| 研究生: |
陳淑芳 Chen, Shu-Fang |
|---|---|
| 論文名稱: |
離子束濺鍍異質磊晶鐵薄膜於矽(001)之成長與分析 Growth and Characterization of Heteroepitaxial Iron Thin Films on Si(001) |
| 指導教授: |
劉全璞
Liu, Chaun-Pu |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2005 |
| 畢業學年度: | 93 |
| 語文別: | 中文 |
| 論文頁數: | 132 |
| 中文關鍵詞: | 鐵 、離子束濺鍍 、量子點 |
| 外文關鍵詞: | IBS, Quantum Dot, Iron |
| 相關次數: | 點閱:68 下載:2 |
| 分享至: |
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本篇論文是研究鐵量子點,致力於量子點成長參數最佳化的研究及其不同型貌的討論。在半導體基板上成長金屬量子點近年來受到廣泛注意,因為可以作為電磁元件的應用。我們成功地利用超高真空離子束濺鍍系統,在低溫下成長鐵量子點於矽(001)基板上,並且改變成長參數,例如:濺鍍溫度、覆蓋率、離子數能量等,有系統的討論濺鍍參數對量子點型貌及性質的影響。利用二次電子顯微鏡( Secondary Electron Microscope,SEM ) 以及原子力顯微鏡( Atomic Force Microscope,AFM )來觀察量子點之型貌及其密度與尺寸大小分布的情形。此外,利用穿透式電子顯微鏡( Transmission Electron Microscopy,TEM ) 分析其微結構,並利用高解析拉塞福背向散射分析儀( High Resolution Rutherford Backscattering Spectroscopy,HRBS )及高解析電子能譜儀( High Resolution X-ray Photoelectron Spectrum,HRXPS ) 探討其成份及鍵結情形,最後以超導量子干涉磁量儀來( Superconducting Quantum Interference Devise Magnetometer,SQUID )分析鐵量子點之磁性質。我們發現在室溫至300oC下濺鍍的鐵量子點,皆與矽基板有磊晶關係,但是表面型態卻有極大的差異。例如:在同一個基板溫度,隨著覆蓋率的變化,表面型態會由島嶼狀變成薄膜,薄膜表面包含方型的空孔,表面型態的演進與元素混合有關係。除此之外,也需要使用應變能及表面能來解釋此複雜的形成機制。
The main object of this work is study of iron quantum dot. We are devoted to optimize the parameters of growing quantum dot. Epitaxial growth of magnetic metal dots on semiconductor substrates has been extensively studied for the potential applications in magneto-electronic devices. We have successfully grown epitaxial Iron dots and films on Si(001) substrates by low–temperature ion beam sputtering (IBS). The effects of deposition parameters were systematically studied including deposition temperature, surface coverage and ion energy flux and have found that the quality and morphology of the deposited iron were affected tremendously. The detailed morphology of the epitaxial dots has been characterized by atomic force microscopy, secondary electron microscopy and transmission electron microscopy, while the iron concentration and bonding were characterized by Rutherford backscatter spectroscopy and High Resolution X-ray Photoelectron Spectrum, respectively. Finally, the magnetic properties were analyzed by Superconducting Quantum Interference Devise Magnetometer. The iron films deposited at the temperature ranges from room temperature to 300oC are all found to have epitaxial relationship with the Si substrate. However, various surface nanostructured morphology results. For example, for a fixed temperature, the deposited Iron would change from islands to a film enclosing high-density pits of square and rectangular in shape. The morphology evolution was due to the interplay between element intermixing. In addition, strain and surface energy were also used to explain the complicated formation mechanism.
[1]H. P. Rocksby, J. Soc. Glass Tech. 16, 171, (1932).
[2] http://public.itrs.net.
[3] D.Bimberg, M. Grundmann, N. N. Lednstov, Ch. Ribbat, R. Sellin, Zh. I. Alferstov, P.S. Kop’ev, M. V. MaximCv, V. M. Ustinov, A.E. Zhukov, J. A. Lott. “ Quantum Dot Lasers : Theory and Experiment”, AIP Conference Proceedins, 2001, Vol. 560 Issue 1, p178, 20p.
