本研究利用3-Mercapto-propyl-tri-methoxy silane (MPTMS)單分子膜來修飾TiO2，再以連續離子吸附反應成膜法(Successive Ionic Layer Adsorption and Reaction,SILAR)將硫化鎘組裝至TiO2薄膜表面，以作為TiO2光電極的光敏化劑，並應用於半導體敏化太陽能電池。結果發現利用七次循環沉積的SILAR程序將Cd2+及S2-濃度控制在0.05M及0.5M來沉積CdS，可以得到最佳的光電轉化效率(1.08%)。由紫外光-可見光吸收光譜圖發現經過MPTMS 修飾過的TiO2表面對CdS 成長有抑制作用，此一作用可避免在高次數SILAR沉積時， CdS的聚集現象所導致元件效能下降。MPTMS改質過的TiO2電極有較小的暗電流，顯示此一改質作用可避免裸露的TiO2表面與電解液直接接觸，降低TiO2上的光電子與電解液間的電荷再結合(charge recombination)現象。因此MPTMS改質的電極有較大的填充因子(fill factor)。最後以300℃對TiO2/MPTMS/CdS(7)光電極進行熱處理可提昇CdS的結晶性，並減少光電極界面的缺陷，有效提高光電流，使TiO2/MPTMS/CdS(7)光電極的效率再提升至1.37%。

In this study, Self-assembly monolayer (SAM), 3-mercaptopropyl-trimethyoxysilane (MPTMS) is utilized for TiO2 surface modification, following successive ionic layer adsorption and reaction procedure (SILAR), CdS is in-situ grown onto TiO2 surface as the sensitizer for semiconductor-sensitized solar cell application.
By controlling the ion solution concentration at 0.05M and 0.5M for Cd2+and S2-, respectively, the optimal photoelectrical conversion efficiency 1.08% can be achieved at the seventh deposition layer in SILAR procedure. From the UV-Vis absorption spectra, MPTMS on TiO2 surface would inhibit CdS growth, and prevent CdS particle aggregation at higher deposition cycle, which would cause performance declining. On the other hand, MPTMS-modified TiO2 electrodes reveal the lower dark current, implying introduction of surface modification would reduce the charge recombination through the bare TiO2 surface to oxidate species in electrolyte. Therefore, MPTMS-SAM modified electrode possess higher fill factor.
Finally 300℃ heat treatment for TiO2/MPTMS/CdS(7) photoelectrodes could increase the crystallinity of CdS and eliminate the defect in TiO2/CdS interface for improving efficiency to 1.37% by increasing photocurrent.

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