本論文研究的主題為利用同步輻射光致光電子能譜在微米尺度下探測石墨烯的殼層電子能階，並以此判斷石墨烯在含金塗層氧化矽基板上產生的能帶位移情形。我們以機械剝離法製備石墨烯，並說明如何以光學顯微鏡或掃描電子顯微鏡分辨石墨烯的位置，最後以拉曼能譜判斷石墨烯的層數。在同步輻射光致光電子能譜測量中，比較懸浮態石墨烯與含金塗層基板上的石墨烯，我們發現受金塗層的影響將會導致石墨烯0.4eV的p型能帶位移，且此效應在單、雙層石墨烯中造成的摻雜程度不同。我們同時在隨時變的光電子能譜測量中證實此石墨烯系統上，藉由金屬即時補充流失的光電子，可以有效消除樣品表面的電荷累積現象。最後，我們以氮電漿氮化石墨烯5~20分鐘，並即時測量石墨烯殼層電子能階的化學位移，可判斷氮原子與碳原子隨氮化時間不同其鍵結形式的改變。

The core-level electronic structure of exfoliated graphene sheets on a Au-coated SiOx substrate have been studied by using synchrotron radiation photoelectron spectroscopy (SR-PES) on a micro-scale. We firstly demonstrated the visibility of graphene on the Au-coated SiOx substrate by micro-optical characterization, and determined the number of graphene layers by micro-Raman spectroscopy. Because of the elimination of charging effect, precise C 1s core-level characterization revealed different levels of Au-coating-induced p-type doping on single- and double-layer graphene sheets. Moreover, the bonding structures of nitrogen-plasma treated graphene were determined using C 1s and N 1s core-level spectra.

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