論 文 摘 要
本論文主要採超高真空離子束濺鍍（Ion Beam Sputtering, IBS）法與奈米壓痕技術(Nano-indentation)進行矽、碳、矽/碳/矽奈米複合薄膜的成長與機械性質檢測研究，探討製程參數、退火溫度及材料微結構變化，對於機械性質之影響，建立最佳化複合薄膜製程參數組合與複合膜之層數、厚度與機械性質的關係。
在雙層結構中，碳膜臨界厚度達100 nm時，碳/矽複合強度會大於原本類鑽碳，矽的成份也同時抑制沉積類鑽碳薄膜因晶格扭曲造成的變形。矽在應變率小的情況下，介面處反向拉扯碳原子的活動，限制類鑽碳膜變形的擴張，所以矽膜的總厚度越厚，抑制類鑽碳薄膜變形的效果就越佳。
當退火溫度達750℃時，非晶碳膜與多晶矽完全反應，SiC微粒高密度析出，矽膜夾層的厚度，依然是熱穩定性與SiC析出密度與粒徑的關鍵。當上層矽膜臨界厚度10 nm以上時，隨著退火溫度上升到900℃時，將形成3.25~7.25×1010 crystals/cm2高密度分佈SiC的奈米顆粒且SiC粒徑介於10~30 nm之間；並在複合結構Si/C/C=25/100/50 nm參數中，得到最佳的熱穩定性；隨著基質所包覆的SiC奈米粒子的粒徑越小，顆粒尺寸顆徑小於40 nm，則硬度值越高，熱穩定性越佳。

Abstract
In this research, the layer-by-layer carbon/silicon nanocomposite films are deposited by ultra high vacuum ion beam sputtering system (UHV-IBS) at room temperature together with post vacuum annealing. Then, it’s used nano-indentation technical to proceed the inspection of mechanical properties of silicon, carbon, silicon/carbon/silicon composite films. The relations between deposition procedures, rapid thermal temperature, micro structure of composite films of mechanical properties and residual stresses are established after process and material analysis in this thesis.
In the two-layer structure, when the critical thickness of carbon film reaches 100 nm, carbon/silicon composite strength will be originally greater than single carbons. The silicon involves the activity of the carbon atom backward in the interface in a situation that the strain rate is small, expansion of the limiting DLC carbon films. So total thickness of silicon films thick, the DLC films of suppressing strain result the better.
When temperature of annealing up to 750℃ in temperature, amorphous carbon and complete response with poly-crystalline silicon films. The high density of SiC particles were separated. While acting as above layer of silicon film of critical thickness 10 nm was rised to 900℃ that will be form nano-particles that 3.25~7.25×1010 crystals/cm2 high density distribution Sic and the particle size between 10 nm and 30 nm. In composite structure parament of Si/C/Si=25/100/25 nm can get the best thermal stability. As SiC wrapped up and covered of base carbon of nano-particles is the smaller than 40 nm for the size of particle, then the higher hardness is, the better thermal stability is.

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