本論文旨在利用微波電漿化學氣相沉積法探討以鐵鎳合金為催化金屬、於低溫下合成奈米碳管。於反應壓腔力為30torr、300~500°C之條件下，以40 Å厚度的鐵鎳合金為催化金屬裂解甲烷來合成奈米碳管，實際結果顯示，以10分鐘的氫電漿處理鐵鎳合金催化金屬，在300°C的溫度之下，並未獲得奈米顆粒可供奈米碳管成長。而在350°C~500°C的成長溫度下，無論在成長過程中是否有開啟電漿參與反應，皆發現有奈米碳管之成長。然因電漿亦將對基版產生加熱作用，故開啟電漿參與奈米碳管的成長，會造成成長溫度的上升。實驗結果發現利用玻璃基材作為基板，於350°C成長溫度下，若開啟電漿參與奈米碳管之成長將會造成玻璃基材的熔解；然若在成長過程中關閉電漿，在400°C之成長溫度下，玻璃基材並不會有熔解的現象。且開啟電漿時，由於有較多高能量的碳源參與反應，會造成奈米碳管會有較高的密度。另外我們將討論成長時間、催化金屬厚度、反應氣體與催化金屬種類對成長奈米碳管的影響，不同的成長條件所成長出的奈米碳管的形態與場發射特性也會有所不同，而從實驗中，我們將會發現可以選擇厚度較薄的催化金屬層，且可以加入有利於加強奈米碳管的結核作用、抑制碳源的聚合及防止或清除非晶碳的成分的氣體(在實驗中我們加入了氮氣)做為反應氣體，而催化金屬以鐵鎳比例為1時對於低溫成長奈米碳管會有較佳的表現。我們在以鐵鎳合金作為催化金屬、且在400°C的成長溫度下，以100sccm氫氣、20sccm的甲烷與40sccm的氮氣做為反應氣體成長奈米碳管，可以得到啟始電壓為1.48 V/μm 與電流密度為641μA/cm2 (@E=3.5 V/μm) 的奈米碳管。

In this work, low temperature growth of carbon nanotubes (CNTs) by microwave plasma vapor deposition method using Fe-Ni Alloy catalyst for field emission display applications is presented.
Employing methane (CH4) as the reactant gas, CNTs were synthesized at a temperature in the range of 300~500°C at 30 torr using 40Å-thick Fe-Ni catalyst. Experimental results show that it would be impossible to grow CNTs at or below 300°C, because there is no effective nano-particle could be formed at 300°C with hydrogen plasma pretreatment for 10 min. However, it is found that CNTs could be synthesized at the temperature range of 350-500°C keeping the other parameters unchanged.
To realize low temperature growth of nanotubes using plasma CVD method, plasma was intentionally switched off during the growth process and the growth of CNTs has been successfully achieved at a temperature as low as 350°C. It is noted that the CNTs grown at 350°C have good field emission property with a turn-on field of around 1.1V/μm. Effects of the deposition time, the type and thickness of the metal catalyst and the reaction gas, etc., on the CNTs and their field emission properties are investigated and discussed.

[1]MR Falvo, GJ Clary, RM Ⅱ Taylor, V Chi, FP Brooks, S Washburn,R Superfine, Nature 389(1997) 582
[2]M treacy, TW Ebesen , JM Gibson, Nature 381 (1996) 678
[3]C Journet, WK Master, P Bernier, A Loiseau, M Lamy de Chapelle, S Lefrent, P Deniard, R Lee, JE Fischer, Nature 388(1997) 756
[4]H Dai, A Rinzler, P Nikolaev, A Thess, DT Colbert, R E Smalley, Chemical Physics Letters 260(1996)471
[5] K. J. Chen, W. K. Hong, F. G. Tantair, C. B. Lin, K. H. Chen, L. C. Chen and H. C. Cheng,ECS. Lett. 4 (8) H15-H17, 2001.
[6] K.J. Chen, W.K.Hong, C.P.Lin; K.H. Chen; L.C. Chen; H.C. Cheng, IEEE Electron Device Letters , 22 (11) , 2001
[7]SJ Tans, MH Devoret, HJ Dai, A Thess, RE Smelley, LJ Geerligs, C Dekkey, Nature 386(1997)471
[8]V Inavov, JB Nagy, P Lambi, AA Lucas, XB Zhang, XF Zhang, D Bernaerts, Chemical Physics Letters 223(1994)329
[9]B Gan, J Ahn, Q Zhang. Rusli, SF Yoon, J Yu, QF Huang, K Chew, VA Ligatchev, XB Zhang, WZ Li, Chemical Physics Letters 333 (2001) 23-28
[10]CJ Lee, J Park, Applied Physics Letters 77(2000)3397-3399
[11]P Chen, X Wu, J Lin, H Li KL Tan, Carbon 38(2000)139-143
[12]Q Chen, L Dai, Appiled Physics Letters 76(19)(2000)2719
[13]Y Chen, DT Shaw, Appiled Physics Letters 77(2000)830
[14]ZF Ren, ZP Huang, DT Wang, JG Wen, JW Xu, JH Wang, LE Calvet, J Chen,JF Klemic, MA Reed, Applied Physics Letters 75 (1999) 1086
[15]Journal . Vacumm. Science. & Technology. B 18(2, p. 665, 2000)
[17]L. C. Chen et al, Adv. Funct. Mater. 2002,12, No. 10, October
[18]C Ducati, I Alexandru, Journal of Applied Physics 15 September 2002
[19]J Cermake, H Mehrer, Acta Metallurgica, Materialia 42(4)(1994) 1345