中文摘要
在本文中，將對於氮化鎵(GaN)的反應式離子蝕刻(RIE)的四個重要參數：腔體壓力、蝕刻功率、反應氣體流量與種類，作一系列的整理與分析。可以發現到腔體壓力為控制蝕刻平坦度與均勻度的主控因素，而蝕刻功率則為蝕刻速率的重要參數。此外，在低流量的三氯化硼可以擁有比較高的蝕刻速率，在腔體壓力為50 mtorr，蝕刻功率為200瓦，三氯化硼硫量為5sccm下可以達到100nm/min。
利用光激光譜( PL )及傳輸線模型( TLM )量測，可以發現在高瓦數的蝕刻會伴隨來表面缺陷，其特徵接觸電阻(Specific contact resistance)由2.17×10-5提高到3.79×10-3Ω-cm2，而其發光強度也會隨著蝕刻瓦數的增加而降低。然而，在經過900℃熱回火5分鐘與光輔助化學濕式蝕刻處理後其特徵接觸電組可以改善分別為9.84×10-5與3.41×10-4Ω-cm2。

Abstract
In this dissertation, we compare the four important parameters (pressure, etched power, flow rate of reactive gas, BCl3) for RIE (Reactive Ion Etching), and analyze the influence of these parameters on etched rate and smooth etched profiles.
We detected that pressure is the most important parameter for the smooth etched profiles, and the etched power is for the etched rate. In addition, the low flow rate of BCl3 induces a high etched rate. For the system operated at 50 mtorr and 200 watts, the hightest etch rate of 151 nm/min was found by adjusting BCl3 flow rate to 5 sccm.
The ion-bombardment induced surface damage with high etched power plasma was surveyed in detail by PL measurement and TLM. The specific contact resistance was noted to increase from 2.17×10-5 to 3..79×10-3Ω-cm2, and the PL peak intensity decreased with higher etch power. In addition, we performed damage recovery with RTA at 900 ℃ for 5 minutes and PEC process to improve the surface dislocation. After the damage recovery process, PL peak intensity was effectively enhanced, and the specific contact resistance improved to 9.84×10-5Ω-cm2 with the RTA at 900 ℃ for 5 minutes, and 3.41×10-4Ω-cm2 with PEC process.

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