| 研究生: |
龔翌捷 Kung, Yi-Chieh |
|---|---|
| 論文名稱: |
高熵陶瓷(Na0.2Bi0.2K0.2La0.2Sr0.2)TiO3摻雜Sb對介電電容儲能特性之研究 The Effect of Sb Doping on the Dielectric Capacitor Energy Storage Properties of High-Entropy Ceramics (Na0.2Bi0.2K0.2La0.2Sr0.2)TiO3 |
| 指導教授: |
齊孝定
Qi, Xiao-Ding |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2026 |
| 畢業學年度: | 114 |
| 語文別: | 中文 |
| 論文頁數: | 119 |
| 中文關鍵詞: | 高熵陶瓷 、多價態摻雜 、弛豫鐵電體 |
| 外文關鍵詞: | High entropy ceramics, Multivalent doping, Relaxor ferroelectric |
| 相關次數: | 點閱:26 下載:0 |
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本研究採用固相燒結法於空氣中燒結,製備銻摻雜之高熵(Na0.2Bi0.2K0.2La0.2Sr0.2)(Ti1-xSbx)O3(x=0-0.07)無鉛介電陶瓷系統,該系統透過在A- site引入等莫耳比之五元陽離子,成功將晶格之組態熵(∆S_conf)最大化,形成具備高度局部化學無序與強烈應變的母相。然而僅憑高熵效應所建構的母相,雖然有助於降低殘餘極化並提升儲能效率,卻仍難以同步解決高溫燒結過程中因鉍等易揮發元素所誘發之氧空缺等缺陷問題,此類缺陷極易導致漏電流上升與擊穿電場強度下降,進而限制可回收儲能密度的提升空間,為突破此一瓶頸,本研究進一步藉由高熵效應,利用銻易產生〖Sb〗^(3+)及〖Sb〗^(5+)的雙價態特性進行改質設計,以提升介電電容儲能性能。
透過X光繞射儀分析與擬合計算結果顯示,隨著銻摻雜量的增加,樣品內部出現局部的鈣鈦礦母相向燒綠石相的結構轉變。結合晶體化學理論可知,由於〖Sb〗^(3+)進入A-site引發強烈的晶格扭曲,進一步促使燒綠石相析出。藉由此種於鈣鈦礦基質形成的燒綠石相以阻止高電場下擊穿通道的產生,以提升材料的擊穿電場強度。
在缺陷方面,透過X射線光電子能譜結果擬合證實,隨著銻摻雜量由x=0增加至x=0.07,樣品中〖Ti〗^(3+)鍵結比例由22%降至12%,氧空缺Ov比例由54%降至24%,同時代表低價鉍之〖Bi〗^(2+)亦接近消失。此一系列缺陷濃度的下降,與〖Sb〗^(5+)進入B-site位置取代〖Ti〗^(4+)所誘導之電荷補償機制相符,顯示〖Sb〗^(5+)於B-site之取代對於改善材料電絕緣性具有關鍵作用。
透過二次相的形成以及減少缺陷的雙重策略,提升材料的能隙與絕緣電阻率,大幅降低漏電流並提升擊穿電場強度,使樣品展現極佳的儲能表現。在700kV/cm的高電場下,其可回收儲能密度高達 8.15 J/cm³,儲能效率則提升至89.24%;與近期高熵無鉛介電儲能電容的文獻相比,擊穿電場普遍介於180-620 kV/cm,鮮少有體系之擊穿電場強度超越700kV/cm。此外,透過韋伯統計分析顯示其韋伯模數β為16.78,就可靠度而言,文獻普遍以韋伯模數β>10作為判斷樣品是否具有良好電性均勻性之基本門檻,本研究不僅高於此一門檻,亦與近期同類高熵陶瓷文獻中β介於11.81至22.22之間相符,顯示樣品具備極佳可靠度。
綜合上述結果,本研究證實透過銻的多價態摻雜能有效誘發高熵陶瓷之相變與抑制缺陷,使擊穿電場強度大幅提升,令樣品在儲能電容領域極具發展潛力。
Lead-free (Na0.2Bi0.2K0.2La0.2Sr0.2)(Ti1-xSbx)O3 (x=0-0.07) high-entropy ceramics based on the ABO3 perovskite structure were synthesized by solid-state sintering in air at 1150˚C. Five equimolar cations were introduced at the A-site, forming a highly disordered matrix. High-entropy effects led to an enhanced energy storage efficiency due to a small remnant polarization. However, there were other problems remained, such as the defects caused by preferential loss of volatile elements during sintering at high temperature, which resulted in large leakage current and hence a low dielectric breakdown strength (Eb). As a result, the recoverable energy density (Wrec) was limited. To minimize the problem, the high-entropy ceramics were doped with Sb. X-ray diffraction analysis showed that the perovskite phase in the samples was partially transformed into pyrochlore structure due to a large distortion of the Sb doping at A-site. The segregated grains of pyrochlore phase blocked the electric conducting channels when a large external field was applied. As a result, Eb was increased significantly. X-ray photoelectron spectroscopy (XPS) showed that both Sb3+ and Sb5+ were present in the samples. Mixed oxidation states of Ti3+ and Ti4+ were also observed in XPS, and the Ti3+ proportion decreased from 22% to 12% due to Sb doping, which also resulted in a decrease in both oxygen vacancies and Bi2+ ions. This was consistent with the need for charge compensation and helped to reduce leakage current, leading to a further improvement in Eb. Weibull analysis showed that the samples had a reliable Eb of 701 kV/cm, which was very high. As a result, a very high Wrec of 8.15 J/cm3 was achieved.
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