本篇論文使用氫化物氣相磊晶沈積法(Hydride Vapor Phase Epitaxy：HVPE) 和磊晶側向成長法(Epitaxial Lateral Overgrowth： ELO) 沉積在點狀和條狀的圖案化藍寶石基板(Patterned Sapphire Substrate：PSS)成長GaN晶體和厚膜(大於100 μm)，調變參數控制不同的磊晶溫度(825℃ ~ 1050 ℃)和不同的載氣氣氛比例(H2, N2 和 N2/H2)。
本研究中發現，在H2載氣氣氛下，我們觀察到GaN晶體會有高溫成長模式(HT-Growth mode)和低溫成核模式(LT-nucleation mode)的現象。在850 ℃時，我們發現有異於高溫形成的六面柱體的特別型式的六面柱體生成。此外，使用低溫(850 ℃ ~900 ℃)和高溫(950 ℃ ~ 1050 ℃)兩階段成長法，可以控制 和 {1-101} 晶面成長速率，使穿晶差排彎折以降低穿晶差排密度和增加薄膜生長速率。使用不同的載氣氣氛比例(H2, N2, N2/H2)，有相同的效果可以控制 和 {1-101} 晶面成長速率，以降低穿晶差排密度，獲得高品質的磊晶薄膜。
我們使用掃描式電子顯微鏡(Scanning Electron Microscopy : SEM)來觀察樣品的表面形態。另外對於本身材料的發光特性，我們採用陰極激發光(Cathodoluminescence ： CL)和 拉曼光譜 (Raman spectroscopy)的方式來確定其發光波長位置和局部的應變分佈。為了能深入觀察差排在GaN厚膜裡的分佈範圍，我們以穿透式電子顯微鏡（Transmission Electron Microscopy：TEM）進行分析。最後為了確定GaN厚膜品質，我們利用 X-ray 分析其半高寬寬度(Full Width Half Maximum：FWHM)。

In this dissertation, the hydride vapor phase epitaxy (HVPE) process and epitaxial lateral overgrowth (ELO) method were adopted to deposit the GaN thick films ( > 100 μm ) on patterned sapphire substrate (PSS) with control the growth temperatures in the range of 825 ℃ ~ 1050 ℃ and different carrier gas ratios (i.e. H2, N2, and N2/H2 ).
The high temperature growth mode and low temperature nucleation mode were studied using H2 as a carrier gas. It is found that the formation mechanism of special GaN hexagonal columns at the low temperature of 850 ℃ is different from that of the high temperature GaN columns. Besides, the two step-growth method (i.e. low temperature from 850 ℃ to 900 ℃ and high temperature from 950 ℃ to 1050 ℃) is performed to control the growth rate of (0001) and {1-101} facets to reduce dislocation density by bending the threading dislocations and to increase thick film growth rate. Similar results by varying different carrier gas ratios (i.e. H2, N2, and N2/H2) are also shown to be effective in producing high quality thick epitaxial films with low threading dislocation density.
The scanning electron microscopy (SEM) analysis was examined to observe the surface morphologies of GaN samples. The cathodoluminescence (CL) and Raman spectroscopy analyses were examined to detect luminescent spectra and local strain distribution, which can be associated with threading dislocation distribution by transmission electron microscopy (TEM) observation. X-ray rocking curves were examined to estimate GaN epitaxial quality and revealed that GaN samples grown in N2/H2 (147 arsec)or H2 (728 arsec) carrier gas are better than that grown in N2 (2913 arsec) carrier gas.

第一章
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第三章
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第四章
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第五章
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第六章
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第七章
[1] V. Wagner, O. Parillaud, H. J. Bu¨hlmann, M. Ilegems, S. Gradečak, P. Stadelmann, T. Riemann and J. Christen,” Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaNby hydride vapor phase epitaxy”, J. Appl. Phys. 92, 1307 (2002).
[2] H. Miyake, S. Bohyama, M. Fukui, K. Hiramatsu, Y. Iyechika, and T. Maeda, ”Carrier-gas dependence of ELO GaN grown by hydride VPE”, J. Cryst. Growh, 237-239, 1055 (2002).
[3] B.D. Cullity, “Elements of X-Ray Diffraction”, 2th edition. p.501, Addison- Wesley (1978).