本研究的主要目的在於設計、製造與測試新式三極導電原子力顯微鏡探針。此三極導電探針具備奈米級掃描及定位之能力，可藉由控制電流流經之路徑以量測顯微組織 (晶界、晶粒、奈米級電子元件…等) 的電性。
本研究利用微機電系統製程製作三極導電探針，探針針長約為3.5 μm，而針尖的曲率半徑則在30～50 nm之間與一般商用探針相當。另外，三極導電探針俱備兩間距為13～20 μm 的導電針尖，可跨接於顯微組織上控制電流之路徑，以量測此顯微組織的電性。並在探針的製程中加入絕緣溝槽的設計，讓三極導電探針於濺鍍導電鍍層後各電極間能夠自然絕緣，減少使用光罩的數量，降低探針製作成本與製程複雜度。
三極導電探針製作完成後，我們將其用於變異鏈球菌 (Streptococcus mutans)、聚左乳酸 (poly L-lactic acid) 與氧化鋁燒結塊材表面形貌的掃描，配合矽晶圓表面的氧化加工與電性分析，測試此探針表面形貌掃描、加工及電性量測等三項主要功能。測試結果，在表面形貌的掃瞄的測試上，取得一般商用探針接近的結果。而在氧化加工的測試，成功的利用此三極導電探針在矽晶圓表面生成長度約為15 μm的線狀氧化層，並以此探針通以直流偏壓量測探針、氧化層與矽基板所形成的MOS與MOSOM結構的Fowler - Nordheim穿隧電流，由此穿隧電流可計算其穿隧能障。在MOS結構中，當氧化層厚度在15～2.2 nm之間時其能障約為0.4~1.8 eV，隨厚度增加而下降。而在MOSOM結構中，當氧化層厚度為3 nm時，穿隧能障約為2.63 eV。透過穿隧電流的量測能夠證實此探針可用於奈米級電子元件的電性量測。
另外，此三極導電探針能夠裝載於一般常見的AFM機台，期望藉此降低三極導電探針量測分析技術使用之門檻，可更容易的將此技術推廣至其他研究領域；如生物電性分析、離子電池電化學分析、陶瓷燒結機構探討等。

In this study a three-electrode conductive atomic force microscope probe (CAFM) was made. Based on the original abilities, surface scanning and nanoscale localization, of AFM probe, a nanoscale feature could be found, and the extra two probes on the three-electrode probe could be used to measure the electrical properties by controlling the current path.
Finite element analysis software, ABAQUS and Intellisuite, were conducted to design the mechanical performance and the fabrication process. Three-electrode CAFM probes were manufactured by micro electro mechanical system process. On the three-electrode probe a 3.5 μm height tip was made with a radius of curvature 30～50 nm, and two of the tips were set apart in 13～20 μm. An insulation trench was also designed on the probe to insulate the tips from one to another. The design of the insulation trench can not only reduce the use of the photomask, but also lower the costs and simplify the fabrication process
The electrode probe was used to do the local anodic oxidation on a silicon wafer, and a MOS and MOSOM structure were formed of the tips, silicon oxide, and silicon. The Fowler-Nordheim tunneling (F-N tunneling) current was measured by applying a DC bias to MOS and MOSOM structures. The tunneling barriers of the MOS were within the range of 0.4 to 1.8 eV with the oxide thickness from 15 nm to 2.2 nm And in the MOSOM structure, the tunneling barrier is about 2.63 eV with the oxide thickness 3 nm. Through these tests, we could prove that the three-electrode probe had the functions of scanning, nano machining and electrical measuring.
Furthermore, the size of the three-electrode probe was the same as general commercial probes so that the probe could be operated in commercial AFM. With this design, we expected that we could simplify the three-electrode measurement process, and applied this measured technique to other research category; for instance, bioelectrical analysis, electrochemical analysis of ion battery and study of ceramic sintered mechanism.

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