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研究生： 沈子勛
Shen, Tzu-Hsun
論文名稱： 比較探討垂直入射和邊射之(氮)砷化銦鎵/砷化鎵光檢測器
Comparative Study of Vertically-Incident and Edge-Coupled InGaAs(N)/GaAs-based Photodetectors
指導教授： 莊文魁
Chuang, Ricky Wenkuei
蘇炎坤
Su, Yan-Kuin
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2008
畢業學年度： 96
語文別： 英文
論文頁數： 94
中文關鍵詞： 光檢測器 、砷化鎵
外文關鍵詞： photodetector, GaAs
相關次數： 點閱：67  下載：1 
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    • 在本論文中，砷化銦鎵/砷化鎵光檢測器是由金屬有機化學氣相沉積法成長。首先，我們製做了垂直入射型的光檢測器，並且量測元件的光響應值跟量子效率，量測出來的結果，得到較低的光響應值跟量子效率，這表示在吸收效率上，並沒有很理想，為了改善這些缺點，我們製做邊射型的光檢測器，我們發現，邊射型的光檢測器可以在不改變磊晶結構的條件下，而可以在光響應值跟量子效率上，得到至少十倍的改善。
    我們在砷化銦鎵中，掺入少量的氮，達到波長1.3微米。同樣地，在不改變磊晶結構的前提下，藉由製做邊射型光檢測器，可以得到較好的光響應值跟量子效率。最後，我們可以藉由掺入銻來改善我們的磊晶結構，降低光檢測器的暗電流。

    In this thesis, InGaAs/GaAs-based photodetectors are grown by metal organic vapor phase epitaxy (MOVPE). First, vertically-incident photodetectors are formed, but with low responsivity and quantum efficiency. In order to improve their performances without changing the epitaxial structures, the edge-coupled photodetectors were fabricated for comparison. The responsivity of edge-coupled photodetectors was achieved with more than 10 times of improvement compared to conventional vertically-incident photodetectors.
    To achieve 1.3um photodetection, nitrogen was incorporated into InGaAs to extend absorption wavelength to the desired target. Similarly, The responsivity and quantum efficiency of edge-coupled photodetectors were also improved without changing the epitaxial structures. Finally, an improvement in the quality of epitaxial photodetector structures could be realized through additional antimony incorporation, where a reduction in the dark current was noted.

    Contents Abstract (In Chinese) .................................................................................. I Abstract (In English) .................................................................................. II Acknowledgements .................................................................................... IV Contents ....................................................................................................... V Table Captions ........................................................................................ VIII Figure Captions ......................................................................................... IX Chapter 1 Introduction .................................................................... 1 1-1 Introduction ..................................................................... 2 1-2 Long Wavelength GaAs-based Photodetectors ............... 5 1-3 Organization of the Thesis .............................................. 8 Chapter 2 Background Theory ...................................................... 9 2-1 Theoretic Foundation of the Photodetectors .............. 10 2-1-1 Mechanism of the Current Transport for Junction Photodetectors................................................................ 10 2-1-2 Mechanisms of p-i-n Photodetectors ............................ 12 2-1-3 Theory of Edge-Coupled Photodetectors ...................... 14 2-2 Theoretical Analysis of p-i-n Photodetectors ............... 16 2-2-1 Dark Current ................................................................. 16 2-2-2 Responsivity and Quantum Efficiency ......................... 21 2-2-3 Junction Breakdown Voltage ........................................ 22 2-3 Metal Organic Vapor Phase Epitaxy Growth System ... 25 2-3-1 Kinetically Limited Region ........................................... 29 2-3-2 Thermodynamically Limited Region ............................ 30 2-3-3 Mass Transport Limited Region ................................... 30 2-4 Measurement System .................................................... 31 2-4-1 Current-Voltage Measurement System ......................... 31 2-4-2 Vertically-Incident Responsivity Measurement System ........................................................................... 32 2-4-3 Edge-Coupled Responsivity Measurement System ...... 33 Chapter 3 Vertically-Incident and Edge-Coupled InGaAs/GaAs MQW p-i-n Photodetectors ........................................ 34 3-1 InGaAs/GaAs MQW p-i-n Structures ........................... 35 3-2 Fabrication Process ....................................................... 36 3-2-1 Vertically-Incident Photodetectors ............................... 36 3-2-2 Edge-Coupled Photodetectors ....................................... 39 3-3 Comparison of Vertically-Incident and Edge-Coupled InGaAs/GaAs MQW p-i-n Photodetectors ................... 43 3-4 Comparison of Different Periods of InGaAs/GaAs MQW p-i-n Photodetectors ...................................................... 52 3-5 Summary ....................................................................... 64 Chapter 4 1.3m InGaAsN/GaAs MQW p-i-n Photodetectors . 65 4-1 InGaAsN/GaAs MQW p-i-n Structures ........................ 66 4-2 Comparison of Vertically-Incident and Edge-Coupled InGaAsN/GaAs MQW p-i-n Photodetectors ................ 67 4-3 Improvement of Responsivity by Antimony Incorporation ................................................................. 75 4-4 Summary ....................................................................... 81 Chapter 5 Conclusions and Future Work ................................... 82 5-1 Conclusions ................................................................... 83 5-2 Future Work .................................................................. 85 References .................................................................................................. 87

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    Chapter 4
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    Chapetr 5
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