本研究主要目的為使用反應式磁控濺鍍法，製備一系列不同性質的TiNxOy薄膜，在使用單一金屬鈦靶材下，透過不同的製程參數我們可以得到元素組成比、薄膜結晶度截然不同的TiNxOy膜層，以適當的條件堆疊三層膜結構後，搭配SiO2表面抗反射層的添加，以期能藉由此多層選擇性吸收塗層達到符合經濟效益的高太陽能吸收率與低熱放射率，並希望在高溫(400~800°C)的情況下能繼續維持其高效能。因此我們也對膜層進行不同溫度條件的高溫熱處理，探討其結構與性能受溫度影響的程度。
本論文結果與討論分為二大部分，第一部份主要是探討不同製程參數對濺鍍單層TiNxOy薄膜的影響，找出其適當的參數組合後再進行不同溫度的熱處理，分析與比較其結果。首先我們以X光光電子能譜儀(XPS)分析試片表面的化學元素組成，發現在雙反應氣體(N2+O2)濺鍍下我們的薄膜氧含量普遍都偏高，而在只通入氮氣作為反應氣體時，卻可以穩定的鍍出具不同氮氧比例之TiNxOy薄膜。X光繞射儀(XRD)則用來分析薄膜的結晶結構，結果顯示大部分的薄膜都有TiN繞射峰的存在，且其優選方向會因濺射粒子能量以及薄膜組成而有所改變。在場發射掃描式顯微鏡(FE-SEM)的觀察下，薄膜在不同製程條件下呈現截然不同的表面形貌，且隨著薄膜氮含量的增加，薄膜由顆粒狀非晶結構漸漸轉變為明顯柱狀晶結構。在薄膜光學性質的分析上，我們透過紫外光/可見光/近紅外光分光光譜儀(UV/vis/NIR Spectrometer)量測其穿透率以及反射率，並透過公式得到薄膜吸收度及消光係數等資訊，發現大部分的試片表現出自由載子的吸收效應，是為TiN顆粒表面電漿子共振所造成的影響。而在經過熱處理後的TiNxOy及TiNx膜皆有程度不一的氧化現象發生，因此其光學性質與結晶結構產生明顯的變化。
第二部分則是將決定好的膜層以SS substrate / TiNx / TiNxOy / N-doped TiO2 / SiO2的方式堆疊，透過分光光譜儀與傅立葉轉換紅外光光譜儀(FTIR)量測與計算多層膜的太陽能吸收率以及熱放射率，結果顯示TiNx層可以有效的降低基板放射率，為紅外光反射層；TiNxOy層大幅提高了吸收率，作為主要吸收層；N-doped TiO2層與SiO2層則更進一步的降低膜層整體的介面反射率。而多層膜在經過退火測試後，各膜層介面已明顯有擴散的發生，且結晶結構也因為高溫氧化而產生改變，其中在800°C下，膜層表面還出現嚴重的劣化，導致其光學上的表現大幅衰退。

In this work, a series of TiNxOy films have been investigated for used as solar selective absorbers due to their remarkable optical, mechanical, and electronic properties. The films were deposited using a reactive magnetron sputtering technique. A pure titanium target was used and the deposition took place under different processing parameters. The obtained TiNxOy was then coated with an anti-reflection layer, consisting of metal or non-metal oxides with desirable refractive index. The TiNxOy films and the resulting multilayer coatings were analyzed for the material characteristics. Effects of the material characteristics on the optical performance is presented and discussed.

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