[4] D. Bimberg, M. Grundmann, F. Heinirchsdorff, N. N. Ledentsov, V. M. Ustinov, A. E. Zhukov, A. F. Tsatsul’nikov, P. S. Kop’ev, and Z. I. Alferov, Thin Solid Films 367, 235 (2000).
[5] P. M. Varangis, H. Li, G. T. Liu, T. C. Newwll, A. Stintz, B. Fuchs, K. J. Malloy, and L.F. Lester, Electron. Lett. 36, 1544 (2000).
[6] K. Otsubo, N. Hatori, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe, M. Sugawara, Jpn. J. Appl. Phys., Part2 43 L1124 (2004).
[7] W.Z.Li, S. S. Xie, L. X. Qian, B. H. Chang, B. S. Zou, W. Y. Zhou, R. A. Zhao, and G. Wang, Science 274, 1701(1996).
[8] M. Geller, C. Kapteyn, L. M. Kirsch, R. Heitz, and D. Bimberg, Phys. Status Solidi B 238, 258 (2003)
[9] J. R. Heath, P. J. Kuekes, G. S. Snider, and R. S. Williams, Science 280, 1716 (1998).
[10] H. Shi, W.-B. Tsai, M. D. Garrison, S. Ferrari, and B. D. Ratner, Nature (London) 398, 593 (1999).
[11] 化工材料與商情, no. 36, p11 (2002).
[12] T. Takagahara and K. Takeda, Phys. Rev., B 46 15578 (1992).
[13] Ashoori R C., Nature, 379, 413 (1996).
[14] Mceuen PL, Science, 278 1729 (1997).
[15] S. Veprek, Thin Solid Films, 297, 145 (1997).
[16] A. P. Alivisatos, Science, 271, 933 (1996).
[17] D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).
[18] D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, IEEE J. Quantum Electron. 6, 452 (2000), and references therein.
[19] K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, Appl. Phys. Lett. 76, 3349 (2000).
[20] Y. Qiu, P. Gogna, S. Forouhar, A. Stintz, and L. F. Lester, Appl. Phys. Lett. 79, 3570 (2001).
[21] O. B. Shchekin and D. G. Deppe, Appl. Phys. Lett. 80, 3277 (2002).
[22] T. M. Hsu, W.-H. Chang, and C. Y. Lai, N. T. Yeh and J.-I. Chyi, J. Appl. Phys. 91, 4399 (2002).
[23] B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J. L. Rouviere, Phys. Rev. B 56, R7069 (1997).
[24] J. Bloch, J. Shah, W. S. Hobson, J. Lopata, and S. N. G. Chu, Appl. Phys. Lett. 75, 2199 (1999).
[25] A. Passaseo, G. Maruccio, M. De Vittorio, R. Rinaldi, R. Cingolani, and M. Lomascolo, Appl. Phys. Lett. 78, 1382 (2001).
[26] A. Passaseo, G. Maruccio, M. De Vittorio, S. De Rinaldis, T. Todaro, R. Rinaldi, and R. Cingolani, Appl. Phys. Lett. 79, 1435 (2001).
[27] S. Tanaka, S. Iwai, and Y. Aoyagi, Appl. Phys. Lett. 69, 4096 (1996).
[28] P. Ramvall, S. Tanaka, S. Nomura, P. Riblet, and Y. Aoyagi, Appl. Phys. Lett. 75, 1935 (1999).
[29] 張惠貞, Fe-Cr-Co 薄膜之磁特性研究, 國立成功大學材料科學及工程學研究所碩士論文, 1994.
[30] S. Sun, C. B. Murray, D. Weller, L. Folks, and A. Mose r, Science 287, 1989 (2000).
[31] F. J. Himpsel, J. E. Ortega, G. J. Mankey, and R. F. Willis, Adv. Phys. 47, 511 (1998).
[32] J. Shi, S. Gider, K. Babcock, and D. Awschalom, Science 271, 937 (1996).H.
[33] Arthur R. Smith, Kuo-Jen Chao, Qian Niu, Chin-Kang Shih, Science 273, 226 (1996).
