在本篇研究論文中，我們在半導體材料InSb上外加磁場，控制其於SIS (semiconductor-insulator-Semiconductor)結構中磁化表面電漿的特性。當外加磁場時，半導體內部的電子會因磁場的方向而進行迴旋運動(Cyclotron motion)，使表面電漿在SIS結構中產生非對稱的特性，故藉由外加不同方向、大小的磁場改變半導體材料的介電系數進而調控其表面電漿的波長、行進方向以及侷限表面電漿於上表面或是下表面。
由於上述磁場調控半導體的性質，我們設計一個位於THz波段的磁控聚焦點透鏡。此透鏡可以在不改變其結構與材料的情況下，藉由改變外加磁場的方向調控其表面電漿侷限的表面已達到調控聚焦點位置的效果。以及利用週期性光柵和調整外加磁場的大小來控制輻射角度，可應用於THz波段的雷達，並且能在只調控磁場的大小即可於空間中進行152o大範圍的掃瞄。
此論文我們將利用有限元素分析軟體COMSOL進行模組設計以及模擬解析，並藉由MATLAB進行理論計算證明其設計的正確性。

In this study, we design three kinds of grating on the semiconductor-insulator-semiconductor (SIS) substrate. One is a magnetic lens with chirped gratings on the substrate for surface magnetoplasmons to generate a convergent beam in terahertz region based on the phase matching condition and can be well manipulated by the external magnetic field. Another is a magnetic-manipulated radar for 1THz in SIS substrate with periodic gratings. We can manipulated the scanned area of the radar up to 152o by applied different intensity of external magnetic field. The other is a multi-frequency magnetic lens with periodic gratings on the SIS substrate to generate a convergent beam with 1THz, 2THz, and 3THz lights, we can switch on and off by manipulated the external magnetic field.

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