本論文針對氮化鎵/氮化鋁鎵系列的異質接面光電晶體以作為紫外光偵測器的相關研究與製作，包括成長單側與雙側異質接面光電晶體。
異質接面光電晶體結合光導體電荷中性的原理以及能帶不連續所造成的電洞累積現象，進而導致高內部增益，可以克服微小光訊號偵測的困難。因此，本論文首先於B-E 接面間成長異質結構，利用異質接面形成的能位障，堆積由B-C 接面所激發的電洞，而由外部電路補償元件注入額外之電子堆積於射極，進而改變BE V 的能位障高度而獲得電流增益。
緊接著將單側異質接面光電晶體中的B-C 接面改制為異質結構後，其光響應值下降為單側異質接面電晶體的一半。而在雙側異質接面元件中，由於射極與集極為寬能隙材料所組成，皆可作為光子入射的窗口層，因此將單側異質接面元件的結構倒置為集極向上的結構。而此結構的改變，除了使得元件在短波段的吸收效率更好之外，另一方面卻導致元件的光響應值對非主要吸收波段的鑑別度下降。且由於磊晶成長上的不易，因此更在雙側異質接面元件的B-C 接面中穿插一層高阻值的寬能隙材料，而高阻值材料的加入，使得光電晶體的光響應半高寬不隨著偏壓的改變而變化，因此為了維持較低的光響應半高寬值，穿插高阻值材料是可值得考慮。

This thesis aims at fabricating and characterizing of AlGaN-GaN hetero-junction photo-transistors(HPTs), which were used to detect the ultraviolet light. We have fabricated two kinds of HPTs, including single hetero-junction photo-transistors and double hetero-junction photo-transistors.
HPTs feature the neutral principle of charges in photoconductors with bending of band discontinuity to acquire high internal gains, which can produce adequate signal levels for the read-out optoelectronic devices. In
principle, the band discontinuity at the base-emitter
hetero-junction leads to an accumulation of photo-excited holes originating from the base-collector homo-junction. Thus electrons resulting from external circuit must enter the sample. And then, the excess injected electrons accumulate at Emitter. The free electrons and holes accumulated at the two sides of emitter continuity
change the band diagram of base-Emitter junction and acquire high internal gain. That is the external photocurrent is due to more than one electron flow
per absorbed photon.
In the double hetero-junction photo-transistors, the base-collector
homojuncion was replaced by heterostructure and the responsibility
decreased to a half of the single heterojunction photo-transistor. Because the
collector and emitter were composed of wide band materials in the double
hetero junction photo transistors, so either collector or emitter could be the
window layer for the incidence of light. In the double hetero-junction
photo-transistors, we chose collector to be the window layer allowing more
lights in short wavelength to be absorbed in the depletion layers.
Nevertheless, the rejection ratio of peak responsivity to short-wavelength
responsivity was declined . In addition, a high- resistance layer inserted in
the base-collector heterojunction could lead to a near constant band width of
spectral responsibility.

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