[34] W. B. Su, S. Chang, H. Y. Lin, Y. P. Chiu, T. Y. Fu, C. S. Chang, and Tien T. Tsong, Phy. Rev. B 68, 033405 (2003).
[35] Y. Adda and J. Philibert, in La Diffusion dans les Solids, edited by F. Perrin, 1996 Bibliotheque des Sciences et Techniques Nucleaires ( Presses Universitaires de France, Paris, 1996 ).
[36] Le Thanh Vinh, J. Chevrier, and J. Derrien, Phy. Rev. B 46, 15946 (1992).
[37] Rossum, Marcvan. Maex, Karen, “Properties of Metal Silicides”, 1995.
[38] O.L. Anderson, in : V. Dehant, K.C. Creager, S.-i. Karato, S. Zatman ( Eds. ), Earth’s Core : Dynamics, Structure, Rotation. Geodynamics Series, vol. 31, American Geophysical Union, Washington, DC, 2003, pp. 83-103.
[39] R. Kohlhaas, P. Dunner and N. Schmitz-Pranghe, “ Uber die Temperturabhangigigkeit der Gittrpapmeter von Eisen, Kobalt und Nickel im Bereich hoher Temperaturen.” ZEITSCHRIFT FUER ANGEWANDTE PHYSIK, 23 (4), 245-249 (1967).
[40] Ho-Kwang Mao, W.A. Bassett and T. Takahashi, “ Effect of Pressure on Crystal Structure and Lattice Parameters of Iron up to 300 kbar. “ JOURNAL OF APPLIED PHYSICS, NEW YORK, 38 (1), 272-276 (1967).
[41] G. A. Prinz, J.J. Kerbs, Appl. Phys. Lett. 39 (1981) 397.
[42] Y. B. Xu, E. T. M. Kernohan, M. Tselepi, J. A. C. Bland, and S. Holmes, Appl. Phys. Lett. 73, 399 (1998).
[43] V. L. Moruzzi, P. M. Marcus, K. Schwarz, and P. Mohn, Phys Rev. B 34, 1784 (1986).
[44] Y. Tsunoda, J. Phys. C 1, 10427 (1989).
[45] Y. Tsunoda, Y. Nishioka, and R. M. Nicklow, J. Magn. Magn. Mater. 128, 133 (1993).
[46] D. Schmitz, C. Charton, A. Scholl, C. Carbone, and W. Eberhardt, Phy. Rev. B 59, 4327 (1999).
[47] D. Qian and X. F. Jin, Phy. Rev. Lett 87, 227204-1 (2001).
[48] S. Kennou, N.Cherief, R.C. Cinti and T. A. Nguyen Tan, Surf. Sci. 211/212 (1989) 685.
[49] P. Bertoncini, D. Berling, P. Wetzel, A. Mehdaoui, B. Loegel, G. Gewinner, C. Ulhaq-Bouillet, V. Pierron-Bohnes, Surface Science 454–456, 755–760 (2000)
[50] Zheng Gai, BiaoWu, J. P. Pierce, G. A. Farnan, Dajun Shu, MuWang, Zhenyu Zhang, and Jian Shen, Phy. Rev. Lett. 89 235502-1(2002)
[51] Zheng Gai, G. A. Farnan, J. P. Pierce, and J. Shen, Appl. Phys. Lett. 81, 742 (2002).
[52] J. P. Pierce, M. A. Torija, Z. Gai, Junren Shi, T. C. Schulthess, G. A. Farnan, J. F. Wendelken, E. W. Plummer, and J. Shen.
[53] 張立德、牟季美,”奈米材料和奈米結構”, 2002 p. 62~66.
[54] Du Y W, J. Appl. Phys., 63, 4100 (1998).
[55] 都有為、徐明祥、吳堅等, 物理學報, 41(1), 149 (1992).
[56] Jawb I S, Bean C P, Phys. Rev., 100, 1060 (1955).
[57] Ohshiner K Z, IEEE Trans., MAG-23, 2826 (1987).
[58] K. N. Tu and J. M. Mayer, “Silicide Formation”, in Thin Films-Interdiffusion and Reactions”, edited by J. M. Poate, K. N. Tu and J. W. Mayer (Wiley, New York, 1978) p.359.
