本論文主要分為兩部分，第一部份我們使用新穎的橘紅光染料10-(4-Dimethylamino-phenylethynyl)-anthracene-9-carbonitrile(DMAPEAC)來製作OLED元件，藉由吸收光譜與PL光譜的分析選擇合適的主體進行摻雜，並分析摻雜元件效能上的改善與EL光譜的變化，結果證實DMAPEAC與選擇的主體材料Alq3之間有不錯的能量轉移行為。此外由Alq3:DMAPEAC共摻雜薄膜的PL與吸收光譜分析發現630nm有一excimer的特性峰，其強度隨著摻雜濃度提高而增強。當元件在DMAPEAC 1 wt%的摻雜濃度下，元件在電流密度560 mA/cm2操作下有最大亮度19400 cd/m2 (16V)，電流效率與功率效率分別為3.09 cd/A和1.94 lm/w。由單一電洞載子元件(ITO/Alq3:DMAPEAC/Au)和單一電子載子元件(Al/Alq3:DMAPEAC/LiF/Al)的I-V特性圖分析發現，當DMAPEAC摻雜進入Alq3會造成通過元件的電流密度下降，證實了DMAPEAC在Alq3是一載子捕捉中心。

　　第二部分是利用4,4‘-bis(2,2-diphenyl-ethen-1-yl)-diphenyl (DPVBi)為主發光層，Alq3: DMAPEAC共鍍層為輔發光層製作雙發光層白光OLED，實驗結果發現電洞阻擋層BPhen的厚度、DMAPEAC的摻雜濃度和共鍍層的位置會影響載子複合發光的區域，當元件結構為ITO/m-MTDATA(5nm)/TPD(20nm)/DPVBi(50nm)/BPhen(12nm)/
Alq3:DMAPEAC(14nm,1 wt%)/LiF/Al時，元件最大亮度為2880 cd/m2，電流效率與功率效率分別為1.5 cd/A和0.4 lm/w，當驅動電壓由依序為12V、15V、18V和21V時，對應的CIE座標分別為(0.27, 0.23)、(0.29, 0.26)、(0.31, 0.27)和(0.33, 0.30)，皆位於白光區域。最後我們進行上陰極發光白光OLED製作，當陰極結構為Al(10nm)/Ag(15nm)時，能使元件有最佳的亮度與效率，但此複合式陰極有很強的光學干涉效應導致可見光穿透度大幅衰減，而陽極材料使用Au和Ni時，實驗結果發現以Au為陽極有較好的元件特性，元件的起使電壓分別為4V與7.6V，此乃由於Au的功函數高於Ni，因此有較小的電洞注入能障。

　　最後我們製作上陰極發光白光OLED，元件結構為Au/m-MTDATA(5nm)/TPD(20nm)/Alq3:DMAPEAC(2nm,1wt%)/DPVBi
(50nm)/LiF/Al，此時光色CIE座標為(0.42, 0.31)，位於白光區域的邊緣，元件在電流密度263 mA/cm2時有最大亮度121 cd/m2，而最大電流與功率效率分別為0.25 cd/A和0.1 lm/w，上發光白光元件效能不如下發光白光元件的原因可能是元件的載子注入能力不佳，還有半透明金屬膜的穿透度(約30%)遠不如下發光元件的ITO陽極(約80%)，導致發出的光無法由電極穿透。

　　This subject is divided into two parts. The first is fabrication of orange/red organic light emitting devices (OLEDs) by employing an novel ethyne-based fluorescent dye, namely 10-(4-Dimethylamino-phenylethynyl)-
anthracene-9-carbonitrile (DMAPEAC). The photoluminescence (PL) of DMAPEAC dispersed in methylene chloride were measured to be 600 nm. On the other hand, PL spectra for DMAPEAC doped Tris(8-hydroxyquinoline) aluminum(Alq3) film exhibited two peaks at 600nm and 630nm. Therefore, the extra PL peak at 630 nm was shown to be due to the excimer formation by absorption and PL measurement. From optics property analysis, we found that DMAPEAC doped into Alq3 have good Förster energy transfer. When device structure is ITO/TPD(15nm)/Alq3:DMAPEAC(50nm,1wt%)/BPhen(10nm)/LiF/Al, maximum brightness of 19,400 cd/m2 and current efficiency of 3.09 cd/A was obtained. By measuring I-V characteristics for hole only and electron only device, the result confirmed that DMAPEAC dispersed in Alq3 was center of carrier trapping.

　　The second is fabrication of white OLED with double emission zone consisted of 4,4‘-bis(2,2-diphenyl-ethen-1-yl)-diphenyl (DPVBi) and DMAPEAC doped Alq3 film. Carriers recombination zone was influenced by thickness of hole blocking layer, doping concentration of DMAPEAC and position of doping film. When device is ITO/m-MTDATA(5nm)/
TPD(20nm)/DPVBi(50nm)/BPhen(12nm)/Alq3:DMAPEAC(14nm,1wt%)/LiF/Al, maximum brightness of 2880 cd/m2 was obtained at 18.9V, maximum current and power efficiency was 1.5 cd/A and 0.4 lm/w, respectively. When driving voltage varied from 12V to 21V, the Commission Internationale de l'clairage (CIE) coordinates was changed from (0.27, 0.23) to (0.33, 0.30).

　　Finally we tried to design top emitting white OLED, top emitting OLED with Al/Ag cathode had much amount of electron compared with pure Al or Ag cathode. But transparency dramatically decreased due to strong interference effect. Au and Ni had high work function was utilized as bottom anode for top cathode OLED. OLED with Au anode exhibited better performance than Ni anode due to Au with higher work function and decreased hole injection barrier. When device structure was Au(80nm)/m-MTDATA(5nm)/TPD(15nm)/Alq3:DMAPEAC(2nm,1wt%)/DPVBi(50nm)/LiF/Al(25nm)，CIE coordinates was (0.42, 0.32) near white region. Beside, maximum current and power efficiency for device was 0.25 cd/A and 0.1 lm/w, respectively. Performance of top emitting white OLED was poorer compared with bottom emitting white OLED due to poorer ability of carriers injection and less transparency for electrode.

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