在本碩論中，我們致力於研究鋰化氟對於五環素薄膜電晶體的影響。在此，氟化鋰用來增加電晶體的載子注入。我們蒸鍍氟化鋰於不同位置中探討其結果。當我們將之成膜於閘極電極與介電層間，發現汲極電流明顯的增加。並且實現此架構於軟性塑膠基板上，而最大飽和電流從7.5µA增加至 22µA。
其次，高透明有機薄膜電晶體亦成功的製作。在可見光範圍內的平均穿透率高達71.2%。高透明電晶體具有容易與有機發光二極體整合的優點。並藉著蒸鍍氟化鋰來改善電晶體特性，且當氟化鋰厚度為1nm時可達到最大電流。當我們將1nm 氟化鋰成膜於汲極/源極電極時，最大的飽和電流可從1.1µA 增加至 2.58µA。
此外，我們使用導電高分子—聚苯胺 (polyaniline) 做為電晶體的主動層並藉著摻雜樟腦磺酸(CSA)增進聚苯胺的導電性及其溶解度，另外藉著摻雜-去摻雜的原理來改變聚苯胺的導電度，使之導電性，從半導體範圍到絕緣體範圍，並由此來控制電晶體的開關，達到電晶體特性。

The effects of thin lithium fluoride (LiF) insulating layer in pentacene-based organic thin film transistors (OTFT) are studied. The LiF thin film has been used improve the efficiency of the carrier injection. The pentacene-based OTFT with inserted LiF thin layer on different positions was fabricated. The performance of drain current is obviously enhanced while LiF is inserted between gate electrode and dielectric layer in OTFTs. Here, we carry out the structure on the plastic substrate, and the maximum saturation current increases from 7.5µA to 22µA.
Furthermore, highly transparent OTFTs based on pentacene have been demonstrated. The average transmittance is as high as 71.2% in the visible region. Highly transparent OTFTs have the advantage to easily integrate with OLED in display system. By inserting thin LiF film, enhancing the drain current were obtained. The optimum thickness of LiF film (1 nm) to achieve the maximum saturation current is investigated. The maximum saturation current increases from 1.1µA to 2.58µA while we insert 1nm LiF film between ITO (Source/Drain) and pentacene.
Additionally, we use conducting polymer, polyaniline (PANI), as active layer in the device. The CSA is used to improve electrical conductivity of polyaniline and its solubility. By doping-dedoping, we control of the electrical conductivity from semiconductor to insulator to attain the transistor characteristics.

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