[59] Y. Takagi, A. Nishimura, A. Nagashima, J. Yoshino, Surface Science 514, 167 (2002).
[60] ”Magnetic Properties of Ferromagnetic Metals and Alloys”, p811.
[61] Kimihito TAGAYA, Yoshikazu HAYASHI, Yoshihito MAEDA, Kenji UMEZAWA and Kiyoshi MIYAKE, Jpn. J. Appl. Phys. 39, 4751 (2000).
[62] Ming Han, Miyoko Tanaka, Masaki Takeguchi, Kazuo Furuya, Thin Solid Films 461 (2004) 136.
[63] E. G. Moroni, W. Wolf, J. Hafner, R. Podloucky, Phy. Rev. B 59, 12860 (1999).
[64] M. Sasase, T. Nakanoya, H. Yamamoto, K. Hojou, Thin Solid Films 401 (2001) 73.
[65] T. Saito, H. Yamamoto, M. Sasase, T. Nakanoya, K. Yamaguchi, M. Haraguchi, K. Hojou, Thin Solid Films 415 (2002) 138.
[66] M. Haraguchi, H. Yamamoto, K. Yamaguchi, T. Nakanoya, T. Saito, M. Hojou, K. Hojou, Nucl. Instrum. Methods Phys. Res. 206 (2003) 313.
[67] K. Yamaguchi, M. Haraguchi, T. Katsumata, K. Shimura, H. Yamamoto, K. Hojou, Thin Solid Films, (doi:10.1016/j.tsf.2004.02.051).
[68] V. Le Thanh, J. Chevrier and J. Derrien, Phys. Rev. B 46
(1992) 15946.
[69] A.L. Vazquez de Parga, J. de la Figuera, C. Ocal and R. Miranda, Ultramicroscopy 42-44 (1992) 845.
[70] U. Kafader, C. Pirri, P. Wetzel and G. Gewinner, Appl. Surface Sci. 70/711 (1993) 573.
[71] N. Onda, J. Henz, E. Miiller, K.M. M~ider and H. Von Kfinel, Appl. Surface Sci. 56-58 (1992) 421; Phys. Rev. B 47 (1993) 10567.
[72] Kensuke Akiyama, Seishiro Ohya, Hiroshi Funakubo, Thin Solid Films 461 (2004) 40.
[73] Rossum, Marcvan. Maex, Karen, “Properties of Metal Silicides”, 1995, p67.
[74] M. C. Bost and J. E. Mahan, J. Appl. Phys. 58, 2696 (1985).
[75] M. Bost, J.E. Mahan, J. Appl. PHYS. 58 (1985) 2696.
[76] Yoshihito Maeda, Haruhiko Udono, Yoshikazu Terai, Thin Solid Films 461 (2004) 165.
[77] Y. Makita, Proc. Japan-UK Joint Workshop on Kankyo Semiconductors, Tsukuba, 2000, p. 1.
[78] Albert-Laszlo Barabasi, Appl. Phys. Lett. 70, 2565 (1997).
[79] P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley and M. J. Whelan, Electron Microscopy of Thin Crystals, Revised Editon, Huntington, New York: Kireger (1997).
[80] M. F. Ashby and L. M. Brown, Phil. Mag., 8, 1083 (1963).
[81] J.F. Moulder, W.F. Sticle, P.E. Sobol, K.D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, Physical Electronics Inc. Eden Prairie, Minnesota, USA, 1995.
[82] A. Avila and I. Montero, L. Galan and J. M. Ripalda, R. Levy, J. Appl. Phys. 89, 212 (2001).
[83] J.M. Gallego, J. Alvarez, J.J. Hinarejos, E.G. Michel, R. Miranda,
Surf. Sci. 251–252 (1991) 59.
[84] Suklyun Hong, Current Applied Physics 3, 457–460 (2003)
[85] J. Alvarez, A. L. Vazquez de Parga, J. J,Hinarejos, J. de la Figuera, E. G. Michel, C. Ocal, and R. Miranda, Pgy. Rev. B 47, 16048 (1993).
[86] X. Deng and M. Krishnamurthy, Phy. Rev. Lett. 81, 1473 (1998).