本文針對微奈米尺度的薄膜熱膨脹及熱擴散係數進行量測與分析研究。對於薄膜熱膨脹係數量測方法，在以往的研究中往往都對材料有許多的限制，如結晶性、導電性等，而沒有一個簡易且通用的量測方法。本研究以表面粗度儀量測試片在不同溫度下的表面形貌，利用試片在不同溫度下，表面形貌的曲率半徑變化，計算薄膜的熱膨脹係數。此方法是利用材料受溫熱膨脹的特性，薄膜與基板熱膨脹係數不同而導致結構彎曲而改變曲率半徑，此量測方法對於材料性質並無限制，是一種簡單快速的量測方法。
薄膜熱擴散係數係以溫度振盪法結合變頻率方式進行量測，以薄膜兩不同界面溫度變化的相位差推導出熱擴散係數。實驗上以致冷片(Peltier)為熱源結合方波電路產生溫度振盪，以熱電偶量測薄膜不同界面的溫度變化，並將熱電偶的量測訊號以鎖相放大器(Lock-in Amplifier)進行分析，得到薄膜不同界面間溫度變化的相位差。實驗上的誤差如熱飄移(Thermal drift)，可以鎖相放大器抓取特定頻率的訊號克服；因熱電偶接觸狀況不同造成的誤差，透過變頻率實驗方法，在資料處理上，以線性回歸方法找出頻率-相位差的關係，即可找出熱電偶接觸狀況對實驗所造成的影響。透過以上的實驗及分析方法即可求出薄膜的熱擴散係數。

This research focuses on the thermal expansion coefficient and thermal diffusivity of thin film specimens. In the past studies, without a simple and versatile method of measurement, the methods of measuring the thermal expansion coefficient are many restrictions on the material often, such as crystallinity and electric conductivity. In the present study, the thermal expansion coefficient can be estimated by measuring the change of the radius of curvature of the thin film specimens surface morphology under difference temperature. With taking advantage of the material properties, the difference of the thermal expansion coefficients between thin film structure and the substrate will cause the whole structure bending and changing the radius of curvature. The method is not restricted to material, is a simple and fast method of measurement.
To measure the thermal diffusivity, the heat conduction solution in the multi-layered specimens is developed to be one-dimensional and varying with the amplitude and frequency of the oscillating temperature imposed. The phase lag of temperature due to the difference layers of the thin film can be expressed as a function of film thickness, oscillating temperature frequency, and thermal diffusivity. Experimentally, with a varying frequency of the oscillating temperature imposed by the peltier beneath the specimen’s substrate, the thermocouples are placed to have their tip in contact with the top surfaces of two adjacent layers individually in order to measure temperature signal of these two surfaces. Then the measured signals are analyzed by Lock-in amplifier to obtain the temperature phase lag. This phase lag value is then substituted into the previously developed phase lag expression to determine the thermal diffusivity of the thin film specimen.

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