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研究生: 廖柏翰
Liao, Po-Han
論文名稱: 原子層沉積氧化鋁與柑橘果膠混成材料之記憶體與仿突觸功能研究
Resistive Memory and Synaptic Functionality of ALD-Al₂O₃/Citrus Pectin Hybrids
指導教授: 張御琦
Chang, Yu-Chi
學位類別: 碩士
Master
系所名稱: 工學院 - 工程科學系
Department of Engineering Science
論文出版年: 2025
畢業學年度: 113
語文別: 英文
論文頁數: 120
中文關鍵詞: 柑橘果膠電阻式記憶體原子層沉積突觸可塑性氧化鋁
外文關鍵詞: Citrus Pectin, Resistive Memory, Atomic Layer Deposition, Synaptic Plasticity, Aluminum Oxide
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  • 隨著人工智慧與物聯網技術的迅速發展,高效能且低功耗的記憶體元件需求日益增加。可變電阻式記憶體(RRAM)因具備高速運作、非揮發性及高儲存密度等特性,成為新一代記憶體技術的重要候選。本研究以可生物降解的柑橘果膠為基材,製備柔性RRAM元件,並結合原子層沉積(ALD)技術沉積氧化鋁(Al₂O₃)薄膜,以提升元件的電性穩定性與降低漏電流。實驗結果顯示,經Al₂O₃修飾後的元件展現超過10⁴的高開關比,具備100次以上的重複切換穩定性,以及長達10⁴秒的資料保持特性。此外,該裝置可成功模擬生物突觸行為,呈現明顯的短期與長期突觸可塑性。此研究證明柑橘果膠/氧化鋁複合結構不僅能作為高性能、環保記憶體材料,亦具潛力應用於神經形態運算與類腦計算領域,為永續電子元件發展提供新契機。

    With the rapid advancement of artificial intelligence and the Internet of Things, there is a growing demand for high-performance and low-power memory devices. Resistive random-access memory (RRAM) has emerged as a promising candidate due to its high-speed operation, nonvolatility, and high storage density. In this study, biodegradable citrus pectin was utilized to fabricate flexible RRAM devices, and aluminum oxide (Al₂O₃) films were deposited by atomic layer deposition (ALD) to enhance device stability and suppress leakage current. The resulting devices exhibited an ON/OFF ratio exceeding 10⁴, stable switching endurance over 100 cycles, and data retention up to 10⁴ seconds. Moreover, the devices successfully mimicked biological synaptic behaviors, showing distinct short-term and long-term synaptic plasticity. These findings demonstrate that the citrus pectin/Al₂O₃ hybrid structure not only serves as an eco-friendly, high-performance memory material but also holds great potential for applications in neuromorphic and brain-inspired computing, offering new opportunities for sustainable electronics.

    摘要 i Abstract ii 誌謝 iii Figure Captions ix Chapter 1 Introduction 1 1.1 Non-Volatile Memory 1 1.1.1 Ferroelectric Random Access Memory (FeRAM) 2 1.1.2 Magnetoresistive Random Access Memory (MRAM) 4 1.1.3 Phase-Change Random Access Memory (PCRAM) 5 1.1.4 Resistive Random Access Memory (RRAM) 7 1.2 The Integration of Biomaterials with Bioinspired Neural Networks 9 1.3 Citrus pectin 11 1.4 Aluminum oxide (Al2O3) 12 1.5 Synapse 13 1.6 Optical synapse 15 1.7 Motivation 17 Chapter 2 Experiment details 19 2.1 Thin Film Fabrication Equipment 19 2.1.1 Electronic Scale Platform 19 2.1.2 Magnetic Stirrer 20 2.1.3 Ultrasonic Oscillator 21 2.1.4 Drying Oven 22 2.1.5 Spin Coater 23 2.1.6 Sputter 24 2.1.7 Atomic Layer Deposition (ALD) 25 2.2 Analytical Instruments 27 2.2.1 Power Supply (Keithley 2636B) 27 2.2.2 Probe Station 28 2.2.3 Atomic Force Microscope (AFM) 29 2.2.4 X-ray Photoelectron Spectroscopy (XPS) 30 2.2.5 X-ray Diffraction (XRD) 32 2.2.6 Focused Ion Beam (FIB) 33 2.2.7 Transmission Electron Microscope (TEM) 34 2.3 Experiment flow 35 Chapter 3 Investigation of the Effects of Citrus Pectin on RRAM and Synaptic Behavior 37 3.1 Results and discussions 38 3.1.1 AFM 38 3.1.2 FIB Cross-sectional Analysis 39 3.1.3 X-ray Photoelectron Spectroscopy (XPS) Analysis 41 3.1.4 Effect of Different Al₂O₃ Thicknesses on the Performance of RRAM 43 3.1.5 Electrical Characterization 47 3.1.6 Endurance Characteristics 49 3.1.7 Endurance Enhancement via Al₂O₃ Dielectric Layer 50 3.1.8 Conduction Mechanism Analysis 52 3.1.9 Conduction Mechanism of CAL Device 54 3.1.10 Multilevel Storage and Low-Power Operation Potential 56 3.1.11 Multilevel Switching Stability and Reproducibility 58 3.1.12 Statistical Analysis of Switching Voltage Stability 59 3.1.13 Current Distribution Analysis and Memory Reliability Evaluation 61 3.1.14 Temperature-Dependent Resistance Analysis 63 3.1.15 Comparison of conduction mechanisms 65 3.1.16 Analog Synapse Behavior and Biomimetic Potential 67 3.1.17 Synaptic weight update under various pulse voltages 69 3.1.18 Synaptic Plasticity: Potentiation and Depression Behavior 76 3.1.19 Synaptic Plasticity: Repeatable Potentiation/Depression Cycling Behavior 78 3.1.20 Paired-Pulse Facilitation (PPF) and Short-Term Plasticity Analysis 80 3.1.21 Paired-Pulse Depression (PPD) and Short-Term Inhibitory Plasticity in CAL Device 81 3.1.22 Retention Performance of CAL Device 82 3.1.23 Long-Term Stability Test of CAL Devices 84 3.1.24 CAL Device Performance Comparison 85 3.2 Summary 86 Chapter 4 Conclusion 89 Chapter 5 Future Work 91 References 93

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