本論文製作出具有磁特性的有機半導體電晶體，探討不同磁化方向對於磁性電晶體的影響。實驗中利用分子束磊晶系統將Pentacene與Ni進行共蒸鍍，製作出三種不同Ni摻雜濃度之Pentacene薄膜，接著此具有磁性的薄膜製作成電晶體元件，探討不同Ni濃度的摻雜下，其對於電晶體的載子傳輸特性的影響，以及Ni在主動層當中所扮演的角色。
本實驗的第一部分為利用不同儀器來分析不同摻雜Ni濃度之Pentacene薄膜。利用化學分析電子能譜儀進行薄膜量測，從電子能譜的分析結果顯示，不同摻雜Ni濃度之Pentacene薄膜的相對濃度比值(Ni：Pentacene)為0.0450、0.0693與0.1596。利用X光繞射分析儀量測不同摻雜Ni濃度之Pentacene薄膜，從XRD圖中的分析結果顯示，Pentacene在繞射角為5.7°與11.4°時產生相對應的繞射峰(001)與(002)，繞射峰(001)與(002)的半高寬並不會隨著Ni的摻雜濃度增加而改變，代表Ni的摻雜對於Pentacene的晶格排列不會有太大影響，另一方面，繞射峰(002)相對於(001)的強度會隨著Ni的摻雜濃度增加而變弱，代表Pentacene分子在垂直方向上的排列有變差的現象。利用原子力顯微鏡分析不同摻雜Ni濃度之Pentacene薄膜，可以從表面形貌上觀察到，Ni的摻雜使得Pentacene薄膜的表面粗糙度提高。在利用磁力顯微鏡分析之前，會將樣品以不同方向磁化後才進行量測，由實驗結果可以發現未摻雜之Pentacene薄膜無論在磁化前與磁化後皆沒有磁性訊號，然而有摻雜Ni之Pentacene薄膜在磁化前後皆有磁性訊號，且會隨著外加磁場變化而改變。
本實驗的第二部分以電性分析來探討不同摻雜Ni濃度之Pentacene主動層所構成的電晶體，此外，也會以不同方向的磁場將電晶體磁化後才進行電性量測。以轉換特性曲線圖分析的載子移動率結果來看，單純只有Pentacene構成主動層的電晶體，其不會受到外加磁場磁化的影響而使得載子移動率大幅地變化，另一方面，由摻雜Ni之Pentacene構成主動層的電晶體，其載子移動率會隨著外加磁場的變化而改變，尤其是當外加磁場的磁化方向與載子通道平行時，載子移動率變化的幅度可以達到三倍。由量測樣品界面缺陷能態密度與次臨界擺幅的實驗結果得知，Ni對於電晶體的影響在於主動層裡，其本身具有自發性的自旋極化，使得載子在傳輸的過程中受到此自旋極化而產生散射，進而使得有摻雜Ni的電晶體輸出電流下降。
本實驗最後一部分以拉曼光譜分析Ni的摻雜與否對於Pentacene薄膜的影響，從實驗結果得知，Ni的摻雜使得Pentacene分子側邊的振動有紅位移的現象，且經由磁化後會使得紅位移的現象更顯著，表示Pentacene分子間電子自旋耦合程度提高。

The spintronics behaviors are the critical element to affect the physical properties of organic semiconductors. In this study, we design a new organic semiconductor with magnetic properties by using co-evaporation method. Then, we investigate the magnetization effects within different magnetic field directions for Ni:pentacene-based transistors. The active layer of transistors is fabricated by electron beam evaporation system. There are three different concentrations of Ni atoms which doped into a pentacene film as the active layer of transistors.
The interface states at the interface between semiconductor and insulator layer and subthreshold swing of transistors were not remarkably affected by the Ni-doping effect. However, when the intensity of Ni atoms increased within the pentacene film, the bulk defects increased mightily.
The field-effect carrier mobility of pentacene-based transistor without Ni-doping isn’t affected by applying an external magnetic field. On the other hand, the carrier mobility of Ni:pentacene-based transistor is remarkably increased by applying an external magnetic field. This significant change occurs when the direction of applied magnetic field is parallel to the conducting channel. The above results show that the Ni atoms can provide spontaneous magnetic moments and cause the good electron-spin coupling to achieve high efficiency charge transport in pentacene film.

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