藉由將單晶薄膜從基板上分離，轉移至其他基板上，創造出新的異質介面。本研究利用犧牲層的蝕刻來轉移單晶薄膜技術，能夠在轉移後依然保有原來的單晶薄膜特性，不會損壞結構。
CoFe_2 O_4(CFO)是一種具有亞鐵磁性和磁異向性特性的材料，也因為磁滯伸縮特性，被廣泛應用於磁性感測器上。為了討論CFO與應力相關機制，我們以La_0.7 Sr_0.3MnO_3(LSMO)當作犧牲層將CFO薄膜freestanding到可饒式投影片上，觀察freestanding前和freestanding後的表面和應力變化，在施加不同磁場後，利用磁力顯微鏡(Magnetic force microscopy；MFM)觀察不同磁場下的磁矩變化。本研究中將利用拉曼光譜儀(Raman spectroscopy)量測CFO不同應力下的聲子振動，利用拉曼振動峰的平移，觀察不同應力下CFO磁滯伸縮效應的影響。

This study employs sacrificial layer etching to facilitate the transfer of single crystal thin film technology. This transfer process allows for the preservation of the original characteristics of the single crystal thin film without causing any structural damage. CoFe_2 O_4(CFO) is a material exhibiting ferrimagnetism and magnetic anisotropy, making it widely utilized in magnetic sensors due to its hysteresis and stretching properties. In this study, we employed La_0.7 Sr_0.3 MnO_3(LSMO) as a sacrificial layer to enable the freestanding of CFO films on portable slides or any other flexible substrates. We investigated the surface and stress variations before and after the freestanding process. Subsequently, by applying different magnetic fields, we utilized the magnetic force microscope (MFM) to examine the changes in magnetic moment. Additionally, Raman spectroscopy was employed to analyze the effect of CFO hysteresis stretching under various stress conditions. This study establishes a standard fabrication process and demonstrates basic manipulation of the physical properties for the freestanding transformation of functional oxides.

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