近年來，具備穿戴式消費電子顯示器已經非常流行，以及高電流驅動薄膜電晶體（TFT）在大面板中至關重要，閘極驅動陣列電路和主動矩陣微發光二極體（AM-μLED）皆在未來智慧型手機技術應用。因此，有必要提高薄膜電晶體的性能和可靠度，隨著對薄膜電晶體遷移率需求不斷的增加，其中較高電子遷移率的非晶態銦鎵鋅氧（a-InGaZnO）在主動層材料中比非晶矽（a-Si:H）變得更受歡迎。另外，非晶銦鎵鋅氧化物具寬能隙特性不易受電場產生能帶間穿隧效應，因此，它具有較低的漏電流。而本論文中頂閘極a-InGaZnO具有高遷移率和較低的漏電流，可以滿足該要求，這些優勢使a-InGaZnO 成為新一代顯示面板應用最有希望的候選者之一。
本論文首先介紹傳統低溫多晶矽多晶矽薄膜電晶體（LTPS TFT）的ID-VD電特性中的扭結效應現象的出現。在熱載子應力下，通道在汲極附近產生碰撞游離生成電子-電洞對，接著，電子被汲極負電場排到源極引起本體效應，從而降低了源極能障。此外，發現雙閘極結構的LTPS可以抑制由HCS引起的電性能下降。 Silvaco TCAD模擬表明，在雙閘結構中，通道上下介面處產生電洞，並抑制了由本體效應所導致的退化。 因此，雙閘極LTPS TFT的使用可以促進顯示面板中的高電流驅動應用。
接著，在a-InGaZnO雙閘極薄膜電晶體研究中，將懸浮底閘（BG）做為薄膜電晶體中的光屏蔽層，卻觀察到異常的ID-VD¬輸出不飽和電流特性。另外，隨著漏
極電壓的增加，汲極引起的能障下降對ID-VD特性具有重大影響，這些現像是由於電容耦合效應引起的電位變化，從TCAD模擬可以很好的觀察到並加以解釋。接著，提出物理模型來驗證異常的電性特徵，發現將底閘光屏蔽層接地可更好地控制臨界電壓和總體電流性能。
在第三部分中，應用於大型顯示器的薄膜電晶體的質量和穩定性對於其成功的製造和商業應用至關重要。這項研究介紹了一種薄膜電晶體製造工藝，其中，通過在頂閘a-InGaZnO的介電層中摻雜氫來定義源極/汲極。存在與該元件有關的尺寸效應，其中較長的通道允許更多的氫擴散到通道的中心。對於較短的通道，這將導致較低的能障和臨界電壓漂移，並提出了物理機制模型來驗證由氫擴散到頂閘a-InGaZnO薄膜電晶體中引起的異常電特性。
在第四部分中，研究了頂閘a-InGaZnO薄膜電晶體在自熱效應下氫擴散引起的劣化機制。 由於a-InGaZnO的散熱係數小於周圍絕緣體的散熱係數，因此，在高工作電流下，通道中會發生焦耳熱，源極/汲極n+ a-InGaZnO中的氫會擴散到通道中，從而使臨界電壓（VTH）向負方向漂移。此外，如COMSOL模擬中所觀察到的，不均勻的通道熱效應會引起電氣特性的駝峰效應。自熱應力（SHS）操作下的氫擴散會降低有效通道長度和增加寄生電容。電容測量方法用於闡明這些異常現象的機理。最終，在200 K的低溫環境中以恆定電流消除了焦耳熱效應，從而確認劣化確實是由焦耳熱效應引起的。在第五部分中，在不相等的通道熱效應導致電特性的駝峰效應，並且著通道寬度的增加，自熱效應變得更加突出。為了在未來的顯示器應用中以大電流運行將這些異常現象的影響降至最低，使用了一種在通道寬度中創建分割結構的方法來幫助總體散熱並減少自熱應力帶來劣化的影響。
在第六部分中，研究了水分對a-InGaZnO薄電晶體電性的影響。在這種薄膜電晶體的商業應用中，在潮濕環境中的高穩定性和高質量性能是必不可少的。在環境濕度下的薄膜電晶體操作過程中，水分子的電解通過尖端電場效應發生。氫在負電場下從蝕刻終止層或背通道擴散到主通道中。氫原子充當淺施主（這會導致通道中的載流子濃度升高），從而導致臨界電壓（VTH）向負方向移動。由尖端電場引起的氫從源極/汲極與閘極的重疊處擴散到通道中心，導致短通道器件的能障降低和VTH漂移。但是，在環境濕度中的負偏應力（NBS）下，短通道的負VTH飄移量比長通道的元件更為顯著，這表明長通道器件中的氫擴散得到抑制。這歸因於在源極、汲極和閘電極處尖端電場對水的電解，導致氫擴散到通道的中心距離較長。在此，基於C-V測量中異常的出現，提出了一種在環境濕度下電容-電壓（C-V）電特性變化的新型物理模型。該模型解釋了由尖端電場引起的水電解和由氫擴散到a-InGaZnO主動層中引起的異常電性。二次離子質譜分析表明，在環境濕度下負偏應力下，通道中的氫含量增加，驗證了a-InGaZnO TFTs對於濕氣環境所引起的裂化行為。
在第七部分中，本研究介紹了一種循環退火技術，該技術可增強a-InGaZnO底閘結構薄膜電晶體（TFT）的可靠性。通過使用這種處理，可以有效地緩解閘極負偏壓照明應力（NBIS）引起的不穩定性。循環退火提供了幾個冷卻步驟，這些步驟是放熱過程，可以形成更強的離子鍵。另一個優點是總退火時間比使用傳統長期退火時要短得多。通過使用循環退火，可以有效地優化a-InGaZnO的可靠性，縮短工藝時間可以提高製造效率。

Recently, portable consumer electronic devices with displays have become very popular. High-current-drive thin-film transistors (TFTs) are essential in large-panel units, smart phones gate drive array circuits, and future applications of active-matrix micro-light-emitting diode (AM-μLED) technology. Therefore, it is necessary to improve the performance and reliability of TFTs. With the increasing demand for TFT mobility, amorphous indium gallium zinc oxide (a-InGaZnO) has become more popular than amorphous silicon (a-Si) in the active layer owing to its higher electron mobility. In addition, the wide band gap characteristics of a-InGaZnO are not easily affected by an electric field, making it difficult for band-to-band tunnel effect. Therefore, it has lower leakage current. This thesis the top gate a-InGaZnO has high mobility and lower leakage current, which meet that requirement. These advantages make a-InGaZnO one of the most promising candidates for a new generation of flat panel display applications.
