以射頻濺鍍法生長(Bi,La)4Ti3O12(BLT)及BLT(BLTVx)膜探討鍍膜時的O2和Ar的流量比、緩衝層Bi2O3和離子佈植的鐵電性及微結構。當BLTV0.03的2Pr在流量比1:1前隨著氧流量的增加因為氧缺陷降低而增加。然後隨著流量比至1.5:1時會因為晶粒尺寸的變小而急遽的下降。當V添加量在0.03-0.07時，其殘餘極化量會較BLT之2Pr大，且在0.15時會有大量的降低。2Pr的上升是因為氧空缺的減少釘札效應，V=0.15是因為晶格扭曲降低使殘餘極化降低。Bi2O3緩衝層會降低BLT及BLTV0.03膜的成長溫度。是因為Bi2O3扮演著模板的角色，以及(0 0 1)BLT/Pt具有較低的界面能使得成長溫度降低。BLT及BLTV0.03膜的2Pr會隨著摻雜P+和BF2+劑量的增加而降低，是因為劑量增加晶粒尺寸變小使得釘札效應發生，降低殘餘極化量。

Effects of O2/Ar ratio, buffered Bi2O3 layers, and ion implantation on the ferroelectricity and microstructures of (Bi,La)4Ti3O12(BLT) and V-doped BLT(BLTVx) films deposited by radio-frequency sputtering were studied. The remanent polarization(2Pr) of BLTV0.03 films increased with the O2/Ar ration up to 1:1.5 and 1:1 and then decreased with the ratio layer than 1.5:1 due to the reduction of grain size. The BLTVx films with the V concentration in the range of x=0.03-0.07 owned the 2Pr large than that of BLT films, whereas the 2Pr of BLTV0.15 films dropped rapidly because reduction of lattice distortion V doping induced two contrary effect on 2Pr, i. e., reducing the amount of oxygen vacancies and causing less structure distortion. The buffered Bi2O3 layers enhanced the c-axis-oriented growth of BLT and BLTVx films, reducing the temperature for c-axis-oriented growth from 900 to 600℃. The cause can be attributed to the template effect of Bi2O3 and the lower interfacial energy of (001)BLT/Pt . The 2Pr of P+- and BF2+- implanted BLT and BLTVx films decreased with the ion dose in the range of 1-5x1015/cm2. The reduction of grain size induced by the ion implantation can enhance the domain pinning effect and thus reduce the remanent polarization.

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