鑽石成核於經由超音波振盪與空蝕作用而非使用鑽石晶種法預處理基板的方法，藉由微波電漿化學氣相沉積系統，空蝕作用溶液選用水、乙醇、乙二醇來進行超音波振盪基板，而超音波振盪則使用鉬粉、鎢粉、二氧化矽片來進行基板振盪預處理，所得之成核密度高達未處理的一千倍到一萬倍。
基板的製備是利用濺鍍機濺鍍薄膜於二氧化矽晶圓上，微波電漿化學氣相沉積系統主要是使用H_2-rich/CH_4氣體混合參數，CH_4濃度使用10%，腔體工作壓力設定95 Torr，基板溫度950-1050°C之間，實際鑽石製程時間為七分鐘使環境穩定並加熱基板，與清理基板表面，十五分鐘鑽石成核與成長，總共製程時間為二十二分鐘。
利用掃描式電子顯微鏡判斷與計算，以水進行空蝕作用二氧化矽晶圓先濺鍍鉻薄膜再濺鍍鉬銅合金薄膜之試片，可以使得鑽石成核密度超過〖10〗^8 〖 cm〗^(-2)，超音波振盪作用基板預處理則平均得到之鑽石成核密度約為〖10〗^7 〖 cm〗^(-2)。藉由AFM量測預處理表面之表面粗糙度發現超音波振盪作用基板造成的表面粗糙度比起空蝕作用基板還大，但表面粗糙度越大，不一定擁有高成核密度。透過532nm綠光拉曼分析，探討超音波振盪與空蝕作用所設計的三種基板，鑽石特徵峰落在1335〖 cm〗^(-1)左右，伴隨著鑽石缺陷、非鑽石相之D-band與G-band以及TPA訊號。
超音波振盪與空蝕作用而非使用鑽石晶種法預處理基板的方法詳細機制尚未明朗，但是大概是使表面缺陷，製造表面粗糙度所致，兩種預處理的方法好處在於操作簡單、成本低廉，且不需要使用鑽石晶種法與偏壓法即可達到高成核密度。

Diamond nucleation on the substrates pre-treated by sonication and cavitation effects without diamond seeding methods by microwave plasma chemical vapor deposition can increase the diamond nucleation density by more than three to four orders magnitude from that of non-treated substrates. In order to do the experiment of sonication and cavitation effects, choosing water, alcohol, Ethylene Glycol for cavitation and Mo powder, W powder, SiO2 flakes for sonication to test the effects by those methods is the key step for the substrate pretreatments. Diamond nucleation of the water cavitation pretreatment samples which are first sputtered chromium thin film, then sputtered MoCu thin film can make the diamond nucleation density exceed 〖10〗^8 〖 cm〗^(-2), besides, sonication pretreatment samples can reach about 〖10〗^7 〖 cm〗^(-2). Surface roughness treated by the sonication effect is greater than the cavitation effect, but the greater the surface roughness, it does not necessarily have a higher nucleation density.

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