X-ray attenuation and device performance, their time-consuming growth process limits large-area fabrication. Solution-processed polycrystalline films therefore provide a more scalable route, while systematic studies of spray-coated AgBi₂I₇ films remain limited.
    Manual pneumatic spray coating and ultrasonic spray coating were used to investigate the effects of solvent system, substrate temperature, spray interval, and annealing temperature on film morphology, crystallinity, and electrical properties. Among the solvent systems examined, DMF:DMSO = 4:1 provided more complete film morphology and was used as the main solvent system for subsequent process studies. Under the selected conditions for each spray method, the ultrasonic spray-coated sample exhibited lower dark current density in the negative electric field region. The effects of MoOₓ, NiOₓ, and MoOₓ/NiOₓ blocking layers were further compared using manually spray-coated AgBi₂I₇ films. The MoOₓ single layer exhibited the lowest and most stable dark current under reverse bias. These results indicate that spray-coating conditions and blocking-layer structures both affect the dark-current behavior of AgBi₂I₇ devices, providing a processing basis for future Ag–Bi–I-based direct X-ray sensing devices.

    摘要i 致謝xiii 目錄xiv 圖目錄xvii 表目錄xx 第一章 緒論1 1.1 前言1 1.2 X光感測器之原理與發展3 1.2.1 直接式與間接式X光感測器3 1.2.2 X光感測器之發展現況與應用領域4 1.3 直接式X光感測元件之參數6 1.3.1 X光衰減與膜厚6 1.3.2 暗電流與訊噪比7 1.3.3 電荷收集效率、光導增益與μτ product8 1.3.4 靈敏度與最低偵測極限9 1.4 研究動機11 第二章 文獻回顧13 2.1 直接式X光感測材料之特性需求13 2.2 金屬鹵化物材料於X光感測器之應用15 2.2.1 含鉛鹵化物鈣鈦礦材料15 2.2.2 無鉛鉍基鹵化物材料16 2.2.3 AgBi2I7材料之特性與研究現況17 2.3 鹵化物膜層之結晶成核與晶粒成長機制21 2.3.1 成核理論與晶粒成長模型21 2.3.2 噴塗製程中之成核控制與再結晶機制23 2.4 大面積膜層之溶液製程30 2.4.1 大面積膜層溶液製程之需求30 2.4.2 常見大面積膜層製程30 2.4.3 氣壓噴塗與超音波噴塗33 第三章 實驗方法與儀器分析35 3.1 實驗儀器與藥品35 3.2 元件製備流程36 3.2.1 FTO基板清潔與蝕刻36 3.2.2 compact TiO2製備37 3.2.3 AgBi2I7前驅液配製37 3.2.4 AgBi2I7 膜層製備38 3.2.5 MoOx與NiOx阻擋層製備38 3.2.6 Au電極製備39 3.3 元件量測之儀器分析原理40 3.3.1 掃描式電子顯微鏡 (Scanning Electron Microscopy, SEM)40 3.3.2 X光繞射分析 (X-ray Diffraction, XRD)40 3.3.3 X光響應之電性特性量測 (X-ray Electrical Characterization)41 3.3.4 傅立葉轉換紅外光譜 (Fourier Transform Infrared Spectroscopy, FTIR)41 第四章 結果與討論42 4.1 前驅液溶劑系統之篩選42 4.1.1 環保溶劑系統之篩選(GVL、TMP)42 4.1.2 傳統溶劑系統之篩選(DMSO、DMF:DMSO)48 4.2 TMP:DMSO 溶劑系統之超音波噴塗製程分析54 4.2.1 不同製程溫度之表面形貌分析54 4.2.2 不同噴塗間隔時間之分析57 4.3 DMF:DMSO 溶劑系統之超音波噴塗製程分析62 4.3.1 不同製程溫度之表面形貌分析62 4.3.2 不同噴塗間隔時間之分析63 4.3.3 不同熱退火溫度之分析68 4.4 DMF:DMSO 溶劑系統之手動噴塗製程分析75 4.4.1 不同製程溫度之表面形貌分析75 4.4.2 不同噴塗間隔時間之表面形貌分析77 4.4.3 無熱退火與不同熱退火溫度之分析79 4.5 不同噴塗製程之膜層特性及暗電流特性分析87 4.5.1 不同噴塗製程之表面形貌分析87 4.5.2 不同噴塗製程之暗電流特性分析89 4.6 不同阻擋層之元件暗電流特性分析91 第五章 結論與未來展望94 5.1 結論94 5.2 未來展望95 參考文獻96

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