本論文工作是使用離子束濺鍍系統成長CuAlO2薄膜。實驗分成二部份，第一部份藉由離子束濺鍍系統成長[CuO(10 Å)/Al2O3(10 Å )]多層膜，在1100℃高溫退火成長具有CuAlO2晶相之薄膜。第二部份則成長[CuO(10 Å)/Fe2O3(1 Å、3 Å)/Al2O3(10 Å)]多層膜，藉由1100℃高溫退火後研究摻雜Fe之CuAlO2薄膜結構、電性、磁性上之特性。
由SQUID量測摻雜Fe之多層膜，顯示樣品呈現鐵磁性；但電阻大於200M歐姆。我們藉由400℃通氧、通氬後退火處理，發現通氧退火後樣品導電性有改善並觀察到磁性上有變大之趨勢。而通氬退火後樣品導電性則無改善並觀察到磁性有變小之趨勢。磁性來源我們推測應與樣品內缺陷較有關係，確切的機制我們將於日後做進一步的研究。

In this study,we deposited CuAlO2 thin films on Al2O3(0001) substrate by ion beam sputter. The first work we deposited [CuO(10Å)/Al2O3(10Å)] multi-layers ,and 1100℃ annealed samples under argon ambience in order to get CuAlO2 thin films. The second work we deposited [CuO(10 Å)/Fe2O3(1Å、3 Å)/Al2O3(10 Å)] multi-layers ,and 1100℃ annealed samples under argon ambience .The structural ,electrical ,and magnetic properties of annealed samples have been investigated.
The ferromagnetism of [CuO(10 Å)/Fe2O3(1 Å、3 Å)/Al2O3(10 Å)] increased after 400℃ annealing under oxygen ambience but decreased under argon ambience. The results suggest that ferromagnetism in [CuO(10 Å)/Fe2O3(1 Å、3 Å)/Al2O3(10Å)] comes from an intrinsic factor highly correlated to defects. We will go on studying to find the origin of ferromagnetism exactly.

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