本論文主要在研製射頻微波電路的Ka/k 頻帶之相位移器及衰減器。在目前的研究，提出一個ka頻帶的180°寬頻切換式相移器，該電路應用兩個藍吉耦合器並設計非共振的開關，另外改變電晶體佈局減低寄生效應來增加電晶體隔離度及金屬線耦合效應，使用藍吉耦合器使該電路具有寬頻、低插入損耗變異、低相移變異及好的折返損耗，本電路中心頻率為35GHz，利用電晶體做為開關來控制相位輸出0°或180°，在操作頻寬30GHz~37GHz之間，插入損耗為7dB~8dB，插入損耗變異在1dB以下，操作頻寬為21%。在30GHz~40GHz之間，輸入折返損耗及輸出折返損耗大於18dB。當電晶體全部關閉，隔離度大於25dB。核心晶片面積為0.914mm2，使用的為全訊0.25μm pHEMT製程。
本論文也提出的電路為一個k頻帶寬頻反射式可調衰減器，採用寬頻的藍吉耦合器架構，反射式終端電路為兩組二極體做可變電阻再串連電阻元件，具有簡易的電路匹配架構，只需要一個直流控制電壓源。操作在中心頻率26GHz，在頻寬20-31GHz之間，可調衰減範圍大於15dB並具有低的折返損耗變動，操作頻寬大於42%的優異表現，核心晶片面積為0.376mm2，使用的製程為WIN 0.15μm pHEMT。

Design consideration and performance of a Ka/K-band monolithic phase shifter and attenuator are presented. In the current study, a Lange coupler was used to maintain the bandwidth of the phase shifter, and a new field-effect transistor layout was designed to reduce the parasitic effect and enhance the isolation of the switch. Using the Lange coupler technique, the 180° phase shifter gained advantages in terms of broadband, low insertion loss variation, low phase shift variation, and good return loss. Measured results demonstrate an insertion loss of 7dB to 8 dB and an insertion loss variation of less than 1 dB, with the return losses better than 18 dB over the 30GHz to 37 GHz RF bandwidth. These results are in good agreement with the simulated results. The chip dimension is 0.914mm2 through the Transcom 0.25μm pHEMT process.
A broadband reflection type variable attenuator at K-band is also presented. The attenuator only consists of one Lange coupler, two sets of diode series resistance components and a simple matching network. It only has one dc control bit. The center frequency is operated at 26 GHz. The measured attenuation dynamic range is more than 15 dB and has the low return loss variation. The operating bandwidth is over the 20 GHz to 31 GHz RF bandwidth (42%). The chip size is 0.376mm2 using the WIN 0.15μm pHEMT process.

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