摘要
導電高分子因可撓、可導電等特性，為傳統半導體元件提供了新穎的研究與應用方向，如電子皮膚、可曲撓式顯示器與面板、曲面太陽能電池與光偵測器等。但上述軟性可撓的優勢，也同時帶來應用上的限制，易扭曲的高分子主幹形成形貌與電子結構缺陷，導致了電子元件傳導效率低下，不只限制了應用，缺陷更在不同尺度干擾光、電學量測，捕捉或散射載子，讓研究者無法直接研究材料的本質電子結構。爲了有效降低軟性材料因製程引入的各類形貌缺陷，必須建立分子能有序成膜的製程，並定量分析製程中，主幹扭曲的數量與扭曲的程度，才能量化評估製程參數對缺陷的影響，從分子尺度直接控制電子結構效能，開展有機電子學的應用並深化研究。
本研究使用偏極化拉曼散射頻譜儀做爲量測工具，分析導電高分子有序性對應的拉曼震盪頻率因缺陷產生的變化，以此為基礎進行散射峰的擬合分析，定量分析不同有序性下主幹扭曲角度與對應的缺陷比例。此外，本研究使用拉曼散射光強矩陣，推算導電高分子有序相與散射光的空間關係，搭配散射峰擬合，成功分析形貌缺陷在不同薄膜有序性下的缺陷量及空間分佈，模擬的散射曲線與實驗吻合，確認分析方法學的正確性，為巨觀範圍的元件電學量測，提供微觀導電高分子結構缺陷訊息的分析方法學。

SUMMARY

In this work, an advanced polarized Raman scattering spectroscopy was successfully built, and applied to analyze the dispersed lattice oscillation frequency corresponding to the disorders of conducting polymers. In this analysis work, the scattering peaks with higher vibronic frequency was identified, and were assigned as the distorted defects on the molecular backbones. And conducting polymer thin films with different level of disorders were quantitatively analyzed. The scattering matrix of light intensity was simulated to calculate the spatial distribution of distorted backbones using the crystal theory. And this analytical methodology can successfully verify that structural distortion changes in organic conducting polymers.

Keywords: Polarized Raman spectroscopy, Conducting polymers, Crystal lattice distortion defect

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