ZnSnN2是近三年來開始被討論的穩定態氮化物。根據文獻，ZnSnN2之能隙約為2電子伏特，可有效地利用可見光範圍接近600奈米，在光催化應用相當具有潛力。另外，其耐強酸強鹼之性質使之可在不同環境之下正常發揮其壓光電以及光催化特性。此外，其不對稱之晶格可具備有壓電相關性質，能更進一步提升光催化效率。在目前分解有機汙染物以及綠色能源之環保意識之下，其壓光電性質可望成為新一代之綠色材料。然而單晶之ZnSnN2僅成功被合成於高溫高壓環境下，目前較少以濺鍍法製程方式合成。
本研究中，以高效能變頻濺鍍製程製備Sn3N4參雜Zn 原子合成Zn-Sn3N4濃度梯度在FTO基材上。藉由調整氬氣與氮氣之比例，濺射壓力，基材加熱溫度，電子槍到基板之工作距離，及Zn參雜量來探討ZnSnN2之合成之參數條件。並透過XRD，SEM，XPS，及I-V 特徵圖來研究其壓電相關性質。
未來工作部分，將調整ZnSnN2之形貌以形成具有優良結晶度與較好的分離程度奈米柱陣列，以大幅提高其壓電相關性質。

Fabrication of the new class of ternary nitrides (Zinc Tin Nitride (ZnSnN2)) is full of challenges because of its high formation energies. However, it is thermodynamically stable, and owns a direct band gap of approximately 2 eV, which is excellent for photocatalysis. Furthermore, ZnSnN2 is an environmentally friendly material since it only contains earth-abundant and non-toxic elements – Zn and Sn, and it possesses high tolerance to acidic and basic environments enabling applications at a wide range of tough environments. Orthorhombic ZnSnN2 has a non-centrosymmetric structure, enabling piezotronic and piezophototronic properties, which is demonstrated to further enhance the efficiency of photocatalysis in this study.
In this study, ZnSnN2 was successfully obtained from the Zn-Sn3N4 composition spread using RF reactive sputtering on a FTO substrate. We found the Locations 1 and 2 exhibited the substantial amount and excellent crystallinity of ZnSnN2. Pna21 and Pmc21 orthorhombic structures of ZnSnN2 was identified from the measured XRD patterns via the deconvolution algorithm of the peaks at around 33o and 35o. In addition, HCl(aq) was used to etch away metal Sn in the sample for the piezo-related properties measurement. The asymmetric I-V characteristics and the Schottky barrier height as a function of pressures suggested the piezotronic and piezophototronic effects, which further supported the successful fabrication of orthorhombic structure of ZnSnN2.

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