本論文提出不同幾何圖形之硒化銅銦(Copper Indium diselenide，CuInSe2)化合物半導體做為元件主動層，成功以脈衝電沉積技術與陽極氧化鋁模板(Anodic aluminum oxide，AAO)製備出不同幾何圖案之CuInSe2光電元件與應用，其本研究論文分為兩部份分別做作為討論；(i) 以脈衝電沉積技術在不同pH值環境沉積CuInSe2薄膜，藉以討論結晶品質、表面形貌，以及二次相生成。繼之，以化學水浴法(Chemical bath deposition，CBD)沉積硫化鎘摻雜硼(Cadmium sulfide doped boron，Cd1-xS:B)薄膜、並且做為窗口層，以調變不同硼劑量探討Cd1-xS:B薄膜之光電特性、摻雜機制、以及硼電負度(Electron negativity，EN)影響CdS能隙之變化。在電沉積環境之pH值為1.73與硼濃度為100 mM可分別得到最佳參數，將其設計成太陽能電池結構(Al/AZO/Cd1-xS:B/CuInSe2/Mo/Glass)，並獲得初步效率2.37%(Voc: 293 mV, Jsc: 26.85 mA/cm2,and FF: 30.1%)。續之，調變不同碘濃度藉以鈍化CuInSe2表面，藉此將效率進一步提升至3.77% (Voc: 330 mV, Jsc: 28.60 mA/cm2,and FF: 39.9%)，且表面複合速率由2.328x103cm/S降至1.947x103cm/S；(ii) 以及陽極氧化鋁模板(Anodic aluminum oxide，AAO)輔助成長CuInSe2奈米柱，施以一電場牽引電解液中金屬離子、並利用AAO模板奈米通道限制金屬離子移動方向，藉此探討CuInSe2奈米柱成核機制、結晶品質、填孔率、以及晶粒尺寸大小等。隨後以穿透式電子顯微鏡(Transmission Electron Microscopy，TEM)、選區繞射圖(Selected-area electron diffraction，SAED)以及紫外線/可見光分光光譜儀(Ultraviolet–visible spectroscopy，UV-Vis)，分別檢測CuInSe2奈米柱結構、單-多晶相以及材料量子效應。爾後，分別以鉑(Platinum)、銀(Silver)金屬形成歐姆接觸與蕭特基二極體，藉此確認本研究論文所製備奈米柱為p-type半導體。混合不同界面活性劑(Dimethyl sulfoxide，DMSO)之有機導電膠體(PEDOT)，以解決p-CuInSe2奈米柱表面荷葉效應(Lotus effect)，藉此順利形成PEDOT/p-CuInSe2(Core-shell)結構。最後，以蕭特基二極體與PEDOT/p-CuInSe2兩種元件結構探討載子傳輸行為、載子復合速率、能帶結構、以及二次相復合路徑作為分析。

In this dissertation, ternary compound semiconductor copper indium diselenide (CuInSe2) was designed as an active layer with different geometric structures. The CuInSe2 was also prepared as an optoelectronic device, and pulse electrodeposition technology and anodic aluminum oxide (AAO) template were applied. This proposal is divided into two parts as follows. (i) Fabrication of CuInSe2 thin films by pulse electrodeposition with various pH values was conducted to investigate crystal quality, surface morphology, and second-phase generation. Subsequently, a cadmium sulfide-doped boron (Cd1-xS:B) thin film was deposited as the emitter layer by chemical bath deposition. The effects on photoelectric characteristics, doping mechanism, and bandgap value of boron electron negativity were determined. The optimal parameter at pH value was 1.73 for CuInSe2 and the boron concentration was 100 mM for Cd1-xS:B. These parameters were considered in the design of the thin-film solar cell (Al/AZO/Cd1-xS:B/CuInSe2/Mo/glass). Initial conversion efficiency was 2.37% (Voc, 293 mV; Jsc, 26.85 mA/cm2; and fill factor [FF], 0.301). Moreover, the device further increased the conversion efficiency to 3.77% (Voc, 330 mV; Jsc, 28.60 mA/cm2; and FF, 0.399) with passivation of the CuInSe2 surface with various iodine concentrations. Surface recombination decreased from 2.328 × 103 cm/S to 1.947 × 103 cm/S. (ii) CuInSe2 nanowire (NW) was investigated with electric field traction metal ions in electrolyte and AAO nanochannel restriction ion diffusion. The nucleation mechanism, crystal quality, pore–filling ratio, and grain size of CuInSe2 NW were determined. Subsequently, transmission electron microscopy, selected-area electron diffraction, and ultraviolet–visible spectroscopy were conducted to reveal the CuInSe2 NW structure, crystal phase, and quantum effect. At this point, platinum and silver metals were utilized to form Ohmic contact and Mott–Schottky plots. A p-type semiconductor, the CuInSe2 NW was a surface modified through titration with PEDOT that contained different concentrations of dimethyl sulfoxide. Finally, the Schottky diode and PEDOT/CuInSe2 core–shell structure devices were investigated for their carrier transfer mechanism, carrier recombination ratio, and energy band, including the second-phase generation for their resultant recombination.

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