過去鑽石成核的方法與技術很多，但大多需要鑽石種晶當作成核點。即便是成核在損毀的粗糙基板，也是用鑽石顆粒摩擦，或是藉由超音波震盪奈米鑽石溶液，讓鑽石顆粒在基板上製造凹凸不平的表面，並鑲嵌鑽石種晶在上面。然而，鑽石顆粒成本高且奈米鑽石溶液難以取得。本實驗初期使用濕蝕刻技術製造粗糙基板，搭配碳化物中間層，結合兩種鑽石成核技術與方法，使鑽石異質成核於基板。儘管鑽石只出現在容易形成碳化鎢的位置，也就是基板的是相對高處，導致成核密度低。過程中，發現鎢搭配金屬銅，讓石墨烯沉積於銅上，得以讓鑽石成核於鎢與石墨烯交界面。隨著製程時間拉長，鑽石薄膜逐漸擴張，覆蓋銅並延伸到鎢。於是後期，讓鎢、銅與石墨烯同時出現在粗糙基板，試圖讓鑽石成核於整塊基板，不受基板上地形與海拔高度的影響。石墨烯的沉積與鑽石的成核、成長，三道製程用微波電漿化學氣象沉積法一氣呵成，使得鑽石除了在山脊成核，地勢相對較低的山腰與山谷也可以發現鑽石的蹤跡。如此一來，鑽石成核密度便提升。

關鍵字: 鑽石成核、成核於中間層、成核於粗糙表面、異質成核、微波電漿化學氣象沉積

In the past, there were many methods and techniques for diamond nucleation, but most of them required diamond seed crystals as nucleation points. Even if the nucleation is on the damaged rough substrate, the diamond particles create rough surface on the substrate, and the diamond seed crystals are embedded on it. In the early stage of this experiment, the rough substrate was created using wet etching technology with a carbide intermediate layer to make diamonds heterogeneous nucleation on the substrate. During the process, it was discovered that tungsten and copper allow graphene to be deposited on allows diamonds to nucleate at the interface of tungsten and graphene grown on copper. As the process time lengthens, the diamond film gradually expands. In the later stage, tungsten, copper and graphene were allowed to appear on the rough substrate at the same time, trying to make the diamond nucleate on the whole substrate without being affected by the terrain and altitude on the substrate.

Keywords: diamond nucleation, interlayer driven nucleation, nucleation on rough surfaces, heterogeneous nucleation, microwave plasma chemical vapor deposition

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