This thesis first introduces traditional examines the appearance of a kink effect phenomenon in the ID-VD electrical characteristics of low-temperature polycrystalline Si thin-film transistors (LTPS TFTs). During hot-carrier stress, electron-hole pairs were generated in the channel near the drain terminal owing to impact ionization. Next, the electrons were repelled toward the source by the drain electric field, thereby inducing the floating body effect, which lowered the source barrier. In addition, a dual gate-structured LTPS was found to inhibit the electrical degradation caused by HCS. The Silvaco TCAD simulation indicated that in the dual-gate structure, holes at the upper and lower margins of the channel were inverted and inhibited the degradation caused by the floating body effect. Therefore, the use of dual-gate LTPS TFTs could facilitate high-current gate-on-array circuit applications in display panels.
Then in this a-InGaZnO dual gate TFTs study, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor. We observed abnormal ID-VD output characteristics and unsaturated current characteristics. Additionally, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Next, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the Bottom Gate light shield was found to provide better control over the threshold voltage and total current performance.
In the third part, the quality and stability of thin-film transistors applied to large-scale displays are crucial to their successful manufacture and commercial applicability. This study introduces a thin-film transistor manufacturing process in which the source/drain system is defined by hydrogen doping in the dielectric layer of the top-gate a-InGaZnO. A size effect related to this system exists where longer channels allow a greater amount of hydrogen to diffuse into the center of the channel. For shorter channels, this results in a lower energy barrier and a shift in the threshold voltage. A physical mechanism model is proposed to verify the abnormal electrical characteristics caused by hydrogen diffusion into the top-gate a- InGaZnO.
In the fourth part, the mechanism of hydrogen-diffusion-induced electrical degradation under the self-heating effect for a top-gate a-InGaZnO thin-film transistor is examined in this study. The heat dissipation coefficient of a-InGaZnO is smaller than that of the surrounding insulator. Therefore, Joule heating occurs in the channel under high operating currents, and hydrogen in the source/drain n+ a-InGaZnO diffuses into the channel to shift the threshold voltage (VTH) in the negative direction. In addition, the unequal channel thermal effect induces a hump effect in the electrical characteristics, as observed in COMSOL simulations. Finally, the Joule heating effect is eliminated in a low-temperature environment at 200 K with a constant current, confirming that the degradation is indeed caused by the Joule heating effect.
In the fifth part, the unequal channel thermal effect results in a hump effect in the electrical characteristics, and the self-heating effect becomes more prominent as the channel width increases. To minimize the effects of these abnormal phenomena under high current operation in future display applications, a method of creating structural divisions in the channel width is used to aid overall heat dissipation and reduce the effect of SHS degradation.
In the sixth part, the impact of moisture on the electrical characteristics of an a-InGaZnO thin-film transistor was investigated. In commercial applications of such TFTs, high stability and quality performance in humid environments are essential. During TFT operation under ambient moisture, the electrolysis of water molecules occurs via the tip electric field effect. Hydrogen diffuses from the etch-stop layer or back-channel into the main channel under a negative electric field. The hydrogen atoms act as shallow donors (which causes the carrier concentration in the channel to rise), causing the threshold voltage (VTH) to shift in the negative direction. Here, a novel physical model of the capacitance-voltage (C-V) electrical property changes under ambient moisture is proposed, based on the early appearance of abnormalities in the C-V measurements. The electrolysis of water caused by the tip electric field and electrical abnormalities caused by hydrogen diffusion into the a-InGaZnO active layer are explained by this model. Secondary-ion mass spectrometry analysis shows that hydrogen content in the channel generally increases under NBS in ambient moisture. The degradation behavior due to moisture in a-InGaZnO is clarified.
　　In the seventh part, this study introduces a cyclical annealing technique that enhances the reliability of a-InGaZnO via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long term annealing. With the use of cyclical annealing, the reliability of the a-InGaZnO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

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