薄膜是利用各種沉積方法沉積於基板上，由於各種原因產生殘留應力，造成薄膜剝落。殘留應力對於樣品長期可靠度可視為一項重要的指標性，它對整個沉積過程中與表面完善有很重要關係。因此如何精確來評估殘留應力大小，對元件成品率將是重要依據。
本研究目標為總結薄膜應力的量測方法。介紹了測量基材曲率變形分析法和X光繞射法量測晶格變形等測量測薄膜應力及其測量原理。目前來說最常使用方法為非破壞性XRD來決定材料殘留應力及應變，且能夠提供較高準確度。
本文利用溶膠凝膠法製成AZO薄膜，經由各項光學、電性特性檢測，可以發現於濃度0.3M、0.5M於各方面表現顯示出薄膜其品質較為良好，而隨著濃度增高為0.75M、1.0M時，薄膜品質逐漸呈現各種缺陷情況，可能導致薄膜局部性破壞造成應力釋放，以致於量測殘留應力隨著濃度增高而降低。

There are several techniques to deposit thin films to the substrate: magnetron sputtering, pulsed laser deposition, sol-gel, metal organic chemical vapor deposition, etc. Residual stress has become an important issues related with thin film quality. The removal of residual stress related to deposition technique has an important relationship.
Different kinds of thin film stress measurements are summarized. The principle of thin film stress measurements are discussed, including the laser macroscopic deformation analysis based on measuring the bending curvature of substrate and the X-ray diffraction measurement based on crystal lattice deformation. The X-ray diffraction (XRD) method is a non-destructive method which can accurately measure the stress-strain relationship.
The sol-gel method was used to deposit the aluminum-zinc oxide (AZO) thin film in this experiment. This experiment also used AZO at various different concentration ranging from 0.3M, 0.5M, 0.75M, 1.0M. Various analysis were applied to AZO thin films to determine their mechanical, optical, and electrical properties. The AZO thin films with concentration 0.3M and 0.5M have better quality. Increasing concentration to 0.75M and 1.0M decreased the film quality because of the localized damage caused by stress release.

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