本論文主要探討銅銦二硫作為近紅外光檢測器之吸收層的研究。銅銦二硫薄膜具有很高的光吸收係數及太陽能轉換效率，其能隙落於近紅外光譜，因此可以當近紅外光檢測器之吸收層。此研究吸收層之形成是先濺鍍銅銦先驅物於鍍好鉬薄膜之基板，然後使用適當的硫化製程，製備出銅銦二硫薄膜，上面再鍍鋁薄膜並用微影製程定義鋁電極，形成金屬–半導體–金屬(金半金)之近紅外光檢測器。
本論文研究不同先驅物的比例對元件特性的影響，並透過XRD、SEM、EDS、拉曼光譜儀、I-V測量及螢光光譜儀，對薄膜進行晶體結構、表面型態、成分比例進行分析及近紅外光響應之檢測。
在研究中，我共濺鍍Cu/In靶材，利用控制各靶材之濺鍍功率(瓦數)去形成不同比例的銅和銦先驅物，當先驅物銅/銦比增加，經硫化製程後CuInS2 (CIS)薄膜結晶性逐漸改善(形成緻密之晶粒)。在使用適當的先驅物比例及硫化後，得到的近紅外光檢測器在電極間距2µm下，呈現出10倍的光電流放大效果，如果用分子束磊晶方式形成CIS材料，我們應該可以得到靈敏度更高之近紅外光光電流放大效果。

In this dissertation, CuInS2 (CIS) thin films as the absorption layer of a near infrared photodetector (PD) is studied. CIS thin film has high optical absorption coefficient and high solar energy conversion efficiency, and its bandgap is within the NIR spectrum. Therefore, it is a good NIR PD candidate as the absorber layer. In this study, formation of CIS film was prepared by co-sputtering Cu/In thin films on a Mo coated substrate followed by appropriate sulfurization. Deposition of Al film and photolithography processes were used to pattern the electrodes of the metal-semiconductor-metal (MSM) PDs.
In this study, the influence of precursor Cu/In ratio on CIS thin film as well as was on device performance is investigated. Scanning electron microscope was used to observe the film’s morphology, crystalline phase and orientation were determined by X-ray diffraction patterns and Raman analysis, and an energy-dispersive X-ray spectroscopy was used to analyze the compositions of the films. Photoluminescence measurements were to used for investigating CIS film’s quality and its possible bandgap, Current-voltage characteristics under or without NIR illumination was to characterize the PDs that fabricated.
Precursors of different Cu/In ratios, controlled by adjusting co-sputtering powers, were sulfurized, as the atomic ratio of Cu/In increases (0.78-1.22 range), its crystallinity of the CIS film improves. The best PD sample that fabricated exhibits a one-order of magnitude in photocurrent amplification with 2-µm electrode spacing. More sensitive amplification can be expected by using other CIS forming methods, such as molecular beam epitaxy.

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