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研究生： 張庭禎
Chang, Ting-Chen
論文名稱： Mo6+和W6+陽離子摻雜對 鉍鐠鈦薄膜鐵電性質之影響
Effects of M6+ and W6+ doping on the Ferroelectric properties of (Bi,Pr)4Ti3O12Films
指導教授： 林文台
Lin, Wen-Tai
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2004
畢業學年度： 92
語文別： 中文
論文頁數： 93
中文關鍵詞： 鐵電材料 、鐠
外文關鍵詞： sputter, Ferroelectric
相關次數： 點閱：67  下載：1 
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    • 　　本實驗探討退火製程與摻雜Mo、W濃度對濺鍍(sputter)成長Bi4-XPrXTi3O12（BPT）薄膜之微結構與電性的影響。BPT薄膜之Pr濃度在X=0.24~0.58經750℃退火後，於240kV/cm電場強度的殘留極化2Pr為17~22μC/cm2。其中Bi3.55Pr0.48Ti3O12薄膜有最大2Pr值，22μC/cm2，此乃因為Pr之取代Bi以及晶粒大小兩效應互相競爭的結果。在先退火625℃後鍍上電極再退火到750℃的兩階段退火製程，和鍍完上電極再退火750℃的製程相比，前者有較大2Pr值與介電常數及較低的漏電流。原因是其Pt上電極與薄膜間的介面反應前者較後者輕微。在BPTMz和BPTWz薄膜中，M及W摻雜量z=0.01時有最大2Pr，當z大於0.03時2Pr則會下降。BPT薄膜中摻雜Mo6+、W6+會同時產生兩個效應，即減少氧空缺及使晶粒變小。前者會導致2Pr的增加而後者則會減少2Pr。

    　　Effects of the annealing process and Mo- and W-doping as a function of the dopant concentration on the microstructures and ferroelectricity of sputter-deposited Bi4-xPrxTi3O12 (BPT) films on Pt/SiO2/Si(100) were studied. The remanent polarization (2Pr) Of 750℃ -annealed BPT films with the Pr concentration (x) in the range of 0.24-0.58 were around 17-22μC/cm2 at 280kV/cm. The Bi3.55Pi0.48Ti3Oy films showing the largest 2Pr can be ascribed to the result of competition between the two effects, i.e., Pr substitution and the grain size. The BPT films subjected to two-step annealing, i.e., first annealed at 625℃before Pt deposition and then annealed at 750℃ after Pt deposition, showed the larger 2Pr and dielectric constant and the lower leakage current as compared with the BPT films subjected to 750℃ annealing after Pt deposition. The cause may be ascribed to the less interfacial reactions between the upper Pt electrode and the BPT film for the two-step annealing than for the 750℃ annealing. For the Mo-doped BPT (BPTMz) and W-dpoed BPT (BPTWz) films the 2Pr was significantly improved with the dopant concentration (z) of 0.01,while it became degraded with the z larger than 0.03. The doping of Mo6+ and W6+ into the BPT films can simultaneously induce two contrary effects on the 2Pr, i.e., reducing the amount of oxygen vacancies and decreasing the grain size, which result in the improvement and degradation of the 2Pr, respectively.

    本 文 目 錄 中 文 摘 要 ······················Ⅰ 英 文 摘 要 ······················Ⅱ 誌 謝 感 言 ······················Ⅲ 本 文 目 錄 ······················Ⅳ 表 目 錄 ·······················Ⅵ 圖 目 錄 ·······················Ⅵ 本 文 第一章 簡 介 1 . 前 言 1 - 1 . 電子記憶體··················1 1 - 2 . 鐵電材料···················1 第二章 鐵電薄膜材料的發展與基本理論 1 . 鐵電薄膜材料的發展 1 - 1 . PZT鐵電薄膜·················7 1 - 2 . SBT鐵電薄膜·················8 1 - 3 . BTO與BLT鐵電薄膜············· 9 2 . 基 本 理 論 2 - 1 . 極化原理 ················· 12 2 – 2 . 脈衝極化及疲勞量測原理 ··········16 2 - 3 . 鐵電記憶體的讀寫原理 ············17 2 - 4 . 鐵電材料之基本結構 ·············19 第三章 儀 器 操 作 原 理 1 . 濺鍍沉積原理 ·················21 2 . 射頻（RF）濺鍍法 ···············23 3 . 電子槍蒸鍍系統 ················ 25 4. 實驗研究動機 - BPT、BPTM、BPTW 鐵電薄膜 ·· 26 5 . 實 驗 步 驟 與 方 法 ············· 29 a . 實驗流程圖 ··············· 29 b . 粉末配置與靶材燒結 ··········· 30 c . 基板（底電極）Pt/Ta/SiO2/Si製備-電子槍蒸鍍 ···················30 d . BPT（W；Mo）鐵電薄膜製備–射頻濺鍍系統 · 31 e . 上電極製作–電子槍蒸鍍系統 ······· 31 f . 退火–管型爐 ·············· 31 g . 鐵電性質量測與分析 ··········· 32 g - 1 . 結晶相鑑定 – XRD ········· 32 g - 2 . 成分分析– RBS ··········· 33 g - 3 . 薄膜厚度測定 – α- Step ······ 35 g - 4 . 遲滯曲線（P- E loop）量測–RT66A鐵電性質量測系統 ············· 35 g – 5 . 漏電流量測·············36 g – 6 . 觀察表面顯微組織（掃描式電子顯微鏡SEM） ·············· 36 g – 7 . 觀察薄膜內部結構 （穿透式電子顯微鏡TEM） ·············· 36 g – 8 . 觀察薄膜的化學組成（化學分析電子光譜儀ESCA） ·············· 36 第四章 結果與討論 1 . 膜厚量測 · ····················· 38 2 . 摻雜不同Pr含量對BPT膜殘餘極化量(2Pr)的影響····· 38 3.不同退火製程對BPTMx及BPTWx 薄膜2Pr及介電常數的影響 ··························40 4 . 摻雜不同Mo(x)含量對BPTMX薄膜2Pr的影響······ 41 5 . 摻雜不同W(x)含量對BPTWX薄膜2Pr的影響 ······ 43 第五章 結論 參考文獻·······················47

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